ZHCSCX4A June   2014  – October 2014 ADS8339

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Device Family
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Parametric Measurement Information
    1. 8.1 Timing Diagrams
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Analog Input
      2. 9.3.2 Power Saving
      3. 9.3.3 Digital Output
      4. 9.3.4 SCLK Input
    4. 9.4 Device Functional Modes
      1. 9.4.1 CS Mode for a 3-Wire Interface
        1. 9.4.1.1 3-Wire CS Mode Without a Busy Indicator
        2. 9.4.1.2 3-Wire CS Mode With a Busy Indicator
      2. 9.4.2 CS Mode for a 4-Wire Interface
        1. 9.4.2.1 4-Wire CS Mode Without a Busy Indicator
        2. 9.4.2.2 4-Wire CS Mode With a Busy Indicator
      3. 9.4.3 Daisy-Chain Mode
        1. 9.4.3.1 Daisy-Chain Mode Without a Busy Indicator
        2. 9.4.3.2 Daisy-Chain Mode With a Busy Indicator
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 ADC Reference Driver
        1. 10.1.1.1 Reference Driver Circuit
      2. 10.1.2 ADC Input Driver
        1. 10.1.2.1 Input Amplifier Selection
        2. 10.1.2.2 Antialiasing Filter
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
    3. 10.3 Do's and Don'ts
  11. 11Power-Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 文档支持
      1. 13.1.1 相关文档　
    2. 13.2 商标
    3. 13.3 静电放电警告
    4. 13.4 术语表
  14. 14机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
+IN, –IN input Voltage –0.3 +VA + 0.3 V
Momentary current(2) 130 mA
Continuous current ±10 mA
+VA to GND –0.3 7 V
+VBD to GND –0.3 7 V
Digital input voltage to GND –0.3 +VBD + 0.3 V
Digital output voltage to GND –0.3 +VBD + 0.3 V
Temperature Operating free-air range, TA –40 85 °C
Junction, TJ max 150 °C
VSSOP package Power dissipation (TJmax – TA) / θJA °C
θJA thermal impedance 121.1 °C/W
Maximum VSSOP reflow temperature(3) 260 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Limit the duration for this current to less than 10 ms.
(3) The device is rated at MSL2, 260°C, as per the JSTD-020 specification.

7.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) –1000 1000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) –250 250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V+VA Analog power-supply voltage 4.5 5.0 5.5 V
V+VBD Digital I/O-supply voltage 2.375 3.3 5.5 V
Vref Reference voltage 2.25 4.096 V+VA + 0.1 V
f(SCLK) SCLK frequency 25 MHz
TA Operating temperature range –40 85 °C

7.4 Thermal Information

THERMAL METRIC(1) ADS8339 UNIT
DGS (VSSOP)
10 PINS
RθJA Junction-to-ambient thermal resistance 121.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 29.4
RθJB Junction-to-board thermal resistance 32.0
ψJT Junction-to-top characterization parameter 0.7
ψJB Junction-to-board characterization parameter 31.5
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

