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LF356-MIL

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军用级、单路、30V、5MHz、FET 输入运算放大器

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数据表

LF356-MIL

正在供货
数据表 立即订购

产品详情

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail In to V+ GBW (typ) (MHz) 5 Slew rate (typ) (V/µs) 12 Vos (offset voltage at 25°C) (max) (mV) 2 Iq per channel (typ) (mA) 5 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Military Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 3 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail In to V+ GBW (typ) (MHz) 5 Slew rate (typ) (V/µs) 12 Vos (offset voltage at 25°C) (max) (mV) 2 Iq per channel (typ) (mA) 5 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Military Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 3 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET
TO-CAN (LMC) 8 80.2816 mm² (8.96 mm × 8.96 mm) WAFERSALE (YS) — See data sheet
  • Advantages
    • Replace Expensive Hybrid and Module FET Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices
    • Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
    • New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
    • Internal Compensation and Large Differential Input Voltage Capability
  • Common Features
    • Low Input Bias Current: 30 pA
    • Low Input Offset Current: 3 pA
    • High Input Impedance: 1012 Ω
    • Low Input Noise Current: 0.01 pA/√Hz
    • High Common-Mode Rejection Ratio: 100 dB
    • Large DC Voltage Gain: 106 dB
  • Uncommon Features
    • Extremely Fast Settling Time to 0.01%: 1.5 µs
    • Fast Slew Rate: 12 V/µs
    • Wide Gain Bandwidth: 5 MHz
    • Low Input Noise Voltage: 12 nV/√Hz
  • Advantages
    • Replace Expensive Hybrid and Module FET Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices
    • Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
    • New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
    • Internal Compensation and Large Differential Input Voltage Capability
  • Common Features
    • Low Input Bias Current: 30 pA
    • Low Input Offset Current: 3 pA
    • High Input Impedance: 1012 Ω
    • Low Input Noise Current: 0.01 pA/√Hz
    • High Common-Mode Rejection Ratio: 100 dB
    • Large DC Voltage Gain: 106 dB
  • Uncommon Features
    • Extremely Fast Settling Time to 0.01%: 1.5 µs
    • Fast Slew Rate: 12 V/µs
    • Wide Gain Bandwidth: 5 MHz
    • Low Input Noise Voltage: 12 nV/√Hz

The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
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技术文档

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顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 LF356-MIL JFET Input Operational Amplifier 数据表 PDF | HTML 2017-6-21
电子书 The Signal e-book: 有关运算放大器设计主题的博客文章汇编 PDF | HTML 英语版 PDF | HTML 2018-1-31
应用手册 AN-311 Theory and Applications of Logarithmic Amplifiers (Rev. B) 2013-4-23
应用手册 Applications of the LM3524 Pulse Width Modulator (Rev. B) 2013-4-23
应用手册 AN-272 Op Amp Booster Designs (Rev. B) 2013-4-23
应用手册 Effect of Heavy Loads on Accuracy and Linearity of Op Amp Circuits (Rev. B) 2013-4-22
应用手册 AN-263 Sine Wave Generation Techniques (Rev. C) 2013-4-22
应用手册 AN-480 A 40 MHz Programmable Video Op Amp 2004-5-11
应用手册 Data Acq Using ADC0816 & ADC0817 8-Bit ADC w/On-Chip 16 Chan Multiplexr 2004-5-10
应用手册 AN-293 Control Applications of CMOS DACs 2004-5-10
应用手册 AN-447 Protection Schemes for BI-FET Amplifiers and Switches 2004-5-2
应用手册 AN-253 LH0024 and LH0032 High Speed Op Amp Applications 2004-5-2
应用手册 AN-275 CMOS D/A Converters Match Most Microprocessors 2004-5-2
应用手册 Get Fast Stable Response From Improved Unity-Gain Followers 2002-10-2

设计与开发

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仿真模型

LF356 PSPICE Model

SNOM255.ZIP (1 KB) - PSpice 模型
支持的产品和硬件
封装 引脚 CAD 符号、封装和 3D 模型
TO-CAN (LMC) 8 Ultra Librarian
WAFERSALE (YS) — Ultra Librarian
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