ZHCSJN1C September   2000  – September 2022 INA118

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 绝对最大额定值
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Noise Performance
      2. 8.4.2 Input Common-Mode Range
      3. 8.4.3 Input Protection
  9. 9 应用和实现
    1. 9.1 应用信息
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Setting the Gain
        2. 9.2.2.2 Dynamic Performance
        3. 9.2.2.3 Offset Trimming
        4. 9.2.2.4 Input Bias Current Return Path
      3. 9.2.3 应用曲线
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Low-Voltage Operation
      2. 9.3.2 Single-Supply Operation
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 术语表
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.5 Electrical Characteristics

at TA = 25°C, VS = ±15 V, VCM = 0 V, and RL = 10 kΩ (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
INPUT
Offset voltage, RTIInitialTA = 25°CINA118PB, UB±10 ± 50 / G±50 ± 500 / GµV
INA118P, U±25 ±100 / G±125 ±1000 / G
vs TemperatureTA = –40°C to +85°CINA118PB, UB±0.2 ± 2 / G±0.5 ± 20 / GµV/°C
INA118P, U±0.2 ± 5 / G±1 ± 20 / G
vs Power supplyVS = ±2.25 V to ±18 VINA118PB, UB±1 ±10 / G±5 ± 100 / GµV/V
INA118P, U±1 ±10 / G±10 ±100 / G
Long-term stability±0.4 ±5 / GµV/mo
ImpedanceDifferential1010 || 1Ω || pF
Common-mode1010 || 4
Linear input voltage(V+) – 2(V+) – 1.4V
(V–) + 2(V–) + 1.2
Safe input voltage±40V
Common-mode rejectionVCM = ±10 V, ΔRS = 1 kΩ, G = 1INA118PB, UB8090dB
INA118P, U7390
VCM = ±10 V, ΔRS = 1 kΩ, G = 10INA118PB, UB97110
INA118P, U89110
VCM = ±10 V, ΔRS = 1 kΩ, G = 100INA118PB, UB107120
INA118P, U98120
VCM = ±10 V, ΔRS = 1 kΩ, G = 1000INA118PB, UB110125
INA118P, U100125
Bias currentINA118PB, UB±1±5nA
INA118P, U±1±10
Bias current driftTA = –40°C to +85°C±40pA/°C
Offset currentINA118PB, UB±1±5nA
INA118P, U±1±10
Offset current driftTA = –40°C to +85°C±40pA/°C
Noise voltage, RTIG = 1000, RS = 0 Ω f = 10 Hz11nV/√Hz
f = 100 Hz10nV/√Hz
f = 1 kHz10nV/√Hz
fB = 0.1 Hz to 10 Hz0.28µVp-p
Noise current f = 10 Hz2pA/√Hz
f = 1 kHz0.3
fB = 0.1 Hz to 10 Hz80pAp-p
GAIN
Gain equation1 + (50 kΩ / RG)V/V
Gain110000V/V
Gain errorG = 1±0.01%±0.024%
G = 10±0.02%±0.4%
G = 100±0.05%±0.5%
G = 1000±0.5%±1%
Gain driftG = 1, TA = –40°C to +85°C±1±10ppm/°C
50-kΩ resistance drift(1)TA = –40°C to +85°C±25±100ppm/°C
NonlinearityG = 1±0.0003±0.001% of FSR
G = 10±0.0005±0.002
G = 100±0.0005±0.002
G = 1000±0.002±0.01
OUTPUT
Voltage:PositiveRL = 10 kΩ(V+) – 1(V+) – 0.8V
Negative RL = 10 kΩ(V–) + 0.35(V–) + 0.2
Single supply highV+ = 4.5 V, V– = 0 V(2), RL = 10 kΩ1.82
Single supply low V+ = 4.5 V, V– = 0 V(2), RL = 10 kΩ6035mV
Load capacitance stability1000pF
Short circuit current+5/–12mA
FREQUENCY RESPONSE
Bandwidth, –3 dBG = 1800kHz
G = 10500
G = 10070
G = 10007
Slew rateVO = ±10 V, G = 100.9V/µs
Settling time, 0.01%G = 115µs
G = 1015
G = 10021
G = 1000210
Overload recovery50% overdrive20µs
POWER SUPPLY
CurrentVIN = 0 V±350±385µA
(1) Temperature coefficient of the 50-kΩ term in the gain equation.
(2) Common-mode input voltage range is limited. See text for discussion of low power supply and single power supply operation.