All minimum and maximum specifications are at TA = –40°C to 85°C, +VA = 5 V, +VBD = 5 V to 2.375 V, Vref = 4 V, and fsample = 250 kHz, unless otherwise noted. Typical specifications are at TA = 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUT
Full-scale input span(1) +IN – (–IN) 0 Vref V
Operating input range +IN –0.1 Vref + 0.1 V
–IN –0.1 0.1 V
Ci Input capacitance 59 pF
Input leakage current During acquisition 1000 pA
SYSTEM PERFORMANCE
Resolution 16 Bits
NMC No missing codes 16 Bits
INL Integral linearity(7) –2.0 ±1.2 2.0 LSB(2)
DNL Differential linearity At 16-bit level –0.99 ±0.65 1.0 LSB
EO Offset error(3) –1.5 ±0.3 1.5 mV
EG Gain error –0.03 ±0.0045 0.03 %FSR
CMRR Common-mode rejection ratio With common-mode input signal = 200 mVPP
at 250 kHz		 78 dB
PSRR Power-supply rejection ratio At FFF0h output code 80 dB
Transition noise 0.5 LSB
SAMPLING DYNAMICS
tcnv Conversion time 500(4) 3300 ns
tacq Acquisition time 700 ns
Maximum throughput rate
with or without latency		 0.25 MHz
Aperture delay 2.5 ns
Aperture jitter, RMS 6 ps
Step response Settling to 16-bit accuracy 600 ns
Overvoltage recovery Settling to 16-bit accuracy 600 ns
DYNAMIC CHARACTERISTICS
THD Total harmonic distortion(5) VIN = 0.4 dB below fS at 1 kHz, Vref = 5 V –111 dB
VIN = 0.4 dB below fS at 10 kHz, Vref = 5 V –106 dB
SNR Signal-to-noise ratio VIN = 0.4 dB below fS at 1 kHz, Vref = 5 V 93.9 dB
VIN = 0.4 dB below fS at 10 kHz, Vref = 5 V 93.6 dB
SINAD Signal-to-noise + distortion VIN = 0.4 dB below fS at 1 kHz, Vref = 5 V 93.8 dB
VIN = 0.4 dB below fS at 10 kHz, Vref = 5 V 93.4 dB
SFDR Spurious-free dynamic range VIN = 0.4 dB below fS at 1 kHz, Vref = 5 V 113 dB
VIN = 0.4 dB below fS at 10 kHz, Vref = 5 V 107 dB
–3-dB small-signal bandwidth 15 MHz
EXTERNAL REFERENCE INPUT
Vref Input range 2.25 4.096 VA + 0.1 V
Reference input current(6) During conversion 75 μA
POWER-SUPPLY REQUIREMENTS
Power-supply voltage +VBD 2.375 3.3 5.5 V
+VA 4.5 5 5.5 V
ICC Supply current +VA 250-kHz sample rate 3.5 4.0 mA
PVA Power dissipation +VA = 5 V, 250-kHz sample rate 17.5 20.0 mW
IVApd Device power-down current(8) +VA = 5 V 50 300 nA
LOGIC FAMILY CMOS
VIH High-level input voltage IIH = 5 μA 0.7 × VBD VBD + 0.3 V
VIL Low-level input voltage IIL = 5 μA –0.3 0.3 × VBD V
VOH High-level output voltage IOH = 2 TTL loads VBD – 0.3 VBD V
VOL Low-level output voltage IOL = 2 TTL loads 0 0.4 V
TEMPERATURE RANGE
TA Operating free-air temperature –40 85 °C
(1) Ideal input span, does not include gain or offset error.
(2) LSB = least significant bit.
(3) Measured relative to actual measured reference.
(5) Calculated on the first nine harmonics of the input frequency.
(6) Can vary by ±20%.
(7) This parameter is the endpoint INL, not best-fit INL.
(8) The device automatically enters a power-down state at the end of every conversion and remains in a power-down state as long as the device is in an acquisition phase.

