首頁 電源管理 閘極驅動器 隔離式閘極驅動器

UCC21520-Q1

現行

Automotive, 4A/6A dual-channel reinforced isolated gate driver with disable, programmable deadtime

現在提供此產品的更新版本

open-in-new 比較替代產品
針腳對針腳的功能與所比較的裝置相同。
UCC21550-Q1 現行 具有停用功能、可編程失效時間的車用增強型 4A/6A 雙通道隔離式閘極驅動器 Tighter VCCI range supporting digital controller thresholds. New DT equation. Increased CMTI and wider operating temperature range.

產品詳細資料

Number of channels 2 Isolation rating Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable, Programmable dead time Output VCC/VDD (min) (V) 6.5, 9.2 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8 TI functional safety category Functional Safety Quality-Managed
Number of channels 2 Isolation rating Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable, Programmable dead time Output VCC/VDD (min) (V) 6.5, 9.2 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8 TI functional safety category Functional Safety Quality-Managed
SOIC (DW) 16 106.09 mm² (10.3 mm × 10.3 mm)
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1
  • Functional safety quality-managed
  • Junction temperature range –40 to +150°C
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Surge immunity up to 10kV
  • Isolation barrier life >40 years
  • 4A peak source, 6A peak sink output
  • 3V to 18V input VCCI range to interface with both digital and analog controllers
  • Up to 25V VDD output drive supply
    • 5V and 8V VDD UVLO options
  • Programmable overlap and dead time
  • Fast disable for power sequencing
  • Safety-related certifications:
    • 8000VPK reinforced Isolation per DIN EN IEC 60747-17 (VDE 0884-17)
    • 5.7kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2022
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1
  • Functional safety quality-managed
  • Junction temperature range –40 to +150°C
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Surge immunity up to 10kV
  • Isolation barrier life >40 years
  • 4A peak source, 6A peak sink output
  • 3V to 18V input VCCI range to interface with both digital and analog controllers
  • Up to 25V VDD output drive supply
    • 5V and 8V VDD UVLO options
  • Programmable overlap and dead time
  • Fast disable for power sequencing
  • Safety-related certifications:
    • 8000VPK reinforced Isolation per DIN EN IEC 60747-17 (VDE 0884-17)
    • 5.7kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2022

The UCC21520-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500VDC.

Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously , and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low.

Each device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC21520-Q1 enables high efficiency, high power density, and robustness.

The UCC21520-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500VDC.

Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously , and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low.

Each device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC21520-Q1 enables high efficiency, high power density, and robustness.

下載 觀看有字幕稿的影片 影片

索取更多資訊

提供 UCC21520-Q1 安全手冊和功能安全 FIT 率報告。立即索取

您可能會感興趣的類似產品

open-in-new 比較替代產品
功能相同,但針腳輸出與所比較的裝置不同。
UCC21540-Q1 現行 具有停用功能、可編程失效時間的車用增強型 4A/6A 雙通道隔離式閘極驅動器 Increased output channel-to-channel spacing; lower VDD range

技術文件

找不到結果。請清除您的搜尋條件,然後再試一次。
檢視所有 17
重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 UCC21520-Q1 4A, 6A, 5.7kVRMS Isolated Dual-Channel Gate Driver for Automotive datasheet (Rev. E) PDF | HTML 2024/6/17
* 使用指南 Gate Drive Voltage vs. Efficiency 2019/4/25
證書 VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. AB) 2026/7/15
證書 UL Certification E181974 Vol 4. Sec 7 (Rev. D) 2025/9/8
應用說明 Impact of Narrow Pulse Widths in Gate Driver Circuits (Rev. A) PDF | HTML 2024/1/25
證書 UCC215xx CQC Certificate of Product Certification PDF | HTML 2023/8/17
證書 UCC21520 CQC Certificate of Product Certification (Rev. A) PDF | HTML 2023/8/16
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021/12/16
更多文件說明 Protecting Power Devices in Electric Vehicle Applications 2021/3/23
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/2/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/2/28
證書 CSA Product Certificate (Rev. A) 2019/8/15
白皮書 Driving the future of HEV/EV with high-voltage solutions (Rev. B) 2018/5/16
Application brief Reducing Switching Losses in On-Board Chargers for Electric Vehicles 2018/3/27
白皮書 Cities grow smarter through innovative semiconductor technologies 2017/7/7
白皮書 Charging stations: Toward an EV support infrastructure 2017/5/9
應用說明 UCC21520, a Universal Isolated Gate Driver with Fast Dynamic Response (Rev. A) PDF | HTML 2016/7/5

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

UCC21520EVM-286 — UCC21520 4A/6A 隔離式雙通道閘極驅動器評估模組

UCC21520EVM-286 專為評估 UCC21520DW 而設計,這是一款具備 4 A 源極和 6-A 汲極峰值電流能力的隔離式雙通道閘極驅動器。此 EVM 可做為驅動功率 MOSFETS、IGBTS 和 SiC MOSFETS 的參考設計,並提供 UCC21520 針腳功能識別、元件選擇指南與 PCB 配置範例。

使用指南: PDF | HTML
支援產品和硬體
有庫存
限制:
??asset.out-of-stock-ti_zh_TW??
無法提供
模擬型號

UCC21520 PSpice Transient Model

SLUM544.ZIP (59 KB) - PSpice 模型
支援產品和硬體
模擬型號

UCC21520 TINA-TI Reference Design

SLUM552.TSC (168 KB) - TINA-TI 參考設計
支援產品和硬體
模擬型號

UCC21520 TINA-TI Transient Spice Model

SLUM551.ZIP (23 KB) - TINA-TI Spice 模型
支援產品和硬體
模擬型號

UCC21520 Unencrypted PSpice Transient Model

SLUM543.ZIP (3 KB) - PSpice 模型
支援產品和硬體
參考設計

TIDA-01604 — 適用於 HEV/EV 車載充電器的 98.6% 效率、6.6-kW 圖騰柱 PFC 參考設計

此參考設計的運作基礎為碳化矽 (SiC) MOSFET,而這些 MOSFET 由 C2000 微控制器 (MCU) 透過 SiC 隔離式閘極驅動器進行驅動。此設計採用三相交錯技術,並以連續傳導模式 (CCM) 運作,可在 240-V 輸入電壓和 6.6-kW 全功率下實現 98.46% 的效率。C2000 控制器可實現切相及適應性失效時間控制,以改善輕負載下的功率因數。閘極驅動器電路板(請參閱 TIDA-01605)可提供 4-A 源極與 6-A 汲極峰值電流。閘極驅動器電路板採用強化型隔離,可承受超過 100-V/ns 的共模暫態抗擾度 (...)
支援產品和硬體
封裝 針腳 CAD 符號、佔位空間與 3D 模型
SOIC (DW) 16 Ultra Librarian

訂購與品質

建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

內容係由 TI 和社群貢獻者依「現狀」提供,且不構成 TI 規範。檢視使用條款

若有關於品質、封裝或訂購 TI 產品的問題,請參閱 TI 支援。​​​​​​​​​​​​​​

影片