ZHCSVL4E October   2009  – November 2024 CSD16301Q2

PRODUCTION DATA  

  1.   1
  2. 1特性
  3. 2应用
  4. 3说明
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 接收文档更新通知
    2. 5.2 支持资源
    3. 5.3 Trademarks
    4. 5.4 静电放电警告
    5. 5.5 术语表
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DQK|6
散热焊盘机械数据 (封装 | 引脚)
订购信息

4.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise specified)

CSD16301Q2 Transient Thermal Impedance
Figure 4-1 Transient Thermal Impedance
CSD16301Q2 Saturation Characteristics
Figure 4-2 Saturation Characteristics
CSD16301Q2 Gate Charge
ID = 4AVDS = 50V
Figure 4-4 Gate Charge
CSD16301Q2 Threshold Voltage vs Temperature
ID = 250µA
Figure 4-6 Threshold Voltage vs Temperature
CSD16301Q2 Normalized On-State Resistance vs Temperature
VGS = 4.5VID = 4A
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD16301Q2 Maximum Safe Operating Area
Single pulse, max RθJC = 8.4°C/W
Figure 4-10 Maximum Safe Operating Area
CSD16301Q2 Maximum Drain Current vs Temperature
Figure 4-12 Maximum Drain Current vs Temperature
CSD16301Q2 Transfer Characteristics
VDS = 5V
Figure 4-3 Transfer Characteristics
CSD16301Q2 Capacitance
Figure 4-5 Capacitance
CSD16301Q2 On-State Resistance vs Gate-to-Source Voltage
Figure 4-7 On-State Resistance vs Gate-to-Source Voltage
CSD16301Q2 Typical Diode Forward Voltage
Figure 4-9 Typical Diode Forward Voltage
CSD16301Q2 Single Pulse Unclamped Inductive Switching
Figure 4-11 Single Pulse Unclamped Inductive Switching