首頁 馬達驅動器 無刷 DC (BLDC) 馬達驅動器 BLDC 驅動器
首頁
馬達驅動器
無刷 DC (BLDC) 馬達驅動器
BLDC 驅動器

DRV8334

現行

具有準確電流感測功能的 60-V 1000-mA 至 2000-mA 3 相閘極驅動器

立即訂購
產品規格表

DRV8334

現行
產品規格表 立即訂購

產品詳細資料

Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 125
Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 125
HTQFP (PHP) 48 81 mm² 9 x 9 VQFN (RGZ) 48 49 mm² 7 x 7
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 4.5 to 60V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external protection circuits
  • Smart Gate Drive architecture
    • 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Three-step dynamic drive current control
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • Sub-1mV low input offset across temperature
    • 9-level adjustable gain
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V, and 5V Logic Inputs
  • Integrated protection features
    • Battery and power supply voltage monitors
    • Phase feedback comparator
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 4.5 to 60V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external protection circuits
  • Smart Gate Drive architecture
    • 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Three-step dynamic drive current control
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • Sub-1mV low input offset across temperature
    • 9-level adjustable gain
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V, and 5V Logic Inputs
  • Integrated protection features
    • Battery and power supply voltage monitors
    • Phase feedback comparator
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin

The DRV8334 is an integrated smart gate driver for three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.8mA up to 1A source and 2A sink. The DRV8334 can operate from a single power supply with a wide input range of 4.5 to 60V. A trickle charge pump enables 100% PWM duty cycle control, and provides overdrive supply voltage for external switches.

The DRV8334 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.

A wide range of diagnostics and protection features integrated in the DRV8334 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

The DRV8334 is an integrated smart gate driver for three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.8mA up to 1A source and 2A sink. The DRV8334 can operate from a single power supply with a wide input range of 4.5 to 60V. A trickle charge pump enables 100% PWM duty cycle control, and provides overdrive supply voltage for external switches.

The DRV8334 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.

A wide range of diagnostics and protection features integrated in the DRV8334 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.
filter 尋找其它 BLDC 驅動器
下載 觀看有字幕稿的影片 影片

技術文件

star =TI 所選的此產品重要文件
找不到結果。請清除您的搜尋條件，然後再試一次。
檢視所有 2
類型 標題 日期
* Data sheet DRV8334 Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring datasheet (Rev. B) PDF | HTML 2025年 9月 9日
Application brief DRV8334 Gate Drive Features and Benefits PDF | HTML 2025年 8月 5日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

DRV8334EVM — 適用於 3 相閘極驅動器的 DRV8334 評估模組

DRV8334 評估模組 (EVM) 是以適用於 BLDC 馬達之 DRV8334 閘極驅動器為基礎的 30-A 3 相無刷 DC 驅動平台。此 EVM 可快速評估 DRV8334 產品，其會利用梯形整流和控制轉動 BLDC 馬達。所有電源供應器的狀態 LED 及故障 LED 均包含在內，以供使用者回饋。需要 C2000™ LaunchPad™ 開發套件 (LAUNCHXL-F280049C)，以用於控制 DRV8334 以及監控和通報故障。
使用指南: PDF | HTML
TI.com 無法提供
開發模組 (EVM) 的 GUI

DRV8334EVM-SENSORED-TRAPEZOIDAL-GUI — DRV8334EVM GUI to support sensored trapezoidal motor control

DRV8334EVM GUI to support sensored trapezoidal motor control
支援產品和硬體

支援產品和硬體

產品
BLDC 驅動器
DRV8334 — 具有準確電流感測功能的 60-V 1000-mA 至 2000-mA 3 相閘極驅動器
啟動
計算工具

BLDC-MAX-QG-MOSFET-CALCULATOR — Calculate the maximum QG MOSFET for your motor driver

Calculate the maximum QG MOSFET that can be driven based on the PWM switching frequency, algorithm type, and additional external capacitance.
支援產品和硬體

支援產品和硬體

產品
BLDC 驅動器
DRV8320 — 65 V 最大 3 相智慧型閘極驅動器 DRV8320R — 具降壓穩壓器的 65-V 最大 3 相智慧型閘極驅動器 DRV8323 — 具電流分流放大器的 65-V 最大 3 相智慧型閘極驅動器 DRV8323R — 具降壓穩壓器和電流分流放大器的 65V 最大 3 相位智慧型閘極驅動器 DRV8329 — 具有單電流感測放大器的 60V 3 相閘極驅動器 DRV8329-Q1 — 具有單電流感測放大器的車用 60V 3 相閘極驅動器 DRV8334 — 具有準確電流感測功能的 60-V 1000-mA 至 2000-mA 3 相閘極驅動器 DRV8340-Q1 — 車用 12-V 至 24-V 電池 3 相智慧型閘極驅動器 DRV8343-Q1 — 具有電流分流放大器的車用 12-V 至 24-V 電池 3 相智慧型閘極驅動器 DRV8350 — 102V 最大三相智慧型閘極驅動器 DRV8350F — 102V 最大 3 相位功能安全品質管理智慧型閘極驅動器 DRV8350R — 具降壓穩壓器的 102-V 最大 3 相智慧型閘極驅動器 DRV8353 — 具電流分流放大器的 102-V 最大 3 相智慧型閘極驅動器 DRV8353F — 具有 3x CSA 的 102V 最大 3 相位功能安全品質管理智慧型閘極驅動器 DRV8353M — 具有電流分流放大器和廣泛溫度的 102-V 最大 3 相智慧型閘極驅動器 DRV8353R — 具降壓穩壓器和電流分流放大器的 102-V 最大 3 相智慧型閘極驅動器
下載
計算工具

DRV8334-SMART-GATE-DRIVE-REGISTER-SETTINGS-CALC — Calculator to provide recommended smart gate drive register settings for the DRV8334

This calculator provides initial recommendations for smart gate drive register configurations for the DRV8334 based on user inputs.
支援產品和硬體

支援產品和硬體

產品
BLDC 驅動器
DRV8334 — 具有準確電流感測功能的 60-V 1000-mA 至 2000-mA 3 相閘極驅動器 DRV8334-Q1 — 具有準確電流感測的車用 12V 和 24V 電池 3 相閘極驅動器單元
下載
封裝 針腳 CAD 符號、佔位空間與 3D 模型
HTQFP (PHP) 48 Ultra Librarian
VQFN (RGZ) 48 Ultra Librarian
適用 TI 的評估品項標準條款與條件。

訂購與品質

內含資訊：
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊：
  • 晶圓廠位置
  • 組裝地點

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

以英文檢視所有論壇主題

內容係由 TI 和社群貢獻者依「現狀」提供，且不構成 TI 規範。檢視使用條款。

若有關於品質、封裝或訂購 TI 產品的問題，請參閱 TI 支援。​​​​​​​​​​​​​​

影片