ZHCS656A 数据表 | 德州仪器 TI.com.cn

ZHCS656A December 2011 – September 2016 CSD16327Q3

PRODUCTION DATA.

请参考 PDF 数据表获取器件具体的封装图。

T_A = 25°C (unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

	I_D = 24 A	V_DS = 12.5 V

Figure 4. Gate Charge

	I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = 24 A

Figure 8. Normalized On-State Resistance vs Temperature

	Single pulse, max R_θJC = 1.7°C/W

Figure 10. Maximum Safe Operating Area

Figure 12. Maximum Drain Current vs Temperature

	V_DS = 5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching