LP2998-Q1

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用于汽车应用的 DDR 终端稳压器

产品详情

Product type DDR Vin (min) (V) 1.35 Vin (max) (V) 5.5 Vout (min) (V) 0.656 Vout (max) (V) 0.698 Features Shutdown Pin for S3 Rating Automotive Operating temperature range (°C) -40 to 125 Iq (typ) (mA) 0.32 DDR memory type DDR, DDR2, DDR3, DDR3L
Product type DDR Vin (min) (V) 1.35 Vin (max) (V) 5.5 Vout (min) (V) 0.656 Vout (max) (V) 0.698 Features Shutdown Pin for S3 Rating Automotive Operating temperature range (°C) -40 to 125 Iq (typ) (mA) 0.32 DDR memory type DDR, DDR2, DDR3, DDR3L
HSOIC (DDA) 8 29.4 mm² (4.9 mm × 6 mm)
  • AEC-Q100 Test Guidance with the following results
    (SO PowerPAD-8):
    • Device HBM ESD Classification Level H1C
    • Junction Temperature Range –40°C to 125°C
  • 1.35 V Minimum VDDQ
  • Source and Sink Current
  • Low Output Voltage Offset
  • No External Resistors Required
  • Linear Topology
  • Suspend to Ram (STR) Functionality
  • Low External Component Count
  • Thermal Shutdown
  • AEC-Q100 Test Guidance with the following results
    (SO PowerPAD-8):
    • Device HBM ESD Classification Level H1C
    • Junction Temperature Range –40°C to 125°C
  • 1.35 V Minimum VDDQ
  • Source and Sink Current
  • Low Output Voltage Offset
  • No External Resistors Required
  • Linear Topology
  • Suspend to Ram (STR) Functionality
  • Low External Component Count
  • Thermal Shutdown

The LP2998 linear regulator is designed to meet JEDEC SSTL-2 and JEDEC SSTL-18 specifications for termination of DDR-SDRAM and DDR2 memory. The device also supports DDR3 and DDR3L VTT bus termination with VDDQ min of 1.35 V. The device contains a high-speed operational amplifier to provide excellent response to load transients. The output stage prevents shoot through while delivering 1.5 A continuous current and transient peaks up to 3 A in the application as required for DDR-SDRAM termination. The LP2998 also incorporates a VSENSE pin to provide superior load regulation and a VREF output as a reference for the chipset and DIMMs.

An additional feature found on the LP2998 is an active low shutdown (SD) pin that provides Suspend To RAM (STR) functionality. When SD is pulled low the VTT output will tri-state providing a high impedance output, but, VREF will remain active. A power savings advantage can be obtained in this mode through lower quiescent current.

The LP2998 linear regulator is designed to meet JEDEC SSTL-2 and JEDEC SSTL-18 specifications for termination of DDR-SDRAM and DDR2 memory. The device also supports DDR3 and DDR3L VTT bus termination with VDDQ min of 1.35 V. The device contains a high-speed operational amplifier to provide excellent response to load transients. The output stage prevents shoot through while delivering 1.5 A continuous current and transient peaks up to 3 A in the application as required for DDR-SDRAM termination. The LP2998 also incorporates a VSENSE pin to provide superior load regulation and a VREF output as a reference for the chipset and DIMMs.

An additional feature found on the LP2998 is an active low shutdown (SD) pin that provides Suspend To RAM (STR) functionality. When SD is pulled low the VTT output will tri-state providing a high impedance output, but, VREF will remain active. A power savings advantage can be obtained in this mode through lower quiescent current.

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* 数据表 LP2998/LP2998-Q1 DDR Termination Regulator 数据表 (Rev. K) PDF | HTML 2014-8-20

设计与开发

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评估板

LP2998EVAL — 用于 LP2998 的评估板

The LP2998 evaluation board is designed to provide the design Engineer with a fully functional prototype system in which to evaluate the LP2998 in both a static environment and with a complete memory system.

用户指南: PDF
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参考设计

TIDA-00275 — 汽车仪表组宽 Vin 电源设计

此 TI 参考设计是一种汽车仪表组宽 Vin 电源解决方案,包含一个带有集成 LDO 的宽 Vin 降压转换器。   还包含一个高效同步降压直流到直流转换器。另外还包含一个线性稳压器,旨在使 DDR 终端符合 JEDEC SSTL-2 和 JEDEC SSTL-18 规范。此仪表组电源解决方案已针对中端仪表组市场进行优化,整个解决方案支持 6.0V-40V 系统功能,可承受启动停止和负载突降情况。前端降压转换器 (TPS65320-Q1) 能够支持 4.5V 冷启动情况。

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封装 引脚 CAD 符号、封装和 3D 模型
HSOIC (DDA) 8 Ultra Librarian

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