ZHCSAI3E May   2012  – March 2017 TPS65131-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power Conversion
      2. 8.3.2 Control
      3. 8.3.3 Output Rails Enable or Disable
      4. 8.3.4 Load Disconnect
      5. 8.3.5 Soft Start
      6. 8.3.6 Overvoltage Protection
      7. 8.3.7 Undervoltage Lockout
      8. 8.3.8 Overtemperature Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power-Save Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 TPS65131-Q1 With VPOS = 10.5 V, VNEG = -10 V
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Programming the Output Voltage
            1. 9.2.1.2.1.1 Boost Converter
            2. 9.2.1.2.1.2 Inverting Converter
          2. 9.2.1.2.2 Inductor Selection
          3. 9.2.1.2.3 Capacitor Selection
            1. 9.2.1.2.3.1 Input Capacitor
            2. 9.2.1.2.3.2 Output Capacitors
          4. 9.2.1.2.4 Rectifier Diode Selection
          5. 9.2.1.2.5 External P-MOSFET Selection
          6. 9.2.1.2.6 Stabilizing the Control Loop
            1. 9.2.1.2.6.1 Feedforward Capacitors
            2. 9.2.1.2.6.2 Compensation Capacitors
        3. 9.2.1.3 Analog Supply Input Filter
          1. 9.2.1.3.1 RC-Filter
          2. 9.2.1.3.2 LC-Filter
        4. 9.2.1.4 Thermal Information
        5. 9.2.1.5 Application Curves
      2. 9.2.2 TPS65131-Q1 With VPOS = 5.5 V, VNEG = -5 V
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Application Curves
      3. 9.2.3 TPS65131-Q1 With VPOS = 15 V, VNEG = -15 V
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 商标
    3. 12.3 静电放电警告
    4. 12.4 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

4 修订历史记录

Changes from D Revision (October 2014) to E Revision

  • Changed 特性项标条目文本从“...通过认证..”改为“...测试指南..”并且 HBM 分类等级从“H2”改为“H1C”Go
  • Moved Tstg spec to the Abs Max Ratings table per new data sheet standardGo
  • Changed "Handling Ratings" to "ESD Ratings" and HBM Value From "±2 kV" to "±1000 V".Go
  • Changed Electrical Characteristics condition statement to "This specification applies over the full recommended input voltage range VI = 2.7 V to 5.5 V and over the temperature range TJ = –40°C to 125°C unless otherwise noted. Typical values apply for VI = 3.6 V and TJ = 25°C."Go
  • Changed The specification applies over the full recommended input voltage range VI = 2.7 V to 5.5 V and over the temperature range TJ = –40 °C to 125°C unless otherwise noted. Typical values apply for VI = 3.6 V and TJ = 25°Go
  • Added Analog Supply Input Filter description Go

Changes from C Revision (March 2014) to D Revision

  • 全局编辑更改，数据表使用了全新的格式Go
  • Changed 最大效率从 89% 改为 91% 以及从 81% 改为 85%Go
  • Deleted “最低 1.25MHz”Go
  • Changed 1µA 关断电流至典型的 0.2µAGo
  • Relocated and renamed the pin Functions table Go
  • Added thermal pad to pin Functions Table.Go
  • Added Thermal Pad to Absolute Maximum Ratings. Added min./max. values where missingGo
  • Added V(VIN), V(INN), VNEG, VPOS, V(ENN), V(ENP), V(PSN) to Recommended Operating Conditions tableGo
  • Changed symbol names to JEDEC complianceGo
  • Added frequency and duty cycles to Switching Characteristics table. Removed from Electrical Characteristics tableGo
  • Added Rectifier Diode Selection GuideGo
  • Added P-MOSFET Selection GuideGo

Changes from B Revision (February 2013) to C Revision

  • Added “已在 -40°C 至 125°C 的结温范围内测试电气特性”Go
  • Deleted TA table rowGo
  • Changed INN to VINN, added pin names VIN and INNGo
  • Added pin name VPOSGo
  • Added pin name VNEGGo
  • Changed INP to VINP, added pin name INPGo
  • Changed "between pins OUTN to VINN" to "between pins OUTN to INN"Go
  • Added operating junction temperatureGo
  • Added "In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may require derating. See Thermal Information for details."Go
  • Deleted "virtual" from "Operating virtual junction temperature range"Go
  • Changed Electrical Characteristics condition statement to "This specification applies over the full recommended input voltage range VI = 2.7 V to 5.5 V and over the temperature range TJ = TA = –40°C to 125°C unless otherwise noted. Typical values apply for VI = 3.6 V and TJ = TA = 25°C."Go
  • Changed ILIM,min = 1800 mA to 1700 mAGo
  • Deleted VPOS = 5 V (105°C) rowGo
  • Changed rDS(on)P,max (VPOS = 5 V) = 300 mΩ to 390 mΩGo
  • Changed rDS(on)P,max (VPOS = 10 V) = 200 mΩ to 230 mΩGo
  • Changed ILIMP,min = 1800 mA to 1700 mAGo
  • Changed ILIMP,max = 2200 mA to 2250 mAGo
  • Added TA = –40°C to 85°CGo
  • Changed minimum f = 1250 kHz to 1150 kHzGo
  • Editorially updated Block DiagramGo
  • Changed "The maximum recommended junction temperature (TJ) of the TPS65131-Q1 is 125°C." to "The recommended device junction temperature range, TJ, is -40°C to 125°C."Go
  • Changed RθJA = 37.8°C/W to RθJA = 34.1°C/WGo
  • Changed "Specified regulator operation is ensured to a maximum ambient temperature TA of 105°C." to "The recommended operating ambient temperature range for the device is TA = –40°C to 105°C."Go
  • Changed "Therefore, the maximum power dissipation is about 1058 mW" to "Use Equation 13 to calculate the maximum power dissipation, PDmax, as a function of TA. In this equation, use TJ = 125°C to operate the device within the recommended temperature range, use TJ = T(TS) to determine the absolute maximum threshold when the device might go into thermal shutdown."Go
  • Changed Equation 13Go

Changes from A Revision (November 2012) to B Revision

  • 将 CDM ESD 等级从 C3B 改为 C4B。Go

Changes from * Revision (May 2012) to A Revision

  • 器件将从预览推进到生产Go
  • Added thermal information table values.Go
  • Added VPOS = 5 V (105°C) row and values to Electrical Characteristics table.Go