ZHCSIS2B september   2018  – december 2020 TPS7A11

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Excellent Transient Response
        1. 7.3.1.1 Global Undervoltage Lockout (UVLO)
      2. 7.3.2 Active Discharge
      3. 7.3.3 Enable Pin
      4. 7.3.4 Sequencing Requirement
      5. 7.3.5 Internal Foldback Current Limit
      6. 7.3.6 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Mode
      2. 7.4.2 Dropout Mode
      3. 7.4.3 Disable Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Recommended Capacitor Types
      2. 8.1.2 Input and Output Capacitor Requirements
      3. 8.1.3 Load Transient Response
      4. 8.1.4 Dropout Voltage
      5. 8.1.5 Behavior During Transition From Dropout Into Regulation
      6. 8.1.6 Undervoltage Lockout Circuit Operation
      7. 8.1.7 Power Dissipation (PD)
      8. 8.1.8 Estimating Junction Temperature
      9. 8.1.9 Recommended Area for Continuous Operation
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedures
      3. 8.2.3 Application Curve
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Evaluation Module
      2. 11.1.2 Spice Model
      3. 11.1.3 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 静电放电警告
    7. 11.7 术语表
  13.   Mechanical, Packaging, and Orderable Information

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7.3.6 Thermal Shutdown

The device contains a thermal shutdown protection circuit to disable the device when the thermal junction temperature (TJ ) of the main pass-FET rises to the thermal shutdown temperature (TSD) for shutdown listed in the Electrical Characteristics table. Thermal shutdown hysteresis ensures that the LDO resets again (turns on) when the temperature falls to TSD for reset.

The thermal time constant of the semiconductor die is fairly short, and thus the device may cycle on and off when thermal shutdown is reached until the power dissipation is reduced.

For reliable operation, limit the junction temperature to a maximum of 125°C. Operation above 125°C causes the device to exceed the operational specifications. Although the internal protection circuitry of the device is designed to protect against thermal overload conditions, this circuitry is not intended to replace proper heat sinking. Continuously running the device into thermal shutdown or above a junction temperature of 125°C reduces long-term reliability.

A fast start up when TJ > TSD for reset (typical, outside of the specified operation range) causes the device thermal shutdown to assert at TSD for reset, and prevents the device from turning on until the junction temperature is reduced below TSD for reset.