ZHCSEW3C April   2016  – February 2022 CSD17382F4

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 支持资源
    2. 6.2 Receiving Notification of Documentation Updates
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 术语表
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 CSD17382F4 Embossed Carrier Tape Dimensions

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YJC|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

4 Revision History

Changes from Revision B (October 2021) to Revision C (February 2022)

  • 将超薄型封装要点中的厚度从 0.35mm 更改为 0.36mmGo
  • 将超薄型封装图片中的厚度从 0.35mm 更新为 0.36mmGo
  • Changed ultra-low profile image height from 0.35 mm to 0.36 mm.Go
  • Added FemtoFET Surface Mount Guide note.Go

Changes from Revision A (December 2016) to Revision B (October 2021)

  • 更新了整个文档中的表格、图和交叉参考的编号格式Go

Changes from Revision * (April 2016) to Revision A (December 2016)

  • Changed the TEST CONDITIONS for gfsTransconductance From: VDS = 15 V To: VDS = 3 V in the Section 5.1 section. Go
  • Added Section 6.2 in the Section 6 section. Go
  • Updated all mechanical drawings. Go