ZHCSVL4E October 2009 – November 2024 CSD16301Q2
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-source voltage | VGS = 0V, ID = 250μA | 25 | V | |||
| IDSS | Drain-to-source leakage current | VGS = 0V, VDS = 20V | 1 | μA | |||
| IGSS | Gate-to-source leakage current | VDS = 0V, VGS = +10/–8V | 100 | nA | |||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, IDS = 250μA | 0.9 | 1.1 | 1.55 | V | |
| RDS(on) | Drain-to-source on resistance | VGS = 3V, IDS = 4A | 27 | 34 | mΩ | ||
| VGS = 4.5V, IDS = 4A | 23 | 29 | |||||
| VGS = 8V, IDS = 4A | 19 | 24 | |||||
| gfs | Transconductance | VDS = 15V, IDS = 4A | 16.5 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| CISS | Input capacitance | VGS = 0V, VDS = 12.5V, ƒ = 1MHz | 260 | 340 | pF | ||
| COSS | Output capacitance | 165 | 215 | pF | |||
| CRSS | Reverse transfer capacitance | 13 | 17 | pF | |||
| Rg | Series gate resistance | 1.3 | 2.6 | Ω | |||
| Qg | Gate charge total (4.5 V) | VDS = 10V, IDS = 4A | 2.0 | 2.8 | nC | ||
| Qgd | Gate charge gate-to-drain | 0.4 | nC | ||||
| Qgs | Gate charge gate-to-source | 0.6 | nC | ||||
| Qg(th) | Gate charge at Vth | 0.3 | nC | ||||
| QOSS | Output charge | VDS = 12.5V, VGS = 0V | 3.0 | nC | |||
| td(on) | Turnon delay time | VDS =
12.5V, VGS = 4.5V, IDS = 4A RG = 2Ω | 2.7 | ns | |||
| tr | Rise time | 4.4 | ns | ||||
| td(off) | Turnoff delay time | 4.1 | ns | ||||
| tf | Fall time | 1.7 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode forward voltage | IDS = 4A, VGS = 0V | 0.8 | 1 | V | ||
| Qrr | Reverse recovery charge | VDD = 12.5V, IF = 4A, di/dt = 200A/μs | 5.1 | nC | |||
| trr | Reverse recovery time | 11 | ns | ||||