ZHCSEZ1E May   2016  – May 2021 THS6212

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: VS = 12 V
    6. 6.6 Electrical Characteristics: VS = 28 V
    7. 6.7 Timing Requirements
    8. 6.8 Typical Characteristics: VS = 12 V
    9. 6.9 Typical Characteristics: VS = 28 V
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Output Voltage and Current Drive
      2. 7.3.2 Driving Capacitive Loads
      3. 7.3.3 Distortion Performance
      4. 7.3.4 Differential Noise Performance
      5. 7.3.5 DC Accuracy and Offset Control
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Wideband Current-Feedback Operation
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Dual-Supply Downstream Driver
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Line Driver Headroom Requirements
          2. 8.2.2.2.2 Computing Total Driver Power for Line-Driving Applications
    3. 8.3 What To Do and What Not to Do
      1. 8.3.1 What To Do
      2. 8.3.2 What Not to Do
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

4 Revision History

Changes from Revision D (Novermber 2019) to Revision E (May 2021)

  • 更新了整个文档中的表格、图和交叉参考的编号格式Go
  • 将特性 列表中的中偏置模式值从 17.7mA 更改为 17.5mAGo
  • 将特性 列表中的低偏置模式值从 12.2mA 更改为 11.9mAGo
  • 将特性 列表中的电压噪声值从 2.7nV/√Hz 更改为 2.5nV/√Hz Go
  • 将特性 列表中的反相电流噪声值从 17pA/√Hz 更改为 18pA/√Hz Go
  • 将特性 列表中的同相电流噪声值从 1.2pA/√Hz 更改为 1.4pA/√Hz Go
  • 将特性 列表中的 HD2 失真从 -100dBc 更改为 -86dBcGo
  • 将特性 列表中的 HD3 失真从 -89dBc 更改为 -101dBcGo
  • 将特性 列表中的输出电流从 > 416mA 更改为 > 665mAGo
  • 将特性 列表中的输出摆幅从 43.2Vpp 更改为 49VppGo
  • 将特性 列表中的带宽从 150MHz 更改为 205MHzGo
  • 将特性 列表中的 PSRR 从 50dB 更改为 > 55dBGo
  • 将特性 列表中的过热保护从 170°C 更改为 175°CGo
  • 将差分失真更改为 HD2 并更新了说明 部分的值Go
  • 将说明 部分的输出摆幅从 43.2Vpp 更改为 49VppGo
  • 将说明 部分的电源从 ±12V 更改为 28VGo
  • 将说明 部分的电流驱动从 416mA 更改为 650mAGo
  • 从文档中删除了 YS 接合焊盘封装Go
  • 更改了采用 THS6212 的典型线路驱动器电路 图Go
  • Removed YS die package and Bond Pad Functions tableGo
  • Deleted Output current, IO from Absolute Maximum RatingsGo
  • Added Bias control pin voltage in Absolute Maximum Ratings Go
  • Added Input voltage to all pins except VS+, VS-, and BIAS control in Absolute Maximum Ratings Go
  • Added Input current limit in Absolute Maximum Ratings Go
  • Changed Maximum junction, TJ from 130 C to 125 C in Absolute Maximum Ratings Go
  • Deleted ESD MM in ESD Ratings Go
  • Changed Operating junction temperature from 130°C to 125°C in Recommended Operating ConditionsGo
  • Added Minimum ambient operating air temperature spec in Recommended Operating Conditions Go
  • Changed RΘJA from 33.2 °C/W to 42.3 °C/W in Thermal Information Go
  • Changed RΘJC(Top) from 31.7 °C/W to 32.8 °C/W in Thermal Information Go
  • Changed RΘJB from 11.3 °C/W to 20.9 °C/W in Thermal Information Go
  • Changed ψJT from 0.4 °C/W to 3.8 °C/W in Thermal Information Go
  • Changed ψJB from 11.3 °C/W to 20.9 °C/W in Thermal Information Go
  • Changed ψJC(bot) from 3.9 °C/W to 9.5 °C/W in Thermal Information Go
  • Added Electrical Characteristics: VS = 12V tableGo
  • Deleted Electrical Characteristics: VS = ±6 V tableGo
  • Added Electrical Characteristics: VS = 28V table Go
  • Deleted Deleted Electrical Characteristics: VS = ±12 V tableGo
  • Changed tON from 1µs to 25ns in Timing Requirements Go
  • Changed tOFF from 1µs to 275ns in Timing Requirements Go
  • Added Typical Characteristics: VS = 12 VGo
  • Deleted Typical Characteristics: VS = ±6 V (Full Bias)Go
  • Deleted Typical Characteristics: VS = ±6 V (Mid Bias)Go
  • Deleted Typical Characteristics: VS = ±6 V (Low Bias)Go
  • Added Typical Characteristics: VS = 28 VGo
  • Deleted Typical Characteristics: VS = ±12 V (Full Bias)Go
  • Deleted Typical Characteristics: VS = ±12 V (Mid Bias)Go
  • Deleted Typical Characteristics: VS = ±12 V (Low Bias)Go
  • Changed output swing from 43.2 Vpp to 49 Vpp in Overview sectionGo
  • Changed current drive from 416 mA to 650 mA in Overview sectionGo
  • Changed thermal protection junction temperature from 170°C to 175°C in Overview sectionGo
  • Deleted Output Current and Voltage sectionGo
  • Added Output Voltage and Current Drive sectionGo
  • Changed referenced figures for RS versus capacitive load in Driving Capacitive Loads sectionGo
  • Changed ±12-V supplies to 28-V supply in Distortion Performance sectionGo
  • Changed ±6-V supplies to 12-V supply in Distortion Performance sectionGo
  • Changed noise evaluation from Section 8.2.2 to Figure 8-1 in Differential Noise Performance sectionGo
  • Added RS = 50 Ω in Differential Noise Performance sectionGo
  • Changed 38.9 nV/√ Hz calculation to 53.3 nV/√ Hz in Differential Noise Performance sectionGo
  • Changed 7 nV/√ Hz calculation to 6.5 nV/√ Hz in Differential Noise Performance sectionGo
  • Changed output offset calculation to typical rather than worst case in DC Accuracy and Offset Control sectionGo
  • Changed quiescent current value from 23 mA to 19.5 mA in Wideband Current-Feedback Operation sectionGo
  • Changed swing from 1.9 V from either rail to 49 Vpp in Wideband Current-Feedback Operation sectionGo
  • Changed current drive from 416 mA to 650 mA inWideband Current-Feedback Operation sectionGo
  • Changed ± 6 V supply to 28 V supply inWideband Current-Feedback Operation sectionGo
  • Changed 140 MHz bandwidth to 285 MHz inWideband Current-Feedback Operation sectionGo
  • Changed Noninverting Differential I/O Amplifierfigure inWideband Current-Feedback Operation sectionGo
  • Changed Frequency Response and Harmonic Distortion figures in Application Curves sectionGo
  • Changed Dual-Supply Downstream Driver figureGo
  • Changed supply voltages to ±14 V in Line Driver Headroom Requirements sectionGo
  • Changed quiescent current value from 23 mA to 19.5 mA and ±12 V to ±14 V in Computing Total Driver Power for Line-Driving Applications Go
  • Changed 23 mA to 19.5 mA, 24 V to 28 V and 1003 mW to 11 mW in Computing Total Driver Power for Line-Driving Applications Go
  • Changed supply range from "±5 V to ±14 V" to "10 V to 28 V" in Power Supply Recommendations sectionGo
  • Changed referenced figures for RS versus capacitive load in Driving Capacitive Loads sectionGo
  • Deleted Wafer and Die Information sectionGo
  • Changed ±12-V to 28-V in Layout Guidelines sectionGo

