ZHCSAK1D November   2012  – February 2018 CSD18532Q5B

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
    1.     俯视图
      1.      Device Images
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 接收文档更新通知
    2. 6.2 社区资源
    3. 6.3 商标
    4. 6.4 静电放电警告
    5. 6.5 Glossary
  7. 7机械、封装和可订购信息
    1. 7.1 Q5B 封装尺寸
    2. 7.2 建议 PCB 布局
    3. 7.3 建议模板布局
    4. 7.4 Q5B 卷带信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DNK|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

Typical MOSFET Characteristics

TA = 25°C unless otherwise stated
CSD18532Q5B graph01_SLPS322A.png
Figure 1. Transient Thermal Impedance
CSD18532Q5B graph02_SLPS322.png
Figure 2. Saturation Characteristics
CSD18532Q5B graph04_SLPS322.png
Figure 4. Gate Charge
CSD18532Q5B graph06_SLPS322.png
Figure 6. Threshold Voltage vs Temperature
CSD18532Q5B graph08p2_SLPS322.png
Figure 8. Normalized On-State Resistance vs Temperature
CSD18532Q5B graph10p2_SLPS322A.png
Figure 10. Maximum Safe Operating Area
CSD18532Q5B graph12_SLPS322.png
Figure 12. Maximum Drain Current vs Temperature
CSD18532Q5B graph03_SLPS322.png
Figure 3. Transfer Characteristics
CSD18532Q5B D005_SLPS322.gif
Figure 5. Capacitance
CSD18532Q5B graph07_SLPS322.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD18532Q5B graph09_SLPS322.png
Figure 9. Typical Diode Forward Voltage
CSD18532Q5B graph11_SLPS322.png
Figure 11. Single Pulse Unclamped Inductive Switching