ZHCSE76E December   2011  – December 2022 ADS1113-Q1 , ADS1114-Q1 , ADS1115-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
    1.     Device Comparison Table
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements: I2C
    7. 6.7 Timing Diagram
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Noise Performance
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1 Multiplexer
      2. 8.3.2 Analog Inputs
      3. 8.3.3 Full-Scale Range (FSR) and LSB Size
      4. 8.3.4 Voltage Reference
      5. 8.3.5 Oscillator
      6. 8.3.6 Output Data Rate and Conversion Time
      7. 8.3.7 Digital Comparator (ADS1114-Q1 and ADS1115-Q1 Only)
      8. 8.3.8 Conversion Ready Pin (ADS1114-Q1 and ADS1115-Q1 Only)
      9. 8.3.9 SMbus 警报响应
    4. 8.4 Device Functional Modes
      1. 8.4.1 Reset and Power-Up
      2. 8.4.2 Operating Modes
        1. 8.4.2.1 Single-Shot Mode
        2. 8.4.2.2 Continuous-Conversion Mode
      3. 8.4.3 Duty Cycling For Low Power
    5. 8.5 Programming
      1. 8.5.1 I2C Interface
        1. 8.5.1.1 I2C Address Selection
        2. 8.5.1.2 I2C General Call
        3. 8.5.1.3 I2C Speed Modes
      2. 8.5.2 Target Mode Operations
        1. 8.5.2.1 Receive Mode
        2. 8.5.2.2 Transmit Mode
      3. 8.5.3 Writing To and Reading From the Registers
      4. 8.5.4 Data Format
    6. 8.6 Register Map
      1. 8.6.1 Address Pointer Register (address = N/A) [reset = N/A]
      2. 8.6.2 Conversion Register (P[1:0] = 00b) [reset = 0000h]
      3. 8.6.3 Config Register (P[1:0] = 01b) [reset = 8583h]
      4. 8.6.4 Lo_thresh (P[1:0] = 10b) [reset = 8000h] and Hi_thresh (P[1:0] = 11b) [reset = 7FFFh] Registers
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Basic Connections
      2. 9.1.2 Single-Ended Inputs
      3. 9.1.3 Input Protection
      4. 9.1.4 Unused Inputs and Outputs
      5. 9.1.5 Analog Input Filtering
      6. 9.1.6 Connecting Multiple Devices
      7. 9.1.7 Quick-Start Guide
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Shunt Resistor Considerations
        2. 9.2.2.2 Operational Amplifier Considerations
        3. 9.2.2.3 ADC Input Common-Mode Considerations
        4. 9.2.2.4 Resistor (R1, R2, R3, R4) Considerations
        5. 9.2.2.5 Noise and Input Impedance Considerations
        6. 9.2.2.6 First-Order RC Filter Considerations
        7. 9.2.2.7 Circuit Implementation
        8. 9.2.2.8 Results Summary
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Power-Supply Sequencing
      2. 9.3.2 Power-Supply Decoupling
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 术语表
  11. 11Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1)
HBM ESD classification level 2		 ±2000 V
Charged-device model (CDM),
per AEC Q100-011
CDM ESD classification level C4B		 Corner pins
(DGS package: Pins 1, 5, 6, and 10)
(NKS package: Pins 1, 4, 5, 6, 9, and 10)		 ±750
All other pins ±500
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.