ZHCSSJ3A december   2022  – june 2023 CC1354P10

ADVANCE INFORMATION  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Functional Block Diagram
  6. 5 Revision History
  7. 6 Device Comparison
  8. 7 Terminal Configuration and Functions
    1. 7.1 Pin Diagram – RGZ Package (Top View)
    2. 7.2 Signal Descriptions – RGZ Package
    3. 7.3 Connections for Unused Pins and Modules – RGZ Package
    4. 7.4 Pin Diagram – RSK Package (Top View)
    5. 7.5 Signal Descriptions – RSK Package
    6. 7.6 Connection of Unused Pins and Module – RSK Package
  9. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Supply and Modules
    5. 8.5  Power Consumption - Power Modes
    6. 8.6  Power Consumption - Radio Modes
    7. 8.7  Nonvolatile (Flash) Memory Characteristics
    8. 8.8  Thermal Resistance Characteristics
    9. 8.9  RF Frequency Bands
    10. 8.10 861 MHz to 1054 MHz - Receive (RX)
    11. 8.11 861 MHz to 1054 MHz - Transmit (TX) 
    12. 8.12 861 MHz to 1054 MHz - PLL Phase Noise Wideband Mode
    13. 8.13 861 MHz to 1054 MHz - PLL Phase Noise Narrowband Mode
    14. 8.14 Bluetooth Low Energy - Receive (RX)
    15. 8.15 Bluetooth Low Energy - Transmit (TX)
    16. 8.16 Zigbee and Thread - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - RX
    17. 8.17 Zigbee and Thread - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - TX
    18. 8.18 Timing and Switching Characteristics
      1. 8.18.1 Reset Timing
      2. 8.18.2 Wakeup Timing
      3. 8.18.3 Clock Specifications
        1. 8.18.3.1 48 MHz Clock Input (TCXO)
        2. 8.18.3.2 48 MHz Crystal Oscillator (XOSC_HF)
        3. 8.18.3.3 48 MHz RC Oscillator (RCOSC_HF)
        4. 8.18.3.4 2 MHz RC Oscillator (RCOSC_MF)
        5. 8.18.3.5 32.768 kHz Crystal Oscillator (XOSC_LF)
        6. 8.18.3.6 32 kHz RC Oscillator (RCOSC_LF)
      4. 8.18.4 Serial Peripheral Interface (SPI) Characteristics
        1. 8.18.4.1 SPI Characteristics
        2. 8.18.4.2 SPI Master Mode
        3. 8.18.4.3 SPI Master Mode Timing Diagrams
        4. 8.18.4.4 SPI Slave Mode
        5. 8.18.4.5 SPI Slave Mode Timing Diagrams
      5. 8.18.5 UART
        1. 8.18.5.1 UART Characteristics
    19. 8.19 Peripheral Characteristics
      1. 8.19.1 ADC
        1. 8.19.1.1 Analog-to-Digital Converter (ADC) Characteristics
      2. 8.19.2 DAC
        1. 8.19.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 8.19.3 Temperature and Battery Monitor
        1. 8.19.3.1 Temperature Sensor
        2. 8.19.3.2 Battery Monitor
      4. 8.19.4 Comparators
        1. 8.19.4.1 Low-Power Clocked Comparator
        2. 8.19.4.2 Continuous Time Comparator
      5. 8.19.5 Current Source
        1. 8.19.5.1 Programmable Current Source
      6. 8.19.6 GPIO
        1. 8.19.6.1 GPIO DC Characteristics
    20. 8.20 Typical Characteristics
      1. 8.20.1 MCU Current
      2. 8.20.2 RX Current
      3. 8.20.3 TX Current
      4. 8.20.4 RX Performance
      5. 8.20.5 TX Performance
      6. 8.20.6 ADC Performance
  10. 9 Detailed Description
    1. 9.1  Overview
    2. 9.2  System CPU
    3. 9.3  Radio (RF Core)
      1. 9.3.1 Proprietary Radio Formats
      2. 9.3.2 Bluetooth 5.3 Low Energy
      3. 9.3.3 802.15.4 Thread, Zigbee, and 6LoWPAN
    4. 9.4  Memory
    5. 9.5  Sensor Controller
    6. 9.6  Cryptography
    7. 9.7  Timers
    8. 9.8  Serial Peripherals and I/O
    9. 9.9  Battery and Temperature Monitor
    10. 9.10 µDMA
    11. 9.11 Debug
    12. 9.12 Power Management
    13. 9.13 Clock Systems
    14. 9.14 Network Processor
  11. 10Application, Implementation, and Layout
    1. 10.1 Reference Designs
  12. 11Device and Documentation Support
    1. 11.1 Tools and Software
      1. 11.1.1 SimpleLink™ Microcontroller Platform
    2. 11.2 Documentation Support
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Packaging Information

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8.18.3.2 48 MHz Crystal Oscillator (XOSC_HF)

Measured on a Texas Instruments reference design with Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted.(1)
PARAMETER MIN TYP MAX UNIT
Crystal frequency 48 MHz
ESR Equivalent series resistance
6 pF < CL ≤ 9 pF		 20 60 Ω
ESR Equivalent series resistance
5 pF < CL ≤  6 pF		 80 Ω
LM Motional inductance, relates to the load capacitance that is used for the crystal (CL in Farads)(5) < 3 × 10–25 / CL2 H
CL Crystal load capacitance(4) 5 7(3) 9 pF
Start-up time(2) 200 µs
(1) Probing or otherwise stopping the crystal while the DC/DC converter is enabled may cause permanent damage to the device.
(2) Start-up time using the TI-provided power driver. Start-up time may increase if driver is not used.
(3) On-chip default connected capacitance including reference design parasitic capacitance. Connected internal capacitance is changed through software in the Customer Configuration section (CCFG).
(4) Adjustable load capacitance is integrated into the device. External load capacitors are required for systems targeting compliance with certain regulations. See the device errata for further details.
(5) The crystal manufacturer's specification must satisfy this requirement for proper operation.