ZHCSGI4B 数据表 | 德州仪器 TI.com.cn

ZHCSGI4B August 2017 – February 2022 CSD22205L

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

5.3 Typical MOSFET Characteristics

T_A = 25°C (unless otherwise stated)

Figure 5-1 Saturation Characteristics

Figure 5-3 Maximum Drain Current vs Temperature

Figure 5-5 Capacitance

Figure 5-7 On-State Resistance vs Gate-to-Source Voltage

Figure 5-9 Typical Diode Forward Voltage

Figure 5-11 Transient Thermal Impedance

V_DS = –5 V

Figure 5-2 Transfer Characteristics

I_D = –1 A

V_DS = –4 V

Figure 5-4 Gate Charge

I_D = –250 µA

Figure 5-6 Threshold Voltage vs Temperature

I_D = –1 A

Figure 5-8 Normalized On-State Resistance vs Temperature

Single pulse, typical R_θJA = 225°C/W

Figure 5-10 Maximum Safe Operating Area