產品詳細資料

Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 150 TI functional safety category Functional Safety-Compliant
Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 150 TI functional safety category Functional Safety-Compliant
HTQFP (PHP) 48 81 mm² 9 x 9 VQFN (RGZ) 48 49 mm² 7 x 7
  • AEC-Q100 qualified for automotive applications. Temperature options:
    • DRV8334EPHP: –40°C to +150°C, TA
    • DRV8334QPHP: –40°C to +125°C,TA
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 4.5 to 60V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external protection circuits
  • Smart Gate Drive architecture
    • 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Three-step dynamic drive current control
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • Sub-1mV low input offset across temperature
    • 9-level adjustable gain
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V, and 5V Logic Inputs
  • Optional programmable OTP for reset settings
  • Integrated protection features
    • Battery and power supply voltage monitors
    • Phase feedback comparator
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin
  • AEC-Q100 qualified for automotive applications. Temperature options:
    • DRV8334EPHP: –40°C to +150°C, TA
    • DRV8334QPHP: –40°C to +125°C,TA
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 4.5 to 60V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external protection circuits
  • Smart Gate Drive architecture
    • 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Three-step dynamic drive current control
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • Sub-1mV low input offset across temperature
    • 9-level adjustable gain
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V, and 5V Logic Inputs
  • Optional programmable OTP for reset settings
  • Integrated protection features
    • Battery and power supply voltage monitors
    • Phase feedback comparator
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin

The DRV8334-Q1 is an integrated smart gate driver for 12V and 24V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334-Q1 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.8mA up to 1A source and 2A sink. The DRV8334-Q1 can operate from a single power supply with a wide input range of 4.5 to 60V. A trickle charge pump enables 100% PWM duty cycle control, and provides overdrive supply voltage for external switches.

The DRV8334-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.

A wide range of diagnostics and protection features integrated in the DRV8334-Q1 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

The DRV8334-Q1 is an integrated smart gate driver for 12V and 24V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334-Q1 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.8mA up to 1A source and 2A sink. The DRV8334-Q1 can operate from a single power supply with a wide input range of 4.5 to 60V. A trickle charge pump enables 100% PWM duty cycle control, and provides overdrive supply voltage for external switches.

The DRV8334-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.

A wide range of diagnostics and protection features integrated in the DRV8334-Q1 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

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類型 標題 日期
* Data sheet DRV8334-Q1 Automotive 24/12V Battery 3-Phase Gate Driver Unit with accurate current sensing and enhanced diagnostics datasheet PDF | HTML 2023年 5月 17日
Application brief Understanding Gate Driver Slew Rate Control, MOSFET Switching Optimization and Protection Features (Rev. A) PDF | HTML 2025年 12月 11日

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開發板

DRV8334EVM — 適用於 3 相閘極驅動器的 DRV8334 評估模組

DRV8334 評估模組 (EVM) 是以適用於 BLDC 馬達之 DRV8334 閘極驅動器為基礎的 30-A 3 相無刷 DC 驅動平台。此 EVM 可快速評估 DRV8334 產品,其會利用梯形整流和控制轉動 BLDC 馬達。所有電源供應器的狀態 LED 及故障 LED 均包含在內,以供使用者回饋。需要 C2000™ LaunchPad™ 開發套件 (LAUNCHXL-F280049C),以用於控制 DRV8334 以及監控和通報故障。
使用指南: PDF | HTML
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計算工具

DRV8334-SMART-GATE-DRIVE-REGISTER-SETTINGS-CALC Calculator to provide recommended smart gate drive register settings for the DRV8334

This calculator provides initial recommendations for smart gate drive register configurations for the DRV8334 based on user inputs.
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產品
BLDC 驅動器
DRV8334 具有準確電流感測功能的 60-V 1000-mA 至 2000-mA 3 相閘極驅動器 DRV8334-Q1 具有準確電流感測的車用 12V 和 24V 電池 3 相閘極驅動器單元
封裝 針腳 CAD 符號、佔位空間與 3D 模型
HTQFP (PHP) 48 Ultra Librarian
VQFN (RGZ) 48 Ultra Librarian

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