ZHCSPE1 February   2022 DLP3020-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  Storage Conditions
    3. 6.3  ESD Ratings
    4. 6.4  Recommended Operating Conditions
    5. 6.5  Thermal Information
    6. 6.6  Electrical Characteristics
    7. 6.7  Timing Requirements
    8. 6.8  Switching Characteristics
    9. 6.9  System Mounting Interface Loads
    10. 6.10 Physical Characteristics of the Micromirror Array
    11. 6.11 Micromirror Array Optical Characteristics
    12. 6.12 Window Characteristics
    13. 6.13 Chipset Component Usage Specification
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Micromirror Array
      2. 7.3.2 Double Data Rate (DDR) Interface
      3. 7.3.3 Micromirror Switching Control
      4. 7.3.4 DMD Voltage Supplies
      5. 7.3.5 Logic Reset
      6. 7.3.6 Temperature Sensing Diode
        1. 7.3.6.1 Temperature Sense Diode Theory
      7. 7.3.7 DMD JTAG Interface
    4. 7.4 System Optical Considerations
      1. 7.4.1 Numerical Aperture and Stray Light Control
      2. 7.4.2 Pupil Match
      3. 7.4.3 Illumination Overfill and Alignment
    5. 7.5 DMD Image Performance Specification
    6. 7.6 Micromirror Array Temperature Calculation
    7. 7.7 Micromirror Landed-On/Landed-Off Duty Cycle
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
    3. 8.3 Application Mission Profile Consideration
  9. 9 Power Supply Recommendations
    1. 9.1 Power Supply Sequencing Requirements
      1. 9.1.1 Power Up and Power Down
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Temperature Diode Pins
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
      2. 11.1.2 Device Markings
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Device Handling
    8. 11.8 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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7.3.6.1 Temperature Sense Diode Theory

A temperature sensing diode is based on the fundamental current and temperature characteristics of a transistor. The diode is formed by connecting the transistor base to the collector. Two different known currents flow through the diode and the resulting diode voltage is measured in each case. The difference in the base-emitter voltages is proportional to the absolute temperature of the transistor.

Refer to the TMP411-Q1 data sheet for detailed information about temperature diode theory and measurement. Figure 7-2 and Figure 7-3 illustrate the relationship between the current and voltage through the diode.

GUID-63A9CF6D-55C4-41B1-B396-661E9454B0A7-low.gifFigure 7-2 Temperature Measurement Theory
GUID-D48584A2-B202-48F2-886D-C0C53B92078A-low.gifFigure 7-3 Example of Delta VBE vs Temperature