ZHCSHI1H january   2018  – november 2020 CC1312R

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Functional Block Diagram
  5. 5 Revision History
  6. 6 Device Comparison
  7. 7 Terminal Configuration and Functions
    1. 7.1 Pin Diagram – RGZ Package (Top View)
    2. 7.2 Signal Descriptions – RGZ Package
    3. 7.3 Connections for Unused Pins and Modules
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Supply and Modules
    5. 8.5  Power Consumption - Power Modes
    6. 8.6  Power Consumption - Radio Modes
    7. 8.7  Nonvolatile (Flash) Memory Characteristics
    8. 8.8  Thermal Resistance Characteristics
    9. 8.9  RF Frequency Bands
    10. 8.10 861 MHz to 1054 MHz - Receive (RX)
    11. 8.11 861 MHz to 1054 MHz - Transmit (TX) 
    12. 8.12 861 MHz to 1054 MHz - PLL Phase Noise Wideband Mode
    13. 8.13 861 MHz to 1054 MHz - PLL Phase Noise Narrowband Mode
    14. 8.14 359 MHz to 527 MHz - Receive (RX)
    15. 8.15 359 MHz to 527 MHz - Transmit (TX) 
    16. 8.16 359 MHz to 527 MHz - PLL Phase Noise
    17. 8.17 143 MHz to 176 MHz - Receive (RX)
    18. 8.18 143 MHz to 176 MHz  - Transmit (TX) 
    19. 8.19 143 MHz to 176 MHz - PLL Phase Noise
    20. 8.20 Timing and Switching Characteristics
      1. 8.20.1 Reset Timing
      2. 8.20.2 Wakeup Timing
      3. 8.20.3 Clock Specifications
        1. 8.20.3.1 48 MHz Clock Input (TCXO)
        2. 8.20.3.2 48 MHz Crystal Oscillator (XOSC_HF)
        3. 8.20.3.3 48 MHz RC Oscillator (RCOSC_HF)
        4. 8.20.3.4 2 MHz RC Oscillator (RCOSC_MF)
        5. 8.20.3.5 32.768 kHz Crystal Oscillator (XOSC_LF)
        6. 8.20.3.6 32 kHz RC Oscillator (RCOSC_LF)
      4. 8.20.4 Synchronous Serial Interface (SSI) Characteristics
        1. 8.20.4.1 Synchronous Serial Interface (SSI) Characteristics
        2.       43
      5. 8.20.5 UART
        1. 8.20.5.1 UART Characteristics
    21. 8.21 Peripheral Characteristics
      1. 8.21.1 ADC
        1. 8.21.1.1 Analog-to-Digital Converter (ADC) Characteristics
      2. 8.21.2 DAC
        1. 8.21.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 8.21.3 Temperature and Battery Monitor
        1. 8.21.3.1 Temperature Sensor
        2. 8.21.3.2 Battery Monitor
      4. 8.21.4 Comparators
        1. 8.21.4.1 Low-Power Clocked Comparator
        2. 8.21.4.2 Continuous Time Comparator
      5. 8.21.5 Current Source
        1. 8.21.5.1 Programmable Current Source
      6. 8.21.6 GPIO
        1. 8.21.6.1 GPIO DC Characteristics
    22. 8.22 Typical Characteristics
      1. 8.22.1 MCU Current
      2. 8.22.2 RX Current
      3. 8.22.3 TX Current
      4. 8.22.4 RX Performance
      5. 8.22.5 TX Performance
      6. 8.22.6 ADC Performance
  9. 9 Detailed Description
    1. 9.1  Overview
    2. 9.2  System CPU
    3. 9.3  Radio (RF Core)
      1. 9.3.1 Proprietary Radio Formats
    4. 9.4  Memory
    5. 9.5  Sensor Controller
    6. 9.6  Cryptography
    7. 9.7  Timers
    8. 9.8  Serial Peripherals and I/O
    9. 9.9  Battery and Temperature Monitor
    10. 9.10 µDMA
    11. 9.11 Debug
    12. 9.12 Power Management
    13. 9.13 Clock Systems
    14. 9.14 Network Processor
  10. 10Application, Implementation, and Layout
    1. 10.1 Reference Designs
    2. 10.2 Junction Temperature Calculation
  11. 11Device and Documentation Support
    1. 11.1 Tools and Software
      1. 11.1.1 SimpleLink™ Microcontroller Platform
    2. 11.2 Documentation Support
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Packaging Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGZ|48
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.11 861 MHz to 1054 MHz - Transmit (TX) 

