ZHCSSJ3A december   2022  – june 2023 CC1354P10

ADVANCE INFORMATION  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Functional Block Diagram
  6. Revision History
  7. Device Comparison
  8. Terminal Configuration and Functions
    1. 7.1 Pin Diagram – RGZ Package (Top View)
    2. 7.2 Signal Descriptions – RGZ Package
    3. 7.3 Connections for Unused Pins and Modules – RGZ Package
    4. 7.4 Pin Diagram – RSK Package (Top View)
    5. 7.5 Signal Descriptions – RSK Package
    6. 7.6 Connection of Unused Pins and Module – RSK Package
  9. Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Supply and Modules
    5. 8.5  Power Consumption - Power Modes
    6. 8.6  Power Consumption - Radio Modes
    7. 8.7  Nonvolatile (Flash) Memory Characteristics
    8. 8.8  Thermal Resistance Characteristics
    9. 8.9  RF Frequency Bands
    10. 8.10 861 MHz to 1054 MHz - Receive (RX)
    11. 8.11 861 MHz to 1054 MHz - Transmit (TX) 
    12. 8.12 861 MHz to 1054 MHz - PLL Phase Noise Wideband Mode
    13. 8.13 861 MHz to 1054 MHz - PLL Phase Noise Narrowband Mode
    14. 8.14 Bluetooth Low Energy - Receive (RX)
    15. 8.15 Bluetooth Low Energy - Transmit (TX)
    16. 8.16 Zigbee and Thread - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - RX
    17. 8.17 Zigbee and Thread - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - TX
    18. 8.18 Timing and Switching Characteristics
      1. 8.18.1 Reset Timing
      2. 8.18.2 Wakeup Timing
      3. 8.18.3 Clock Specifications
        1. 8.18.3.1 48 MHz Clock Input (TCXO)
        2. 8.18.3.2 48 MHz Crystal Oscillator (XOSC_HF)
        3. 8.18.3.3 48 MHz RC Oscillator (RCOSC_HF)
        4. 8.18.3.4 2 MHz RC Oscillator (RCOSC_MF)
        5. 8.18.3.5 32.768 kHz Crystal Oscillator (XOSC_LF)
        6. 8.18.3.6 32 kHz RC Oscillator (RCOSC_LF)
      4. 8.18.4 Serial Peripheral Interface (SPI) Characteristics
        1. 8.18.4.1 SPI Characteristics
        2. 8.18.4.2 SPI Master Mode
        3. 8.18.4.3 SPI Master Mode Timing Diagrams
        4. 8.18.4.4 SPI Slave Mode
        5. 8.18.4.5 SPI Slave Mode Timing Diagrams
      5. 8.18.5 UART
        1. 8.18.5.1 UART Characteristics
    19. 8.19 Peripheral Characteristics
      1. 8.19.1 ADC
        1. 8.19.1.1 Analog-to-Digital Converter (ADC) Characteristics
      2. 8.19.2 DAC
        1. 8.19.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 8.19.3 Temperature and Battery Monitor
        1. 8.19.3.1 Temperature Sensor
        2. 8.19.3.2 Battery Monitor
      4. 8.19.4 Comparators
        1. 8.19.4.1 Low-Power Clocked Comparator
        2. 8.19.4.2 Continuous Time Comparator
      5. 8.19.5 Current Source
        1. 8.19.5.1 Programmable Current Source
      6. 8.19.6 GPIO
        1. 8.19.6.1 GPIO DC Characteristics
    20. 8.20 Typical Characteristics
      1. 8.20.1 MCU Current
      2. 8.20.2 RX Current
      3. 8.20.3 TX Current
      4. 8.20.4 RX Performance
      5. 8.20.5 TX Performance
      6. 8.20.6 ADC Performance
  10. Detailed Description
    1. 9.1  Overview
    2. 9.2  System CPU
    3. 9.3  Radio (RF Core)
      1. 9.3.1 Proprietary Radio Formats
      2. 9.3.2 Bluetooth 5.3 Low Energy
      3. 9.3.3 802.15.4 Thread, Zigbee, and 6LoWPAN
    4. 9.4  Memory
    5. 9.5  Sensor Controller
    6. 9.6  Cryptography
    7. 9.7  Timers
    8. 9.8  Serial Peripherals and I/O
    9. 9.9  Battery and Temperature Monitor
    10. 9.10 µDMA
    11. 9.11 Debug
    12. 9.12 Power Management
    13. 9.13 Clock Systems
    14. 9.14 Network Processor
  11. 10Application, Implementation, and Layout
    1. 10.1 Reference Designs
  12. 11Device and Documentation Support
    1. 11.1 Tools and Software
      1. 11.1.1 SimpleLink™ Microcontroller Platform
    2. 11.2 Documentation Support
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Packaging Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

861 MHz to 1054 MHz - Transmit (TX) 

Measured on the LP-EM-CC1354P10-1 reference design with Tc = 25°C, VDDS = 3.6 V with
DC/DC enabled and high power PA connected to VDDS unless otherwise noted.
All measurements are performed at the antenna input with a combined RX and TX path, except for high power PA which is measured at a dedicated antenna connection.
All measurements are performed conducted. (1)
 
