ZHCSBQ3B October   2013  – July 2014 TPS92411

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Overvoltage Protection (OVP)
      2. 7.3.2 Input Undervoltage Lockout (UVLO)
      3. 7.3.3 LED Capacitor
      4. 7.3.4 Blocking Diode
    4. 7.4 Device Functional Modes
      1. 7.4.1 Input UVLO
      2. 7.4.2 Operating with Internal Switch ON
      3. 7.4.3 Operating with Internal Switch OFF
      4. 7.4.4 Overvoltage Operation (TPS92411P)
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 120-VAC, Phase Dimmable 11.5-W Input with Discrete Linear Regulator
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Setting the Switching Thresholds (RSNS, RSET)
        3. 8.2.1.3 Application Curve
      2. 8.2.2 230-VAC, Phase Dimmable 16-W Input with Discrete Linear Regulator
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 相关链接
    2. 11.2 商标
    3. 11.3 静电放电警告
    4. 11.4 术语表
  12. 12机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

All voltages are with respect to VS, –40 °C < TJ = TA ≤ 150 °C. All currents are positive into and negative out of the specified terminal (unless otherwise noted).
MIN MAX UNIT
Supply voltage VIN –0.3 105 V
Switch voltage DRAIN –0.3 105
Junction temperature TJ –40 165 ºC

6.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) 1 kV
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) 250 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted)
MIN TYP MAX UNIT
VIN Input voltage TPS92411P 7.5 94 V
TPS92411 7.5 100
TJ Operating junction temperature –40 25 150 °C

6.4 Thermal Information

THERMAL METRIC(1) TPS92411 UNIT
DBV DDA
5 PINS 8 PINS
θJA Junction-to-ambient thermal resistance(2) 209.8 58.6 °C/W
θJCtop Junction-to-case (top) thermal resistance(3) 125.2 72
θJB Junction-to-board thermal resistance(4) 38 39.1
ψJT Junction-to-top characterization parameter(5) 15.6 21.6
ψJB Junction-to-board characterization parameter(6) 37.1 39.1
θJCbot Junction-to-case (bottom) thermal resistance(7) N/A 15
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specified JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8.
(5) The junction-to-top characterization parameter, θJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, θJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

6.5 Electrical Characteristics

Unless otherwise specified –40 °C ≤ TJ = TA ≤ 150 °C, (VVIN – VVS) = 30 V, RRSET = RRSNS = Open, all voltages are with respect to VS.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT SUPPLY (VIN)
VIN(ovp) Input overvoltage protection TPS92411P Rising threshold 95 100 V
Falling threshold 96
Hysteresis 4
IQ Bias current 200 400 μA
VIN(uvlo) Input undervoltage lockout Rising threshold 6.5 7 V
VIN(hys) Input UVLO hysteresis 370 mV
SWITCH CONTROL (RSNS, RSET)
IRSNS RSNS threshold current –3.3 –4 –4.9 μA
VRSNS_OS RSNS offset voltage 165 210 255 mV
VRSET RSET threshold voltage 1.2 1.25 1.3 V
IRSET RSET current IRSNS = –20 μA, (VRSET – VVS) = 1.5 V –9.3 –10 –10.7 μA
IRSNS = –40 μA, (VRSET – VVS) = 1.5 V –19 –20 –21
IRSNS = –100 μA, (VRSET – VVS) = 1.5 V –47.9 –50 –52.1
SWITCH (DRAIN, VS)
RDS(on) On-resistance IDRAIN = 100 mA, TJ = 25°C 1 2 2.5 Ω
dv/dt(ON) Switch ON slew rate (VDRAIN – VVS) falling 36 V to 4 V,
ISW = 100 mA		 1 V/μs
dv/dt(OFF) Switch OFF slew rate (VDRAIN – VVS) = rising 4 V to 36 V,
ISW = 100 mA		 0.5

6.6 Typical Characteristics

Unless otherwise stated, –40 °C ≤ TA = TJ ≤ 150 °C, (VVIN – VVS) = 30 V, all voltages are with respect to VS.
g000.pngFigure 1. UVLO vs. Temperature
g002.pngFigure 3. RSET Threshold vs. Temperature
g004.pngFigure 5. Switch On-Resistance (RDS(on)) vs. Temperature
g006.pngFigure 7. (VVIN – VVS) Overvoltage Threshold vs. Temperature
g001.pngFigure 2. UVLO vs. Temperature
g003.pngFigure 4. RSNS Threshold Current vs. Temperature
g005.pngFigure 6. Input Voltage Quiescent Current vs. Temperature