ZHCSGO0A June 2017 – February 2024 TPS549B22
PRODUCTION DATA
请参考 PDF 数据表获取器件具体的封装图。
The TPS549B22 device is a high-performance, integrated FET converter supporting current rating up to 25 A thermally. It integrates two N-channel NexFET™ power MOSFETs, enabling high power density and small PCB layout area. The drain-to-source breakdown voltage for these FETs is 25-V DC and 27-V transient for 10 ns. Avalanche breakdown occurs if the absolute maximum voltage rating exceeds 27 V. To limit the switch node ringing of the device, TI recommends adding an R-C snubber from the SW node to the PGND pins. Refer to Section 8.4.1 for the detailed recommendations.