SBOA386B March   2020  – October 2023 INA180-Q1 , INA181-Q1 , INA185-Q1 , INA2180-Q1 , INA2181-Q1 , INA4180-Q1 , INA4181-Q1

 

  1.   1
  2.   Trademarks
  3. 1Overview
  4. 2Functional Safety Failure In Time (FIT) Rates
    1. 2.1 INA180-Q1, SOT-23-5 Package
    2. 2.2 INA2180-Q1, VSSOP-8 Package
    3. 2.3 INA4180-Q1, TSSOP-14 Package
    4. 2.4 INA181-Q1, SOT-23-6 Package
    5. 2.5 INA2181-Q1, VSSOP-10 Package
    6. 2.6 INA4181-Q1, TSSOP-20 Package
    7. 2.7 INA181-Q1 and INA185-Q1, DCK Package
  5. 3Failure Mode Distribution (FMD)
  6. 4Pin Failure Mode Analysis (Pin FMA)
    1. 4.1 INA180-Q1, SOT-23-5 Package (Pinout A)
    2. 4.2 INA180-Q1, SOT-23-5 Package (Pinout B)
    3. 4.3 INA2180-Q1, VSSOP-8 Package
    4. 4.4 INA4180-Q1, TSSOP-14 Package
    5. 4.5 INA181-Q1, SOT-23-6 Package
    6. 4.6 INA2181-Q1, VSSOP-10 Package
    7. 4.7 INA4181-Q1, TSSOP-20 Package
    8. 4.8 INA181-Q1 and INA185-Q1, DCK Package
  7. 5Revision History

4.3 INA2180-Q1, VSSOP-8 Package

INA2180-Q1 Pin Diagram (VSSOP-8 Package) shows the INA2180-Q1 pin diagram for the VSSOP-8 package. For a detailed description of the device pins please refer to the Pin Configuration and Functions section in the INA2180-Q1 datasheet.


GUID-20200610-SS0I-LDRZ-T83F-LJN62PBPB9ZD-low.png

Figure 4-3 INA2180-Q1 Pin Diagram (VSSOP-8 Package)
Table 4-10 Pin FMA for Device Pins Short-Circuited to Ground
Pin NamePin No.Description of Potential Failure Effect(s)Failure Effect Class
OUT1 1 Output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. B
IN-1 2 In high-side configuration, a short from the bus supply to GND will occur (through RSHUNT). High current will flow from bus supply to GND. The shunt may be damaged. In low-side configuration, normal operation. B for high-side; D for low-side
IN+1 3 In high-side configuration, a short from the bus supply to GND will occur. B
GND 4 Normal operation. D
IN+2 5 In high-side configuration, a short from the bus supply to GND will occur. B
IN-2 6 In high-side configuration, a short from the bus supply to GND will occur (through RSHUNT). High current will flow from bus supply to GND. The shunt may be damaged. In low-side configuration, normal operation. B for high-side; D for low-side
OUT2 7 Output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. B
VS 8 Power supply shorted to GND. B
Table 4-11 Pin FMA for Device Pins Open-Circuited
Pin NamePin No.Description of Potential Failure Effect(s)Failure Effect Class
OUT11Output can be left open. There is no effect on the IC, but the output will not be measured.C
IN-12Shunt resistor is not connected to amplifier. IN-1 pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND.B
IN+13Shunt resistor is not connected to amplifier. IN+1 pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND.B
GND4When GND is floating, output will be incorrect as it is no longer referenced to GND.B
IN+25Shunt resistor is not connected to amplifier. IN+2 pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND.B
IN-26Shunt resistor is not connected to amplifier. IN-2 pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND.B
OUT2 7 Output can be left open. There is no effect on the IC, but the output will not be measured. C
VS 8 No power to device. Device may be biased through inputs. Output will be incorrect and close to GND. B
Table 4-12 Pin FMA for Device Pins Short-Circuited to Adjacent Pin
Pin NamePin No.Shorted toDescription of Potential Failure Effect(s)Failure Effect Class
OUT112 - IN-1In high-side configuration, a short from the bus voltage to the output stage will occur. The device may become damaged. In low-side configuration, output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating, could cause die junction temperature to exceed 150°C.A for high-side; B for low-side
IN-123 - IN+1Inputs shorted together, so no sense voltage applied. Output will stay close to GND.B
IN+134 - GNDIn high-side configuration, a short from the bus supply to GND will occur.B
GND45 - IN+2In high-side configuration, a short from the bus supply to GND will occur.B
IN+256 - IN-2Inputs shorted together, so no sense voltage applied. Output will stay close to GND.B
IN-267 - OUT2In high-side configuration, a short from the bus voltage to the output stage will occur. The device may become damaged. In low-side configuration, output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating, could cause die junction temperature to exceed 150°C.A for high-side; B for low-side
OUT2 7 8 - VS Output will be pulled to VS and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. B
VS 8 1 - OUT1 Output will be pulled to VS and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. B
Table 4-13 Pin FMA for Device Pins Short-Circuited to VS
Pin NamePin No.Description of Potential Failure Effect(s)Failure Effect Class
OUT11Output will be pulled to VS and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C.B
IN-12In high-side configuration, device power supply shorted to bus supply (through RSHUNT). In low-side configuration, device power supply shorted to GND.A for high-side; B for low-side
IN+13In high-side configuration, device power supply shorted to bus supply. In low-side configuration, device power supply shorted to GND (through RSHUNT).A for high-side; B for low-side
GND4Power supply shorted to GND.B
IN+25In high-side configuration, device power supply shorted to bus supply. In low-side configuration, device power supply shorted to GND (through RSHUNT).A for high-side; B for low-side
IN-26In high-side configuration, device power supply shorted to bus supply (through RSHUNT). In low-side configuration, device power supply shorted to GND.A for high-side; B for low-side
OUT2 7 Output will be pulled to VS and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. B
VS 8 Normal operation. D