ZHCSJI9A March   2019  – June 2019 BQ25886

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     简化原理图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Device Power-On-Reset
      2. 8.3.2  Device Power Up from Battery without Input Source
      3. 8.3.3  Device Power Up from Input Source
        1. 8.3.3.1 Poor Source Qualification
        2. 8.3.3.2 Input Source Type Detection
          1. 8.3.3.2.1 D+/D– Detection Sets Input Current Limit
        3. 8.3.3.3 Power Up REGN Regulator (LDO)
        4. 8.3.3.4 Converter Power Up
      4. 8.3.4  Input Current Optimizer (ICO)
      5. 8.3.5  Buck Mode Operation from Battery (OTG)
      6. 8.3.6  PowerPath Management
        1. 8.3.6.1 Narrow VDC Architecture
        2. 8.3.6.2 Dynamic Power Management
        3. 8.3.6.3 Supplement Mode
      7. 8.3.7  Battery Charging Management
        1. 8.3.7.1 Autonomous Charging Cycle
        2. 8.3.7.2 Battery Charging Profile
        3. 8.3.7.3 Charging Termination
        4. 8.3.7.4 Thermistor Qualification
          1. 8.3.7.4.1 JEITA Guideline Compliance in Charge Mode
        5. 8.3.7.5 Charging Safety Timer
      8. 8.3.8  Status Outputs
        1. 8.3.8.1 Power Good Indicator (PG)
        2. 8.3.8.2 Charging Status Indicator (STAT)
      9. 8.3.9  Input Current Limit on ILIM Pin
      10. 8.3.10 Voltage and Current Monitoring
        1. 8.3.10.1 Voltage and Current Monitoring in Boost Mode
          1. 8.3.10.1.1 Input Over-Voltage Protection
          2. 8.3.10.1.2 Input Under-Voltage Protection
          3. 8.3.10.1.3 System Over-Voltage Protection
          4. 8.3.10.1.4 System Over-Current Protection
        2. 8.3.10.2 Voltage and Current Monitoring in OTG Buck Mode
          1. 8.3.10.2.1 VBUS Over-voltage Protection
          2. 8.3.10.2.2 VBUS Over-Current Protection
      11. 8.3.11 Thermal Regulation and Thermal Shutdown
        1. 8.3.11.1 Thermal Protection in Boost Mode
        2. 8.3.11.2 Thermal Protection in OTG Buck Mode
      12. 8.3.12 Battery Protection
        1. 8.3.12.1 Battery Over-Voltage Protection (BATOVP)
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Inductor Selection
        2. 9.2.2.2 Input (VBUS / PMID) Capacitor
        3. 9.2.2.3 Output (VSYS) Capacitor
        4. 9.2.2.4 ILIM resistor
        5. 9.2.2.5 ICHGSET resistor
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 第三方产品免责声明
    2. 12.2 文档支持
      1. 12.2.1 相关文档
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Pin Configuration and Functions

RGE Package (Standalone)
24-Pin VQFN
Top View
BQ25886 BQ25886-Pinout-OTG-Centered.gif

Pin Functions

PIN I/O DESCRIPTION
NAME NO.
D+ 24 AIO Positive USB data line – D+/D– based USB host/charging port detection. The detection includes data contact detection (DCD) and secondary detection in BC1.2.
D– 1 AIO Negative USB data line – D+/D– based USB host/charging port detection. The detection includes data contact detection (DCD) and secondary detection in BC1.2.
STAT 2 DO Open drain charge status indicator – Connect to the pull-up rail via 10-kΩ resistor. LOW indicates charge in progress. HIGH indicates charge complete or charge disabled. When any fault occurs, the STAT pin blinks at 1Hz.
CE 3 DI Active Low Charge Enable Pin – Battery charging is enabled when CE pin is LOW. CE pin is internally pulled low with 900k-Ω resistor.
OTG 5 DI OTG – USB On-The-Go Enable input. Pull high to enable OTG function. Pull low to disable OTG function.
VSET 6 AI Battery Charge Voltage Limit – VSET pin sets battery charge voltage. Program battery regulation voltage with a resistor pull-down from VSET to GND as follows:
RVSET< 18kΩ (short to GND) = 8.2 V
RVSET= 39kΩ (±10%) = 8.8 V
RVSET= 75kΩ (±10%) = 8.7 V
RVSET> 150kΩ (floating) = 8.4 V
TS 7 AI Temperature Qualification Voltage – Connect a negative temperature coefficient thermistor. Program temperature window with a resistor divider from REGN to TS to GND. Charge suspends when TS pin is out of range. Recommend 103AT-2 thermistor.
ILIM 8 AI Input Current Limit (IINDPM) – ILIM pin sets the maximum input current and can be used to monitor input current. IINDPM loop regulates ILIM pin voltage at 0.8V. When ILIM pin is less than 0.8V, the input current can be calculated by IIN = KILIM x VILIM / (RILIM x 0.8V). A resistor connected from ILIM pin to ground sets the input current limit as maximum (IINMAX = KILIM / RILIM). When ILIM pin is short to GND, the input current limit is set to maximum by ILIM. Input current limit less than 500mA is not supported on ILIM pin. Do not float this pin.
PG 9 DO Open drain active low power good indicator – Connect to the pull up rail via 10-kΩ resistor. LOW indicates a good input source if the input voltage is within VVBUS_OP (3.9 V), and can provide more than IPOORSRC (30 mA).
ICHGSET 10 AI Charge Current Limit – A resistor from ICHGSET to GND is used to program the charge current. The acceptable programming range on ICHGSET pin is 30mA (114Ω) – 2.2A (8kΩ). Pre-charge and termination current is 1/10 of the fast charge current. The minimum pre-charge current is clamped at 30mA (typ). Minimum termination current is clamped at 10mA (typ). ICHGSET short to GND clamps charge current to minimum setting 30mA (typ). Floating ICHGSET disables charge.
REGN 11 P Gate Drive Supply – Bias supply for internal MOSFETs driver and IC. Bypass REGN to GND with a 4.7-µF ceramic capacitor. REGN current limit is 50 mA.
BTST 12 P PWM High-side Driver Supply – Internally, BTST is connected to the cathode of the boot-strap diode. Connect a 47nF bootstrap capacitor from SW to BTST.
BAT 13, 14 P Battery Power Connection – Connect minimum recommended 10-µF capacitance after derating closely to the BAT pin and GND.
SYS 15, 16 P System Connection – The internal BATFET is connected between SYS and BAT. When the battery falls below the minimum system voltage, the switch-mode converter keeps SYS above the minimum system voltage. Connect a 2x22-µF capacitance after derating closely to the SYS pin and PGND.
SW 17, 18 P Inductor Connection – Connect to the switched side of the external inductor.
GND 19, 20, 4 – Ground Return
PMID 21, 22 P Blocking MOSFET Connection – The minimum recommended total input low-ESR capacitance on VBUS and PMID, after applied derating, is 10 uF.  At least 1-uF is recommended at VBUS with the remainder at PMID.  Typical value for PMID is 10 uF.
VBUS 23 P Input Supply – VBUS is connected to the external DC supply. Bypass VBUS to GND with at least 1-µF ceramic capacitor, placed as close to the IC as possible.
NC 1 – No Connect – Leave these pins floating or tie to ground.