ZHCSHZ4D April   2018  – October 2023 TLV758P

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Undervoltage Lockout (UVLO)
      2. 6.3.2 Shutdown
      3. 6.3.3 Foldback Current Limit
      4. 6.3.4 Thermal Shutdown
    4. 6.4 Device Functional Modes
      1. 6.4.1 Device Functional Mode Comparison
      2. 6.4.2 Normal Operation
      3. 6.4.3 Dropout Operation
      4. 6.4.4 Disabled
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Adjustable Device Feedback Resistors
      2. 7.1.2 Input and Output Capacitor Selection
      3. 7.1.3 Dropout Voltage
      4. 7.1.4 Exiting Dropout
      5. 7.1.5 Reverse Current
      6. 7.1.6 Power Dissipation (PD)
      7. 7.1.7 Feed-Forward Capacitor (CFF)
      8. 7.1.8 Start-Up Sequencing
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input Current
        2. 7.2.2.2 Thermal Dissipation
      3. 7.2.3 Application Curve
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Examples
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Device Nomenclature
      2. 8.1.2 Related Documentation
    2. 8.2 接收文档更新通知
    3. 8.3 支持资源
    4. 8.4 Trademarks
    5. 8.5 静电放电警告
    6. 8.6 术语表
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

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5.5 Electrical Characteristics

at operating temperature range (TJ = –40°C to +125°C),VIN = VOUT(NOM) + 0.5 V or 1.5 V (whichever is greater), IOUT = 1 mA, VEN = VIN, and CIN = COUT = 1 μF (unless otherwise noted); all typical values are at TJ = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VFB Feedback voltage TJ = 25°C 0.55 V
Output accuracy(1) TJ = 25°C –0.7% 0.7%
–40°C ≤ TJ ≤ +85°C –1% 1%
–40°C ≤ TJ ≤ +125°C –1.5% 1.5%
Line regulation VOUT(NOM) + 0.5 V(2) ≤ VIN ≤ 6.0 V 2 7.5 mV
Load regulation 0.1 mA ≤ IOUT ≤ 500 mA, VIN ≥ 2.0 V 0.030 V/A
IGND Ground current IOUT = 0 mA TJ = 25°C 10 25 31 µA
IGND Ground current –40°C ≤ TJ ≤ +125°C 35 µA
ISHDN Shutdown current VEN ≤ 0.3 V, 1.5 V ≤ VIN ≤ 6.0 V 0.1 1 µA
IFB Feedback pin current 0.01 0.1 µA
ICL Output current limit VIN = VOUT(NOM) + 1.0 V VOUT = VOUT(NOM) – 0.2 V,
VOUT < 1.5 V		 530 720 865 mA
VOUT = 0.9 V × VOUT(NOM),
VOUT ≥ 1.5 V		 530 720 865
ISC Short-circuit current limit VIN = VOUT(NOM) + 1.0 V VOUT = 0 V 350 mA
VDO Dropout voltage IOUT = 500 mA,
–40°C ≤ TJ ≤ +125°C,
VOUT = 0.95 × VOUT(NOM)		 0.65 V ≤ VOUT < 0.8 V 720 880 mV
0.8 V ≤ VOUT < 1.0 V 585 750
1.0 V ≤ VOUT < 1.2 V 420 570
1.2 V ≤ VOUT < 1.5 V 285 400
1.5 V ≤ VOUT < 1.8 V 180 235
1.8 V ≤ VOUT < 2.5 V 140 185
2.5 V ≤ VOUT < 3.3 V 102 140
3.3 V ≤ VOUT ≤ 5.5 V 95 130
PSRR Power-supply rejection ratio VIN = VOUT(NOM) + 1.0 V,
IOUT = 50 mA		 f = 1 kHz 50 dB
f = 100 kHz 45
f = 1 MHz 30
Vn Output noise voltage BW = 10 Hz to 100 kHz, VOUT = 0.9 V 53 µVRMS
VUVLO Undervoltage lockout VIN rising 1.21 1.33 1.47 V
VIN falling 1.17 1.29 1.42 V
VUVLO, HYST Undervoltage lockout hysteresis VIN Hysteresis 40 mV
tSTR Start-up time From EN low-to-high transition to VOUT = VOUT(NOM) × 95% 500 µs
VEN(HI) EN pin high voltage 1.0 V
VEN(LO) EN pin low voltage  0.3 V
IEN Enable pin current VIN = EN = 6.0 V 10 nA
RPULL DOWN Pulldown resistance VIN = 6.0 V 95 Ω
TSD Thermal shutdown Shutdown, temperature increasing 170 °C
Reset, temperature decreasing 155
(1) When the device is connected to external feedback resistors at the FB pin, external resistor tolerances are not included
(2) VIN = 1.5 V for VOUT < 1.0 V.