ZHCSGI4B August 2017 – February 2022 CSD22205L
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | ||||||
| BVDSS | Drain-to-source voltage | VGS = 0 V, ID = –250 μA | –8 | V | ||
| IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = –6.4 V | –100 | nA | ||
| IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = –6 V | –100 | nA | ||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = –250 μA | –0.4 | –0.7 | –1.05 | V |
| RDS(on) | Drain-to-source on-resistance | VGS = –1.5 V, ID = –0.2 A | 30 | mΩ | ||
| VGS = –1.8 V, ID = –1 A | 20 | 40 | ||||
| VGS = –2.5 V, ID = –1 A | 11.5 | 15.0 | ||||
| VGS = –4.5 V, ID = –1 A | 8.2 | 9.9 | ||||
| gfs | Transconductance | VDS = –0.8 V, ID = –1 A | 10.4 | S | ||
| DYNAMIC CHARACTERISTICS | ||||||
| CISS | Input capacitance | VGS = 0 V, VDS = –4 V, ƒ = 1 MHz | 1070 | 1390 | pF | |
| COSS | Output capacitance | 560 | 730 | pF | ||
| CRSS | Reverse transfer capacitance | 190 | 250 | pF | ||
| RG | Series gate resistance | 30 | Ω | |||
| Qg | Gate charge total (–4.5 V) | VDS = –4 V, ID = –1 A | 6.5 | 8.5 | nC | |
| Qgd | Gate charge gate-to-drain | 1.0 | nC | |||
| Qgs | Gate charge gate-to-source | 1.2 | nC | |||
| Qg(th) | Gate charge at Vth | 0.7 | nC | |||
| QOSS | Output charge | VDS = –4 V, VGS = 0 V | 4.1 | nC | ||
| td(on) | Turnon delay time | VDS = –4 V, VGS = –4.5 V, ID = –1 A , RG = 0 Ω | 30 | ns | ||
| tr | Rise time | 14 | ns | |||
| td(off) | Turnoff delay time | 70 | ns | |||
| tf | Fall time | 32 | ns | |||
| DIODE CHARACTERISTICS | ||||||
| VSD | Diode forward voltage | IS = –1 A, VGS = 0 V | –0.68 | –1.0 | V | |
| Qrr | Reverse recovery charge | VDS= –4 V, IF = –1 A, di/dt = 200 A/μs | 16 | nC | ||
| trr | Reverse recovery time | 38 | ns | |||