ZHCS339E August   2010  – June 2019 AFE031

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
  4. 4 修订历史记录
  5. 5 说明（续）
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
    1.     Pin Functions
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Thermal Information
    4. 8.4  Electrical Characteristics: Transmitter (Tx)
    5. 8.5  Electrical Characteristics: Power Amplifier (PA)
    6. 8.6  Electrical Characteristics: Receiver (Rx)
    7. 8.7  Electrical Characteristics: Digital
    8. 8.8  Electrical Characteristics: Two-Wire Interface
    9. 8.9  Electrical Characteristics: Internal Bias Generator
    10. 8.10 Electrical Characteristics: Power Supply
    11. 8.11 Timing Requirements
    12. 8.12 Timing Diagrams
    13. 8.13 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Functional Block Diagram
    2. 9.2 Feature Description
      1. 9.2.1 PA Block
      2. 9.2.2 Tx Block
      3. 9.2.3 Rx Block
      4. 9.2.4 DAC Block
      5. 9.2.5 REF1 and REF2 Blocks
      6. 9.2.6 Zero Crossing Detector Block
      7. 9.2.7 ETx and ERx Blocks
    3. 9.3 Power Supplies
    4. 9.4 Pin Descriptions
      1. 9.4.1 Current Overload
      2. 9.4.2 Thermal Overload
    5. 9.5 Calibration Modes
      1. 9.5.1 Tx Calibration Mode
      2. 9.5.2 Rx Calibration Mode
    6. 9.6 Serial Interface
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Detailed Design Procedure
        1. 10.2.1.1 Line-Coupling Circuit
        2. 10.2.1.2 Circuit Protection
        3. 10.2.1.3 Thermal Considerations
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方产品免责声明
      2. 11.1.2 开发支持
        1. 11.1.2.1 电力线通信开发者套件
        2. 11.1.2.2 TINA-TI™（免费软件下载）
        3. 11.1.2.3 TI 高精度设计
        4. 11.1.2.4 WEBENCH滤波器设计器
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.5 Electrical Characteristics: Power Amplifier (PA)

At TJ = 25°C, PA_VS = 16 V, VAVDD = VDVDD = 3.3 V, and 10 kΩ connected to PA_ISET (pin 46), unless otherwise noted.
PARAMETER CONDITIONS MIN TYP MAX UNIT
Input
Input voltage range GND – 0.1 PA_VS + 0.1 V
RI Input resistance 20 kΩ
Frequency Response
BW Bandwidth ILOAD = 0 670 kHz
SR Slew rate 10-V step 19 V/μs
Full-power bandwidth VOUT = 10 VPP 300 kHz
AC PSRR f = 50 kHz 14 dB
Output
VO Voltage output swing from PA_VS IO = 300 mA, sourcing 0.3 1 V
IO = 1.5 A, sourcing 1.7 2 V
VO Voltage output swing from PA_Gnd IO = 300 mA, sinking 0.3 1 V
IO = 1.5 A, sinking 1.3 2 V
IO Maximum continuous current, dc 7.5 kΩ connected to PA_ISET 1.5 A
Maximum peak current, ac TJ = –40°C to +125°C, f = 50 kHz 1.7 A
RO Output resistance IO = 1.5 A 0.1 Ω
PA disabled Output impedance, f = 100 kHz, REF1 enabled 145 ll 120 kΩ ll pF
Output current limit range ±0.4 to ±1.5 A
Current limit equation ILIM = 20 kΩ • [1.2 V/(RSET + 5 kΩ)] A
Solved for RSET (Current Limit) RSET = [(20 kΩ • 1.2 V/ILIM) – 5 kΩ] Ω
Gain RLOAD = 1 kΩ
G Nominal gain 6.5 V/V
Gain error –1% 0.1% 1%
Gain error drift TJ = –40°C to +125°C ±1 ppm/°C
TSENSE Diode
η Diode ideality factor 1.033
Thermal Shutdown
Junction temperature at shutdown 160 °C
Hysteresis 15 °C
Return to normal operation 145 °C