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
General parameters
Max output power, boost mode Sub-1 GHz PA(2) VDDR = 1.95 V
Minimum supply voltage (VDDS ) for boost mode is 2.1 V
868 MHz and 915 MHz
14 dBm
Max output power, Sub-1 GHz PA(2) 868 MHz and 915 MHz 12 dBm
Max output power, High power PA 915 MHz
VDDS = 3.3V
20 dBm
Output power programmable  range Sub-1 GHz PA 868 MHz and 915 MHz, 1dB step size. 34 dB
Output power programmable range High power PA 868 MHz and 915 MHz
VDDS = 3.3V
6 dB
Output power variation over temperature
Sub-1 GHz PA
+10 dBm setting
Over recommended temperature operating range
±2 dB
Output power variation over temperature Boost mode, Sub-1 GHz PA +14 dBm setting
Over recommended temperature operating range
±1.5 dB
Spurious emissions and harmonics
Spurious emissions (excluding harmonics)
Sub-1 GHz PA, 868 MHz
(3)
30 MHz to 1 GHz +14 dBm setting
ETSI restricted bands
< -54 dBm
+14 dBm setting
ETSI outside restricted bands
< -36 dBm
1 GHz to 12.75 GHz
(outside ETSI restricted bands)
+14 dBm setting
measured in 1 MHz bandwidth (ETSI)
< -30 dBm
Spurious emissions out-of-band
Sub-1 GHz PA, 915 MHz
(3)
30 MHz to 88 MHz
(within FCC restricted bands)
+14 dBm setting < -56 dBm
88 MHz to 216 MHz
(within FCC restricted bands)
+14 dBm setting < -52 dBm
216 MHz to 960 MHz
(within FCC restricted bands)
+14 dBm setting < -50 dBm
960 MHz to 2390 MHz and above 2483.5 MHz (within FCC restricted band) +14 dBm setting <-42 dBm
1 GHz to 12.75 GHz
(outside FCC restricted bands)
+14 dBm setting < -40 dBm
Spurious emissions out-of-band High power PA, 915 MHz(3)(4) 30 MHz to 88 MHz
(within FCC restricted bands)
+20 dBm setting, VDDS = 3.3 V < -55 dBm
88 MHz to 216 MHz
(within FCC restricted bands)
+20 dBm setting, VDDS = 3.3 V < -52 dBm
216 MHz to 960 MHz
(within FCC restricted bands)
+20 dBm setting, VDDS = 3.3 V < -49 dBm
960 MHz to 2390 MHz and above 2483.5 MHz (within FCC restricted band) +20 dBm setting, VDDS = 3.3 V < -41 dBm
1 GHz to 12.75 GHz
(outside FCC restricted bands)
+20 dBm setting, VDDS = 3.3 V < -20 dBm
Spurious emissions out-of-band
Sub-1 GHz PA, 920.6/928 MHz
(3)
Below 710 MHz
(ARIB T-108)
+14 dBm setting < -36 dBm
710 MHz to 900 MHz
(ARIB T-108)
+14 dBm setting < -55 dBm
900 MHz to 915 MHz
(ARIB T-108)
+14 dBm setting < -55 dBm
930 MHz to 1000 MHz
(ARIB T-108)
+14 dBm setting < -55 dBm
1000 MHz to 1215 MHz
(ARIB T-108)
+14 dBm setting < -45 dBm
Above 1215 MHz
(ARIB T-108)
+14 dBm setting < -30 dBm
Harmonics
Sub-1 GHz PA
Second harmonic +14 dBm setting, 868 MHz < -30 dBm
+14 dBm setting, 915 MHz < -30
Third harmonic +14 dBm setting, 868 MHz < -30 dBm
+14 dBm setting, 915 MHz < -42
Fourth harmonic +14 dBm setting, 868 MHz < -30 dBm
+14 dBm setting, 915 MHz < -30
Fifth harmonic +14 dBm setting, 868 MHz < -30 dBm
+14 dBm setting, 915 MHz < -42
Harmonics
High power PA
Second harmonic +20 dBm setting, VDDS = 3.3 V, 915 MHz < -30 dBm
Third harmonic +20 dBm setting, VDDS = 3.3 V, 915 MHz < -42 dBm
Fourth harmonic +20 dBm setting, VDDS = 3.3 V, 915 MHz < -30 dBm
Fifth harmonic +20 dBm setting, VDDS = 3.3 V, 915 MHz < -42 dBm
Some combinations of frequency, data rate and modulation format requires use of external crystal load capacitors for regulatory compliance. More details can be found in the device errata.
Output power is dependent on RF match. For dual-band devices in the CC13X4 platform, output power might be slightly reduced depending on RF layout trade-offs.
Suitable for systems targeting compliance with EN 300 220, EN 303 131, EN 303 204, FCC CFR47 Part 15, ARIB STD-T108.
Spurious emissions increase for supply voltages below 2.2 V. As such, care must be taken to ensure regulatory requirements are met when operating at low supply voltage levels. An alternative is to use the Sub-1 GHz PA below 2.2 V.