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UCC23525

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Reinforced, 5A/5A single-channel opto-compatible isolated gate driver

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数据表

UCC23525

正在供货
数据表 立即订购

产品详情

Number of channels 1 Isolation rating Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1063 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 5 Peak output current (source) (typ) (A) 5 Peak output current (sink) (typ) (A) 5 Features High CMTI, Opto-compatible input Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 30 Input threshold 4 mA Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 1500 Fall time (ns) 25 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1063 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 5 Peak output current (source) (typ) (A) 5 Peak output current (sink) (typ) (A) 5 Features High CMTI, Opto-compatible input Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 30 Input threshold 4 mA Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 1500 Fall time (ns) 25 Undervoltage lockout (typ) (V) 12
SOIC (DWY) 6 53.82 mm² (4.68 mm × 11.5 mm)
  • 5kVRMS single channel isolated gate driver with opto-compatible input
  • Pin-to-pin replacement for opto isolated gate drivers
  • 5A source / 5A sink, peak output current
  • Maximum 36V output driver supply voltage
  • 12V VDD undervoltage lockout
  • Rail-to-rail output
  • 100ns (maximum) propagation delay
  • 25ns (maximum) part-to-part delay matching
  • 30ns (maximum) pulse width distortion
  • 200kV/µs (minimum) common-mode transient immunity (CMTI)
  • Isolation barrier life >50 Years
  • Stretched SO-6 package with >8.5mm creepage and clearance
  • Operating junction temperature, TJ: –40°C to +150°C
  • 5kVRMS single channel isolated gate driver with opto-compatible input
  • Pin-to-pin replacement for opto isolated gate drivers
  • 5A source / 5A sink, peak output current
  • Maximum 36V output driver supply voltage
  • 12V VDD undervoltage lockout
  • Rail-to-rail output
  • 100ns (maximum) propagation delay
  • 25ns (maximum) part-to-part delay matching
  • 30ns (maximum) pulse width distortion
  • 200kV/µs (minimum) common-mode transient immunity (CMTI)
  • Isolation barrier life >50 Years
  • Stretched SO-6 package with >8.5mm creepage and clearance
  • Operating junction temperature, TJ: –40°C to +150°C

The UCC23525 driver is an opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 5A source and 5A sink peak output current and 5kVRMSreinforced isolation rating. The high supply voltage range of 30V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. The UCC23525 can drive both low-side and high-side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design.

Performance highlights include high common-mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs found in optocoupler gate drivers. The UCC23525 is offered in a stretched SO-6 package, supporting 5KVRMS reinforced isolation rating. The stretched SO-6 package has >8.5mm creepage and clearance, and a mold compound from material group I which has a comparative tracking index (CTI) >600V.

The high performance and reliability of the UCC23525 makes the device ideal for use in all types of motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional optocouplers.

The UCC23525 driver is an opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 5A source and 5A sink peak output current and 5kVRMSreinforced isolation rating. The high supply voltage range of 30V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. The UCC23525 can drive both low-side and high-side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design.

Performance highlights include high common-mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs found in optocoupler gate drivers. The UCC23525 is offered in a stretched SO-6 package, supporting 5KVRMS reinforced isolation rating. The stretched SO-6 package has >8.5mm creepage and clearance, and a mold compound from material group I which has a comparative tracking index (CTI) >600V.

The high performance and reliability of the UCC23525 makes the device ideal for use in all types of motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional optocouplers.
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顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 UCC23525 5A Source, 5A Sink, 5 kVRMS Reinforced, Opto-Compatible, Single-Channel Isolated Gate Driver 数据表 (Rev. B) PDF | HTML 2025-6-12
证书 FPPT2 - Nonoptical Isolating Devices UL 1577 Certificate of Compliance. 2025-5-19

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UCC23513EVM-014 — 具有光兼容输入的 UCC23513 3A 5kVrms 单通道隔离式栅极驱动器 EVM

UCC23513EVM-014 评估模块用于评估 TI 的 UCC23513，这是具有光兼容输入的 5kVRMS 隔离式单通道栅极驱动器。输入为电流驱动，需要 7mA 和 16 mA 之间的电流才能实现器件导通，并且可通过反向偏置来实现关断。该器件可提供 4A 峰值拉电流和 5A 峰值灌电流输出电流，以驱动 Si MOSFET、IGBT 和 WBG 器件（即 SiC 和 GaN 晶体管）。
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