When measured on the CC1312REM-XD7793 reference design with Tc = 25 °C, VDDS = 3.0 V with
DC/DC enabled unless otherwise noted. All measurements are performed at the antenna input with a combined RX and TX path. All measurements are performed conducted. (1)
 
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
General parameters
Max output power, boost mode VDDR = 1.95 V
Minimum supply voltage (VDDS ) for boost mode is 2.1 V
868 MHz and 915 MHz		 14 dBm
Max output power 868 MHz and 915 MHz 12 dBm
Output power programmable range 868 MHz and 915 MHz 24 dB
Output power variation over temperature +10 dBm setting
Over recommended temperature operating range		 ±2 dB
Output power variation over temperature
Boost mode 		+14 dBm setting
Over recommended temperature operating range		 ±1.5 dB
Spurious emissions and harmonics
Spurious emissions (excluding harmonics) (2) 30 MHz to 1 GHz +14 dBm setting
ETSI restricted bands		 < -54 dBm
+14 dBm setting
ETSI outside restricted bands		 < -36 dBm
1 GHz to 12.75 GHz
(outside ETSI restricted bands)		 +14 dBm setting
measured in 1 MHz bandwidth (ETSI)		 < -30 dBm
Adjacent Channel Power  9.6 kbps, ±2.4 kHz deviation, 2-GFSK, 20 kHz channel spacing. Narrowband mode. Adjacent channel (ETSI EN 300 220 requirement). TxPower = 12.5 dBm. 868 MHz -24
dBm
Alternate Channel Power  9.6 kbps, ±2.4 kHz deviation, 2-GFSK, 20 kHz channel spacing. Narrowband mode. Alternate channel (ETSI EN 300 220 requirement). TxPower = 12.5 dBm. 868 MHz -31
dBm
Spurious emissions out-of-band, 915 MHz (2) 30 MHz to 88 MHz
(within FCC restricted bands)		 +14 dBm setting < -56 dBm
88 MHz to 216 MHz
(within FCC restricted bands)		 +14 dBm setting < -52 dBm
216 MHz to 960 MHz
(within FCC restricted bands)		 +14 dBm setting < -50 dBm
960 MHz to 2390 MHz and above 2483.5 MHz (within FCC restricted band) +14 dBm setting <-42 dBm
1 GHz to 12.75 GHz
(outside FCC restricted bands)		 +14 dBm setting < -40 dBm
Spurious emissions out-of-band, 920.6/928 MHz (2) Below 710 MHz
(ARIB T-108)		 +14 dBm setting < -36 dBm
710 MHz to 900 MHz
(ARIB T-108)		 +14 dBm setting < -55 dBm
900 MHz to 915 MHz
(ARIB T-108)		 +14 dBm setting < -55 dBm
930 MHz to 1000 MHz
(ARIB T-108)		 +14 dBm setting < -55 dBm
1000 MHz to 1215 MHz
(ARIB T-108)		 +14 dBm setting < -45 dBm
Above 1215 MHz
(ARIB T-108)		 +14 dBm setting < -30 dBm
Harmonics Second harmonic +14 dBm setting, 868 MHz < -30 dBm
+14 dBm setting, 915 MHz < -30
Third harmonic +14 dBm setting, 868 MHz < -30 dBm
+14 dBm setting, 915 MHz < -42
Fourth harmonic +14 dBm setting, 868 MHz < -30 dBm
+14 dBm setting, 915 MHz < -30
Fifth harmonic +14 dBm setting, 868 MHz < -30 dBm
+14 dBm setting, 915 MHz < -42
(1) Some combinations of frequency, data rate and modulation format requires use of external crystal load capacitors for regulatory compliance. More details can be found in the device errata.
(2) Suitable for systems targeting compliance with EN 300 220, EN 303 131, EN 303 204, FCC CFR47 Part 15, ARIB STD-T108.