LMV342-N

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双路、5.5V、1MHz、高输出电流 (75mA) 运算放大器

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TLV9002 正在供货 适用于成本优化型应用的双路、5.5V、1MHz、RRIO 运算放大器 Better accuracy (1.6mV Vos max), lower power (0.06mA Iq), rail-to-rail inputs and outputs, smaller packages

产品详情

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.7 Rail-to-rail In to V-, Out GBW (typ) (MHz) 1 Slew rate (typ) (V/µs) 1 Vos (offset voltage at 25°C) (max) (mV) 5 Iq per channel (typ) (mA) 0.107 Vn at 1 kHz (typ) (nV√Hz) 39 Rating Catalog Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 1.9 Input bias current (max) (pA) 200 CMRR (typ) (dB) 86 Iout (typ) (A) 0.075 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0.007 Output swing headroom (to positive supply) (typ) (V) -0.007
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.7 Rail-to-rail In to V-, Out GBW (typ) (MHz) 1 Slew rate (typ) (V/µs) 1 Vos (offset voltage at 25°C) (max) (mV) 5 Iq per channel (typ) (mA) 0.107 Vn at 1 kHz (typ) (nV√Hz) 39 Rating Catalog Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 1.9 Input bias current (max) (pA) 200 CMRR (typ) (dB) 86 Iout (typ) (A) 0.075 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0.007 Output swing headroom (to positive supply) (typ) (V) -0.007
VSSOP (DGK) 8 14.7 mm² (3 mm × 4.9 mm) SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Typical 2.7 V Supply Values (Unless Otherwise
    Noted)
  • Ensured 2.7 V and 5 V Specifications
  • Input Referred Voltage Noise at 10 kHz:
    29 nV/√Hz
  • Supply Current (Per Amplifier): 100 µA
  • Gain Bandwidth Product: 1 MHz
  • Slew Rate: 1 V/µs
  • Shutdown Current (LMV341-N): 45 pA
  • Turnon Time From Shutdown (LMV341-N): 5 µs
  • Input Bias Current: 20 fA
  • Typical 2.7 V Supply Values (Unless Otherwise
    Noted)
  • Ensured 2.7 V and 5 V Specifications
  • Input Referred Voltage Noise at 10 kHz:
    29 nV/√Hz
  • Supply Current (Per Amplifier): 100 µA
  • Gain Bandwidth Product: 1 MHz
  • Slew Rate: 1 V/µs
  • Shutdown Current (LMV341-N): 45 pA
  • Turnon Time From Shutdown (LMV341-N): 5 µs
  • Input Bias Current: 20 fA

The LMV34x-N devices are single, dual, and quad low-voltage, low-power operational amplifiers. They are designed specifically for low-voltage portable applications. Other important product characteristics are low input bias current, rail-to-rail output, and wide temperature range.

The patented class AB turnaround stage significantly reduces the noise at higher frequencies, power consumption, and offset voltage. The PMOS input stage provides the user with ultra-low input bias current of 20 fA (typical) and high input impedance.

The industrial-plus temperature range of –40°C to 125°C allows the LMV34x-N to accommodate a broad range of extended environment applications. LMV341-N expands Texas Instrument’s Silicon Dust amplifier portfolio offering enhancements in size, speed, and power savings. The LMV34x-N devices are specified to operate over the voltage range of 2.7 V to 5.5 V and all have rail-to-rail output.

The LMV341-N offers a shutdown pin that can be used to disable the device. Once in shutdown mode, the supply current is reduced to 45 pA (typical). The LMV34x-N devices have 29-nV voltage noise at 10 KHz, 1 MHz GBW, 1-V/µs slew rate, 0.25 mVos, and 0.1-µA shutdown current (LMV341-N).

The LMV341-N is offered in the tiny 6-pin SC70 package, the LMV342-N in space-saving 8-pin VSSOP and SOIC packages, and the LMV344-N in 14-pin TSSOP and SOIC packages. These small package amplifiers offer an ideal solution for applications requiring minimum PCB footprint. Applications with area constrained PCB requirements include portable electronics such as cellular handsets and PDAs.

The LMV34x-N devices are single, dual, and quad low-voltage, low-power operational amplifiers. They are designed specifically for low-voltage portable applications. Other important product characteristics are low input bias current, rail-to-rail output, and wide temperature range.

The patented class AB turnaround stage significantly reduces the noise at higher frequencies, power consumption, and offset voltage. The PMOS input stage provides the user with ultra-low input bias current of 20 fA (typical) and high input impedance.

The industrial-plus temperature range of –40°C to 125°C allows the LMV34x-N to accommodate a broad range of extended environment applications. LMV341-N expands Texas Instrument’s Silicon Dust amplifier portfolio offering enhancements in size, speed, and power savings. The LMV34x-N devices are specified to operate over the voltage range of 2.7 V to 5.5 V and all have rail-to-rail output.

The LMV341-N offers a shutdown pin that can be used to disable the device. Once in shutdown mode, the supply current is reduced to 45 pA (typical). The LMV34x-N devices have 29-nV voltage noise at 10 KHz, 1 MHz GBW, 1-V/µs slew rate, 0.25 mVos, and 0.1-µA shutdown current (LMV341-N).

The LMV341-N is offered in the tiny 6-pin SC70 package, the LMV342-N in space-saving 8-pin VSSOP and SOIC packages, and the LMV344-N in 14-pin TSSOP and SOIC packages. These small package amplifiers offer an ideal solution for applications requiring minimum PCB footprint. Applications with area constrained PCB requirements include portable electronics such as cellular handsets and PDAs.

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顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 LMV34x-N Single Rain-to-Rail Output CMOS Operation Amplifier With Shutdown 数据表 (Rev. H) PDF | HTML 2016-6-30
电子书 The Signal e-book: 有关运算放大器设计主题的博客文章汇编 PDF | HTML 英语版 PDF | HTML 2018-1-31

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用户指南: PDF
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仿真模型

LMV341-N PSPICE Model (Rev. A)

SNOM075A.ZIP (2 KB) - PSpice 模型
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封装 引脚 CAD 符号、封装和 3D 模型
VSSOP (DGK) 8 Ultra Librarian
SOIC (D) 8 Ultra Librarian

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