ZHCSBM6A September   2013  – January 2018 CSD13202Q2

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
    1.     Device Images
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Characteristics
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 商标
    4. 6.4 静电放电警告
    5. 6.5 Glossary
  7. 7机械、封装和可订购信息
    1. 7.1 Q2 封装尺寸
      1. 7.1.1 建议 PCB 布局
      2. 7.1.2 推荐的模版布局
    2. 7.2 Q2 卷带信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DQK|6
散热焊盘机械数据 (封装 | 引脚)
订购信息

Typical MOSFET Characteristics

TA = 25°C unless otherwise stated
CSD13202Q2 graph01p2_SLPS313.png
Figure 1. Transient Thermal Impedance
CSD13202Q2 graph02_SLPS313.png
Figure 2. Saturation Characteristics
CSD13202Q2 graph04p2_SLPS313.png
Figure 4. Gate Charge
CSD13202Q2 graph06_SLPS313.png
Figure 6. Threshold Voltage vs Temperature
CSD13202Q2 graph08_SLPS313.png
Figure 8. Normalized On-State Resistance vs Temperature
CSD13202Q2 graph10_SLPS313.png
Figure 10. Maximum Safe Operating Area
CSD13202Q2 graph12_SLPS313.png
Figure 12. Maximum Drain Current vs Temperature
CSD13202Q2 graph03_SLPS313.png
Figure 3. Transfer Characteristics
CSD13202Q2 graph05_SLPS313.png
Figure 5. Capacitance
CSD13202Q2 graph07_SLPS313.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD13202Q2 graph09_SLPS313.png
Figure 9. Typical Diode Forward Voltage
CSD13202Q2 graph11_SLPS313.png
Figure 11. Single Pulse Unclamped Inductive Switching