7.6 Timing Requirements

All specifications are at TA = –40°C to 85°C, +VA = 5 V, and 5.5 V > +VBD ≥ 2.375 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SAMPLING AND CONVERSION
tacq Acquisition time
(see Figure 47, Figure 49, Figure 50, Figure 53)		 700 ns
tcnv Conversion time
(see Figure 47, Figure 49, Figure 50, Figure 53)		 500(1) 3300 ns
tcyc Time between conversions
(see Figure 47, Figure 49, Figure 50, Figure 53)		 4000 ns
t1 Pulse duration, CONVST high (see Figure 47, Figure 49) 10 ns
t6 Pulse duration, CONVST low
(see Figure 50, Figure 53, Figure 55)		 20 ns
INPUTS AND OUTPUTS (I/O)
tclk SCLK period (see Figure 47, Figure 49, Figure 50, Figure 53, Figure 55, Figure 57) 40.0 ns
tclkl SCLK low time (see Figure 47, Figure 49, Figure 50, Figure 53, Figure 55, Figure 57) 0.45 0.55 tclk
tclkh SCLK high time (see Figure 47, Figure 49, Figure 50, Figure 53, Figure 55, Figure 57) 0.45 0.55 tclk
t2 SCLK falling edge to data remains valid (see Figure 47, Figure 49, Figure 50, Figure 53, Figure 55, Figure 57) 5 ns
t3 SCLK falling edge to next data valid delay (see Figure 47, Figure 49, Figure 50, Figure 53, Figure 55, Figure 57) 5.5 V ≥ +VBD ≥ 4.5 V 16 ns
4.5 V > +VBD ≥ 2.375 V 24 ns
ten CONVST or SDI low to MSB valid
(see Figure 47, Figure 50)		 5.5 V ≥ +VBD ≥ 4.5 V 15 ns
4.5 V > +VBD ≥ 2.375 V 22 ns
tdis CONVST or SDI high or last SCLK falling edge to SDO
3-state (CS mode)
(see Figure 47, Figure 49, Figure 50, Figure 53)		 5.5 V ≥ +VBD ≥ 4.5 V 12 ns
4.5 V > +VBD ≥ 2.375 V 15 ns
t4 SDI valid setup time to CONVST rising edge
(see Figure 50, Figure 53)		 5 ns
t5 SDI valid hold time from CONVST rising edge
(see Figure 50, Figure 53)		 5 ns
t7 SCLK valid setup time to CONVST rising edge
(see Figure 55)		 5 ns
t8 SCLK valid hold time from CONVST rising edge
(see Figure 55)		 5 ns
(1) Refer to the CS Mode for a 3-Wire Interface subsection in the Device Functional Modes section.

