ZHCSJI9A March   2019  – June 2019 BQ25886

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     简化原理图
  4. 修订历史记录
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Device Power-On-Reset
      2. 8.3.2  Device Power Up from Battery without Input Source
      3. 8.3.3  Device Power Up from Input Source
        1. 8.3.3.1 Poor Source Qualification
        2. 8.3.3.2 Input Source Type Detection
          1. 8.3.3.2.1 D+/D– Detection Sets Input Current Limit
        3. 8.3.3.3 Power Up REGN Regulator (LDO)
        4. 8.3.3.4 Converter Power Up
      4. 8.3.4  Input Current Optimizer (ICO)
      5. 8.3.5  Buck Mode Operation from Battery (OTG)
      6. 8.3.6  PowerPath Management
        1. 8.3.6.1 Narrow VDC Architecture
        2. 8.3.6.2 Dynamic Power Management
        3. 8.3.6.3 Supplement Mode
      7. 8.3.7  Battery Charging Management
        1. 8.3.7.1 Autonomous Charging Cycle
        2. 8.3.7.2 Battery Charging Profile
        3. 8.3.7.3 Charging Termination
        4. 8.3.7.4 Thermistor Qualification
          1. 8.3.7.4.1 JEITA Guideline Compliance in Charge Mode
        5. 8.3.7.5 Charging Safety Timer
      8. 8.3.8  Status Outputs
        1. 8.3.8.1 Power Good Indicator (PG)
        2. 8.3.8.2 Charging Status Indicator (STAT)
      9. 8.3.9  Input Current Limit on ILIM Pin
      10. 8.3.10 Voltage and Current Monitoring
        1. 8.3.10.1 Voltage and Current Monitoring in Boost Mode
          1. 8.3.10.1.1 Input Over-Voltage Protection
          2. 8.3.10.1.2 Input Under-Voltage Protection
          3. 8.3.10.1.3 System Over-Voltage Protection
          4. 8.3.10.1.4 System Over-Current Protection
        2. 8.3.10.2 Voltage and Current Monitoring in OTG Buck Mode
          1. 8.3.10.2.1 VBUS Over-voltage Protection
          2. 8.3.10.2.2 VBUS Over-Current Protection
      11. 8.3.11 Thermal Regulation and Thermal Shutdown
        1. 8.3.11.1 Thermal Protection in Boost Mode
        2. 8.3.11.2 Thermal Protection in OTG Buck Mode
      12. 8.3.12 Battery Protection
        1. 8.3.12.1 Battery Over-Voltage Protection (BATOVP)
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Inductor Selection
        2. 9.2.2.2 Input (VBUS / PMID) Capacitor
        3. 9.2.2.3 Output (VSYS) Capacitor
        4. 9.2.2.4 ILIM resistor
        5. 9.2.2.5 ICHGSET resistor
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 第三方产品免责声明
    2. 12.2 文档支持
      1. 12.2.1 相关文档
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

静电放电警告

esds-image

ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可能会损坏集成电路。

ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可能会导致器件与其发布的规格不相符。