SLUSG46 March   2026 BQ25785

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics BQ2578X
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Power-Up Sequence
      2. 7.3.2  MODE Pin Detection
      3. 7.3.3  REGN Regulator (REGN LDO)
      4. 7.3.4  Independent Comparator Function
      5. 7.3.5  Battery Charging Management
        1. 7.3.5.1 Autonomous Charging Cycle
        2. 7.3.5.2 Battery Charging Profile
        3. 7.3.5.3 Charging Termination
        4. 7.3.5.4 Charging Safety Timer
      6. 7.3.6  Temperature Regulation (TREG)
      7. 7.3.7  Vmin Active Protection (VAP) When Battery Only Mode
      8. 7.3.8  Two Level Battery Discharge Current Limit
      9. 7.3.9  Fast Role Swap Feature
      10. 7.3.10 CHRG_OK Indicator
      11. 7.3.11 Input and Charge Current Sensing
      12. 7.3.12 Input Current and Voltage Limit Setup
      13. 7.3.13 Battery Cell Configuration
      14. 7.3.14 Device HIZ State
      15. 7.3.15 USB On-The-Go (OTG)
      16. 7.3.16 Quasi-dual Phase Converter Operation
      17. 7.3.17 Continuous Conduction Mode (CCM)
      18. 7.3.18 Pulse Frequency Modulation (PFM)
      19. 7.3.19 Switching Frequency and Dithering Feature
      20. 7.3.20 Current and Power Monitor
        1. 7.3.20.1 High-Accuracy Current Sense Amplifier (IADPT and IBAT)
        2. 7.3.20.2 High-Accuracy Power Sense Amplifier (PSYS)
      21. 7.3.21 Input Source Dynamic Power Management
      22. 7.3.22 Integrated 16-Bit ADC for Monitoring
      23. 7.3.23 Input Current Optimizer (ICO)
      24. 7.3.24 Two-Level Adapter Current Limit (Peak Power Mode)
      25. 7.3.25 Processor Hot Indication
        1. 7.3.25.1 PROCHOT During Low Power Mode
        2. 7.3.25.2 PROCHOT Status
      26. 7.3.26 Device Protection
        1. 7.3.26.1  Watchdog Timer (WD)
        2. 7.3.26.2  Input Overvoltage Protection (ACOV)
        3. 7.3.26.3  Input Overcurrent Protection (ACOC)
        4. 7.3.26.4  System Overvoltage Protection (SYSOVP)
        5. 7.3.26.5  System Voltage Maximum Regulation (SYS_MAX)
        6. 7.3.26.6  Battery Overvoltage Protection (BATOVP)
        7. 7.3.26.7  Battery Charge Overcurrent Protection (BATCOC)
        8. 7.3.26.8  Battery Discharge Overcurrent Protection (BATDOC)
        9. 7.3.26.9  BATFET Charge Current Clamp Protection Under LDO Regulation Mode
        10. 7.3.26.10 Sleep Comparator Protection Between VBUS and ACP_A (SC_VBUSACP)
        11. 7.3.26.11 REGN Power Good Protection (REGN_PG)
        12. 7.3.26.12 System Under Voltage Lockout (VSYS_UVP) and Hiccup Mode
        13. 7.3.26.13 OTG Mode Over Voltage Protection (OTG_OVP)
        14. 7.3.26.14 OTG Mode Under Voltage Protection (OTG_UVP)
        15. 7.3.26.15 Thermal Shutdown (TSHUT)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Forward Mode
        1. 7.4.1.1 System Voltage Regulation with Narrow VDC Architecture
        2. 7.4.1.2 Battery Charging
      2. 7.4.2 USB On-The-Go Mode
      3. 7.4.3 Pass Through Mode (PTM)-Patented Technology
      4. 7.4.4 Learn Mode
    5. 7.5 Programming
      1. 7.5.1 SMBus Interface
        1. 7.5.1.1 SMBus Write-Word and Read-Word Protocols
        2. 7.5.1.2 Timing Diagrams
    6. 7.6 BQ25785 Register Map
    7. 7.7 BQ25785 Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Snubber and Filter for Voltage Spike Damping
        2. 8.2.2.2 ACP-ACN Input Filter
        3. 8.2.2.3 Inductor Selection
        4. 8.2.2.4 Input Capacitor
        5. 8.2.2.5 Output Capacitor
        6. 8.2.2.6 Power MOSFETs Selection
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
        1. 8.4.2.1 Layout Example Reference Top View
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Third-Party Products Disclaimer
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

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7.3.13 Battery Cell Configuration

The CELL_BATPRES pin is biased with a resistor divider from REGN_A/B to GND. After REGN_A/B ramps up or CELL_BATPRES pin ramps up, the device detects the battery configuration through CELL_BATPRES pin bias voltage after 2ms delay time. No external capacitor is allowed at the CELL_BATPRES pin. When the CELL_BATPRES pin is pulled down to GND at the beginning of device start up process, CHARGE_VOLTAGE(), SYSOVP, VSYS_MIN() and VRECHG() follow the battery removal row in Battery Cell Configuration.

After device start up, when the battery is removed, the CELL_BATPRES pin must be pulled low through external MOSFET shown in application diagram. If the CELL_BATPRES pin is pulled lower than VCELL_BATPRES_FALL for 1ms deglitch time, then the device disables charge by resetting CHARGE_CURRENT()=000h and EN_AUTO_CHG=0b; at the same time, CHARGE_VOLTAGE(), SYSOVP, VSYS_MIN() and VRECHG() are not changed. When the REGN_A/B voltage rises up or the CELL_BATPRES pin is increased higher than VCELL_BATPRES_RISE, the device must re-read the cell configuration again with a 2ms delay time: CHARGE_VOLTAGE(), SYSOVP, VSYS_MIN() and VRECHG() must be re-detected to corresponding cell setting default value if the values are not changed by EC before; if any of CHARGE_VOLTAGE(), SYSOVP, VSYS_MIN() and VRECHG() are changed by EC before this re-detection then the value must not be influenced by the new detection process anymore. This is needed to avoid EC writing target value back and forth. Refer to Table 7-6 for the CELL_BATPRES pin configuration typical voltage for swept cell count. Note if the device is in learn mode (EN_LEARN=1b). Pulling the CELL_BATPRES pin low clears EN_LEARN bit to 0b and forces device to exit learn mode.

When the CELL_BATPRES pin is pulled to ground, battery removal is indicated. Since there is no battery supplement, the charger can automatically disable IIN_DPM by setting EN_IIN_DPM to 0 to minimize VSYS voltage drop. This function can be enabled through setting IIN_DPM_AUTO_DISABLE=1b. The host can re-enable IIN_DPM function later by writing EN_IIN_DPM bit to 1.

Table 7-6 Battery Cell Configuration
CELL COUNTPIN VOLTAGE WITH RESPECT TO REGN_A/BCHARGE_VOLTAGE()SYSOVPVSYS_MINVRECHG
5S100%21.000V27V15.4V500mV
4S75%16.800V22V12.3V400mV
3S55%12.600V17V9.2V300mV
2S40%8.400V12V6.6V200mV
Battery removal0%8.400V27V6.6V200mV