ZHCSDM5G March 2012 – December 2014 LMK00105
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Vdd | Core Supply Voltage | –0.3 | 3.6 | V |
Vddo | Output Supply Voltage | –0.3 | 3.6 | V |
VIN | Input Voltage | –0.3 | Vdd + 0.3 | V |
TL | Lead Temperature (solder 4 s) | 260 | °C | |
TJ | Junction Temperature | 125 | °C | |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2500 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|
TA | Ambient Temperature | –40 | 25 | 85 | °C |
Vdd | Core Supply Voltage | 2.375 | 3.3 | 3.45 | V |
Vddo | Output Supply Voltage (1) | 1.425 | 3.3 | Vdd | V |
THERMAL METRIC(1) | LMK00105 | UNIT | |
---|---|---|---|
RTW | |||
24 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 46.7 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 50.3 | |
RθJB | Junction-to-board thermal resistance | 25.5 | |
ψJT | Junction-to-top characterization parameter | 1.9 | |
ψJB | Junction-to-board characterization parameter | 25.6 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 13.6 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
TOTAL DEVICE CHARACTERISTICS | ||||||
Vdd | Core Supply Voltage | 2.375 | 2.5 or 3.3 | 3.45 | V | |
Vddo | Output Supply Voltage | 1.425 | 1.5, 1.8, 2.5, or 3.3 | Vdd | V | |
IVdd | Core Current | No CLKin | 16 | 25 | mA | |
Vddo = 3.3 V, Ftest = 100 MHz | 24 | |||||
Vddo = 2.5 V, Ftest = 100 MHz | 20 | |||||
IVddo[n] | Current for Each Output | Vddo = 2.5 V, OE = High, Ftest = 100 MHz |
5 | mA | ||
Vddo= 3.3 V, OE = High, Ftest = 100 MHz |
7 | |||||
OE = Low | 0.1 | |||||
IVdd + IVddo | Total Device Current with Loads on all outputs | OE = High @ 100 MHz | 48 | mA | ||
OE = Low | 16 | |||||
POWER SUPPLY RIPPLE REJECTION (PSRR) | ||||||
PSRR | Ripple Induced Phase Spur Level |
100 kHz, 100 mVpp Ripple Injected on Vdd, Vddo = 2.5 V |
-44 | dBc | ||
OUTPUTS (1) | ||||||
Skew | Output Skew (8) | Measured between outputs, referenced to CLKout0 |
6 | 25 | ps | |
tPD | Propagation Delay CLKin to CLKout (8) | CL = 5 pF, RL = 50 Ω Vdd = 3.3 V; Vddo = 3.3 V |
0.85 | 1.4 | 2.2 | ns |
CL = 5 pF, RL = 50 Ω Vdd = 2.5 V; Vddo = 1.5 V |
1.1 | 1.8 | 2.8 | ns | ||
tPD, PP | Part-to-part Skew (8)(2) | CL = 5 pF, RL = 50 Ω Vdd = 3.3 V; Vddo = 3.3 V |
0.35 | ns | ||
CL = 5 pF, RL = 50 Ω Vdd = 2.5 V; Vddo = 1.5 V |
0.6 | ns | ||||
fCLKout | Output Frequency (3) | DC | 200 | MHz | ||
tRise | Rise/Fall Time | Vdd = 3.3 V, Vddo = 1.8 V, CL = 10 pF | 250 | ps | ||
Vdd = 2.5 V, Vddo = 2.5 V, CL = 10 pF | 275 | |||||
Vdd = 3.3 V, Vddo = 3.3 V, CL = 10 pF | 315 | |||||
VCLKoutLow | Output Low Voltage | 0.1 | V | |||
VCLKoutHigh | Output High Voltage | Vddo-0.1 | ||||
RCLKout | Output Resistance | 50 | ohm | |||
tj | RMS Additive Jitter | fCLKout = 156.25 MHz, CMOS input slew rate ≥ 2 V/ns CL = 5 pF, BW = 12 kHz to 20 MHz |
30 | fs | ||
DIGITAL INPUTS (OE, SEL0, SEL1) | ||||||
VLow | Input Low Voltage | Vdd = 2.5 V | 0.4 | V | ||
VHigh | Input High Voltage | Vdd = 2.5 V | 1.3 | |||
Vdd = 3.3 V | 1.6 | |||||
IIH | High Level Input Current | 50 | uA | |||
IIL | Low Level Input Current | -5 | 5 | |||
CLKin/CLKin* INPUT CLOCK SPECIFICATIONS(4)(5) | ||||||
IIH | High Level Input Current | VCLKin = Vdd | 20 | uA | ||
IIL | Low Level Input Current | VCLKin = 0 V | –20 | uA | ||
VIH | Input High Voltage | Vdd | V | |||
VIL | Input Low Voltage | GND | ||||
VCM | Differential Input Common Mode Input Voltage (7) |
VID = 150 mV | 0.5 | Vdd- 1.2 |
V | |
VID = 350 mV | 0.5 | Vdd- 1.1 |
||||
VID = 800 mV | 0.5 | Vdd- 0.9 |
||||
VI_SE | Single-Ended Input Voltage Swing (8) | CLKinX driven single-ended (AC or DC coupled), CLKinX* AC coupled to GND or externally biased within VCM range | 0.3 | 2 | Vpp | |
VID | Differential Input Voltage Swing | CLKin driven differentially | 0.15 | 1.5 | V | |
OSCin/OSCout PINS | ||||||
fOSCin | Input Frequency (3) | Single-Ended Input, OSCout floating | DC | 200 | MHz | |
fXTAL | Crystal Frequency Input Range | Fundamental Mode Crystal ESR < 200 Ω ( fXtal ≤ 30 MHz ) ESR < 120 Ω ( fXtal > 30 MHz ) (3)(6) |
10 | 40 | MHz | |
COSCin | Shunt Capacitance | 1 | pF | |||
VIH | Input High Voltage | Single-Ended Input, OSCout floating | 2.5 | V |