ZHCSHI1H january   2018  – november 2020 CC1312R

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Functional Block Diagram
  5. Revision History
  6. Device Comparison
  7. Terminal Configuration and Functions
    1. 7.1 Pin Diagram – RGZ Package (Top View)
    2. 7.2 Signal Descriptions – RGZ Package
    3. 7.3 Connections for Unused Pins and Modules
  8. Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Supply and Modules
    5. 8.5  Power Consumption - Power Modes
    6. 8.6  Power Consumption - Radio Modes
    7. 8.7  Nonvolatile (Flash) Memory Characteristics
    8. 8.8  Thermal Resistance Characteristics
    9. 8.9  RF Frequency Bands
    10. 8.10 861 MHz to 1054 MHz - Receive (RX)
    11. 8.11 861 MHz to 1054 MHz - Transmit (TX) 
    12. 8.12 861 MHz to 1054 MHz - PLL Phase Noise Wideband Mode
    13. 8.13 861 MHz to 1054 MHz - PLL Phase Noise Narrowband Mode
    14. 8.14 359 MHz to 527 MHz - Receive (RX)
    15. 8.15 359 MHz to 527 MHz - Transmit (TX) 
    16. 8.16 359 MHz to 527 MHz - PLL Phase Noise
    17. 8.17 143 MHz to 176 MHz - Receive (RX)
    18. 8.18 143 MHz to 176 MHz  - Transmit (TX) 
    19. 8.19 143 MHz to 176 MHz - PLL Phase Noise
    20. 8.20 Timing and Switching Characteristics
      1. 8.20.1 Reset Timing
      2. 8.20.2 Wakeup Timing
      3. 8.20.3 Clock Specifications
        1. 8.20.3.1 48 MHz Clock Input (TCXO)
        2. 8.20.3.2 48 MHz Crystal Oscillator (XOSC_HF)
        3. 8.20.3.3 48 MHz RC Oscillator (RCOSC_HF)
        4. 8.20.3.4 2 MHz RC Oscillator (RCOSC_MF)
        5. 8.20.3.5 32.768 kHz Crystal Oscillator (XOSC_LF)
        6. 8.20.3.6 32 kHz RC Oscillator (RCOSC_LF)
      4. 8.20.4 Synchronous Serial Interface (SSI) Characteristics
        1. 8.20.4.1 Synchronous Serial Interface (SSI) Characteristics
        2.       43
      5. 8.20.5 UART
        1. 8.20.5.1 UART Characteristics
    21. 8.21 Peripheral Characteristics
      1. 8.21.1 ADC
        1. 8.21.1.1 Analog-to-Digital Converter (ADC) Characteristics
      2. 8.21.2 DAC
        1. 8.21.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 8.21.3 Temperature and Battery Monitor
        1. 8.21.3.1 Temperature Sensor
        2. 8.21.3.2 Battery Monitor
      4. 8.21.4 Comparators
        1. 8.21.4.1 Low-Power Clocked Comparator
        2. 8.21.4.2 Continuous Time Comparator
      5. 8.21.5 Current Source
        1. 8.21.5.1 Programmable Current Source
      6. 8.21.6 GPIO
        1. 8.21.6.1 GPIO DC Characteristics
    22. 8.22 Typical Characteristics
      1. 8.22.1 MCU Current
      2. 8.22.2 RX Current
      3. 8.22.3 TX Current
      4. 8.22.4 RX Performance
      5. 8.22.5 TX Performance
      6. 8.22.6 ADC Performance
  9. Detailed Description
    1. 9.1  Overview
    2. 9.2  System CPU
    3. 9.3  Radio (RF Core)
      1. 9.3.1 Proprietary Radio Formats
    4. 9.4  Memory
    5. 9.5  Sensor Controller
    6. 9.6  Cryptography
    7. 9.7  Timers
    8. 9.8  Serial Peripherals and I/O
    9. 9.9  Battery and Temperature Monitor
    10. 9.10 µDMA
    11. 9.11 Debug
    12. 9.12 Power Management
    13. 9.13 Clock Systems
    14. 9.14 Network Processor
  10. 10Application, Implementation, and Layout
    1. 10.1 Reference Designs
    2. 10.2 Junction Temperature Calculation
  11. 11Device and Documentation Support
    1. 11.1 Tools and Software
      1. 11.1.1 SimpleLink™ Microcontroller Platform
    2. 11.2 Documentation Support
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Packaging Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGZ|48
散热焊盘机械数据 (封装 | 引脚)
订购信息

Memory

The up to 352-KB nonvolatile (Flash) memory provides storage for code and data. The flash memory is in-system programmable and erasable. The last flash memory sector must contain a Customer Configuration section (CCFG) that is used by boot ROM and TI provided drivers to configure the device. This configuration is done through the ccfg.c source file that is included in all TI provided examples.

The ultra-low leakage system static RAM (SRAM) is split into up to five 16-KB blocks and can be used for both storage of data and execution of code. Retention of SRAM contents in Standby power mode is enabled by default and included in Standby mode power consumption numbers. Parity checking for detection of bit errors in memory is built-in, which reduces chip-level soft errors and thereby increases reliability. System SRAM is always initialized to zeroes upon code execution from boot.

To improve code execution speed and lower power when executing code from nonvolatile memory, a 4-way nonassociative 8-KB cache is enabled by default to cache and prefetch instructions read by the system CPU. The cache can be used as a general-purpose RAM by enabling this feature in the Customer Configuration Area (CCFG).

There is a 4-KB ultra-low leakage SRAM available for use with the Sensor Controller Engine which is typically used for storing Sensor Controller programs, data and configuration parameters. This RAM is also accessible by the system CPU. The Sensor Controller RAM is not cleared to zeroes between system resets.

The ROM includes a TI-RTOS kernel and low-level drivers, as well as significant parts of selected radio stacks, which frees up flash memory for the application. The ROM also contains a serial (SPI and UART) bootloader that can be used for initial programming of the device.