Changes from Revision C (May 2016) to Revision D (Novermber 2019)

  • 添加了最后两个特性 要点Go
  • Added last paragraph to Overview section Go
  • Changed Dual-Supply Downstream Driver figureGo

Changes from Revision B (May 2018) to Revision C (July 2018)

  • 在文档中添加了 YS 接合焊盘封装Go
  • Added YS die package and Bond Pad Functions table Go
  • Added Wafer and Die Information sectionGo

Changes from Revision A (March 2017) to Revision B (May 2018)

  • 将特性 列表中的满偏置模式值从 21mA 更改为 23mAGo
  • 将特性 列表中的中偏置模式值从 16.2mA 更改为 17.7mAGo
  • 将特性 列表中的低偏置模式值从 11.2mA 更改为 12.2mAGo
  • Added "With Exposed Thermal Pad" to pinout drawing description to Pin Configuration and Functions section Go
  • Changed quiescent current value from 21 mA to 23 mA in Wideband Current-Feedback Operation sectionGo
  • Changed quiescent current value from 21 mA to 23 mA in Computing Total Driver Power for Line-Driving Applications Go
  • Changed 21 mA to 23 mA and 955 mW to 1003 mW in Computing Total Driver Power for Line-Driving Applications Go
  • Changed Board Layout Guidelines section title to Layout Guidelines to align with standardsGo

Changes from Revision * (May 2016) to Revision A (March 2017)

  • 将文档标题从 THS6212 差分线路驱动器放大器 更改为 THS6212 差分宽带 PLC 线路驱动器放大器 Go
  • 将说明 部分第二句中的线路驱动器应用（例如宽带电力线通信） 更改为宽带和宽带电力线通信 (PLC) 线路驱动器应用 Go