ZHCS610 数据表 | 德州仪器 TI.com.cn

ZHCS610D December 2011 – December 2021 TPS28225-Q1

PRODUCTION DATA

封装选项

机械数据 (封装 | 引脚)

D|8
- MSOI002K
DRB|8
- MPDS118K

散热焊盘机械数据 (封装 | 引脚)

DRB|8
- QFND058N

订购信息

6.7 Typical Characteristics

V_EN/PG = Low

PWM Input Floating

V_DD = 7.2 V

Figure 6-2 Bias Supply Current vs Temperature

V_DD = 7.2 V

Figure 6-4 Enable/Power Good Threshold vs Temperature

V_DD = 7.2 V

Figure 6-6 UGATE DC Output Impedance vs Temperature

V_DD = 7.2 V

C_LOAD = 3 nF

Figure 6-8 UGATE Rise and Fall Time vs Temperature

V_DD = 7.2 V

C_LOAD = 3 nF

Figure 6-10 UGATE and LGATE (Turning OFF Propagation Delays) vs Temperature

V_DD = 7.2 V

C_LOAD = 3 nF

Figure 6-12 UGATE Minimum Short Pulse vs Temperature

V_DD = 7.2 V

No Load

T_J = 25°C

Figure 6-14 Bias Supply Current vs Switching Frequency

Figure 6-16 PWM Input Rising Switching Waveforms

Figure 6-18 Minimum UGATE Pulse Switching Waveforms

Figure 6-3 Undervoltage Lockout Threshold vs Temperature

V_DD = 7.2 V

Figure 6-5 PWM 3-State Thresholds (5-V Input Pulses) vs Temperature

V_DD = 7.2 V

Figure 6-7 LGATE DC Output Impedance vs Temperature

V_DD = 7.2 V

C_LOAD = 3 nF

Figure 6-9 LGATE Rise and Fall Time vs Temperature

V_DD = 7.2 V

C_LOAD = 3 nF

Figure 6-11 UGATE and LGATE (Dead Time) vs Temperature

V_DD = 7.2 V

I_F = 100 mA

Figure 6-13 Bootstrap Diode Forward Voltage vs Temperature

Different load charge

V_DD = 7.2 V

T_J = 25°C

Figure 6-15 Driver Dissipated Power vs Switching Frequency

Figure 6-17 PWM Input Falling Switching Waveforms

Figure 6-19 Normal and Three-State Operation ENTER/EXIT Conditions