ZHCS656A December   2011  – September 2016 CSD16327Q3

PRODUCTION DATA.  

  1. 1特性
  2. 2应用范围
  3. 3说明
    1.     Device Images
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 接收文档更新通知
    2. 6.2 社区资源
    3. 6.3 商标
    4. 6.4 静电放电警告
    5. 6.5 Glossary
  7. 7机械、封装和可订购信息
    1. 7.1 Q3 封装尺寸
    2. 7.2 建议 PCB 布局
    3. 7.3 建议模版开孔
    4. 7.4 Q3 卷带信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DQG|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 25 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 20 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = +10 / –8 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 0.9 1.2 1.4 V
RDS(on) Drain-to-source on-resistance VGS = 3 V, ID = 24 A 5 6.5 mΩ
VGS = 4.5 V, ID = 24 A 4 4.8
VGS = 8 V, ID = 24 A 3.4 4.0
gfs Transconductance VDS = 12.5 V, ID = 24 A 96 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0 V, VDS = 12.5 V, ƒ = 1 MHz 1020 1300 pF
COSS Output capacitance 740 960 pF
CRSS Reverse transfer capacitance 50 65 pF
Rg Series gate resistance 1.4 2.8 Ω
Qg Gate charge total (4.5 V) VDS = 12.5 V, ID = 24 A 6.2 8.4 nC
Qgd Gate charge gate-to-drain 1.1 nC
Qgs Gate charge gate-to-source 1.8 nC
Qg(th) Gate charge at Vth 1 nC
QOSS Output charge VDS = 12.5 V, VGS = 0 V 14 nC
td(on) Turnon delay time VDS = 12.5 V, VGS = 4.5 V ID = 24 A
RG = 2 Ω		 5.3 ns
tr Rise time 15 ns
td(off) Turnoff delay time 13 ns
tf Fall time 6.3 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IS = 24 A, VGS = 0 V 0.85 1 V
Qrr Reverse recovery charge VDD = 12.5 V, IF = 24 A, di/dt = 300 A/μs 21 nC
trr Reverse recovery time VDD = 12.5 V, IF = 24 A, di/dt = 300 A/μs 16 ns