7.7 Typical Characteristics

At TA = 30°C, +VA = 5 V, +VBD = 2.7 V, Vref = 4.096 V, and fsample = 250 kHz, unless otherwise noted.
C001_SBAS677.png
+VBD = 2.7 V, Vref = 4.096 V, fS = 250 kSPS, TA = 30°C
Figure 1. Offset Error vs Supply Voltage
C003_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, fS = 250 kSPS, TA = 30°C
Figure 3. Offset Error vs Reference Voltage
C005_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, fS = 250 kSPS
Figure 5. Offset Error vs Free-Air Temperature
C007_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, fS = 250 kSPS
Figure 7. Gain Error Drift Histogram
C009_SBAS677.png
+VBD = 2.7 V, Vref = 4.096 V, fS = 250 kSPS, TA = 30°C
Figure 9. DNL vs Supply Voltage
C011_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, fS = 250 kSPS, TA = 30°C
Figure 11. DNL vs Reference Voltage
C013_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, fS = 250 kSPS
Figure 13. DNL vs Free-Air Temperature
C015_SBAS677.png
+VBD = 2.7 V, Vref = 5 V, fIN = 1.9 kHz, fS = 250 kSPS,
TA = 30°C
Figure 15. ENOB vs Supply Voltage
C017_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, fIN = 1.9 kHz,
fS = 250 kSPS
Figure 17. ENOB vs Free-Air Temperature
C019_SBAS677.png
+VBD = 2.7 V, Vref = 4.096 V, fIN = 1.9 kHz, fS = 250 kSPS,
TA = 30°C
Figure 19. SINAD vs Supply Voltage
C021_SBAS677.png
+VBD = 2.7 V, Vref = 4.096 V, fIN = 1.9 kHz, fS = 250 kSPS,
TA = 30°C
Figure 21. THD vs Supply Voltage
C023_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, fIN = 1.9 kHz, fS = 250 kSPS, TA = 30°C
Figure 23. SINAD vs Reference Voltage
C025_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, fIN = 1.9 kHz, fS = 250 kSPS, TA = 30°C
Figure 25. THD vs Reference Voltage
C027_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, fIN = 1.9 kHz,
fS = 250 kSPS
Figure 27. SINAD vs Free-Air Temperature
C029_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, fIN = 1.9 kHz,
fS = 250 kSPS
Figure 29. THD vs Free-Air Temperature
C031_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, fS = 250 kSPS, TA = 30°C
Figure 31. THD vs Signal Input Frequency
C033_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, fIN = 1.9 kHz,
fS = 250 kSPS, TA = 30°C
Figure 33. THD vs Source Resistance
C035_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, fS = 250 kSPS
Figure 35. Supply Current vs Free-Air Temperature
C037_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, TA = 30°C
Figure 37. Power Dissipation vs Sampling Frequency
C039_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 4.096 V, fS = 250 kSPS
Figure 39. Power-Down Current vs Free-Air Temperature
C041_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, fS = 250 kSPS, TA = 30°C
Figure 41. INL Error vs Output Code
C002_SBAS677.png
+VBD = 2.7 V, Vref = 4.096 V, fS = 250 kSPS, TA = 30°C
Figure 2. Gain Error vs Supply Voltage
C004_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, fS = 250 kSPS, TA = 30°C
Figure 4. Gain Error vs Reference Voltage
C006_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, fS = 250 kSPS
Figure 6. Gain Error vs Free-Air Temperature
C008_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, fS = 250 kSPS
Figure 8. Offset Error Drift Histogram
C010_SBAS677.png
+VBD = 2.7 V, Vref = 4.096 V, fS = 250 kSPS, TA = 30°C
Figure 10. INL vs Supply Voltage
C012_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, fS = 250 kSPS, TA = 30°C
Figure 12. INL vs Reference Voltage
C014_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, fS = 250 kSPS
Figure 14. INL vs Free-Air Temperature
C016_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, fIN = 1.9 kHz, fS = 250 kSPS, TA = 30°C
Figure 16. ENOB vs Reference Voltage
C018_SBAS677.png
+VBD = 2.7 V, Vref = 4.096 V, fIN = 1.9 kHz, fS = 250 kSPS,
TA = 30°C
Figure 18. SFDR vs Supply Voltage
C020_SBAS677.png
+VBD = 2.7 V, Vref = 4.096 V, fIN = 1.9 kHz, fS = 250 kSPS,
TA = 30°C
Figure 20. SNR vs Supply Voltage
C022_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, fIN = 1.9 kHz, fS = 250 kSPS, TA = 30°C
Figure 22. SFDR vs Reference Voltage
C024_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, fIN = 1.9 kHz, fS = 250 kSPS, TA = 30°C
Figure 24. SNR vs Reference Voltage
C026_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, fIN = 1.9 kHz,
fS = 250 kSPS
Figure 26. SFDR vs Free-Air Temperature
C028_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, fIN = 1.9 kHz,
fS = 250 kSPS
Figure 28. SNR vs Free-Air Temperature
C030_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, fS = 250 kSPS, TA = 30°C
Figure 30. SINAD vs Signal Input Frequency
C032_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, fS = 250 kSPS, TA = 30°C
Figure 32. DC Histogram of ADC Close-to-Center Code
C034_SBAS677.png
+VBD = 2.7 V, Vref = 4.096 V, fS = 250 kSPS, TA = 30°C
Figure 34. Supply Current vs Supply Voltage
C036_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, TA = 30°C
Figure 36. Supply Current vs Sampling Frequency
C038_SBAS677.png
+VBD = 2.7 V, Vref = 4.096 V, fS = 250 kSPS, TA = 30°C
Figure 38. Power-Down Current vs Supply Voltage
C040_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, fS = 250 kSPS, TA = 30°C
Figure 40. DNL Error vs Output Code
C042_SBAS677.png
+VBD = 2.7 V, +VA = 5 V, Vref = 5 V, fIN = 1.9 kHz,
fS = 250 kSPS, TA = 30°C
Figure 42. Signal Strength vs Frequency