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TPSI2240-Q1

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Verstärkt isolierter Schalter für die Automobilindustrie mit Avalanche-Schutz, 1200 V, 50 mA

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TPSI2240-Q1

AKTIV
Datenblatt Jetzt bestellen

Produktdetails

FET Internal Number of channels 1 Supply voltage (max) (V) 20 Supply voltage (min) (V) 4.5 Rating Automotive Withstand isolation voltage (VISO) (Vrms) 4750 Features 0.6mA avalanche current, 1mA avalanche current, Capacitive isolation Imax (mA) 50 Ron (typ) (Ω) 130 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 3.5 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000 Working isolation voltage (VIOWM) (Vrms) 1000
FET Internal Number of channels 1 Supply voltage (max) (V) 20 Supply voltage (min) (V) 4.5 Rating Automotive Withstand isolation voltage (VISO) (Vrms) 4750 Features 0.6mA avalanche current, 1mA avalanche current, Capacitive isolation Imax (mA) 50 Ron (typ) (Ω) 130 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 3.5 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000 Working isolation voltage (VIOWM) (Vrms) 1000
SOIC (DWQ) 11 106.09 mm² 10.3 x 10.3
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C TA
  • Low EMI:
    • Meets CISPR25 class 5 performance with no additional components
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • TPSI2240-Q1 IAVA = 1mA for 60s pulses

      • TPSI2240C-Q1 IAVA = 0.6mA for 60s pulses

      • TPSI2240T-Q1 IAVA = 3mA for 60s pulses
    • 1200V standoff voltage
    • RON = 130Ω (TJ = 25°C)
    • TON, TOFF < 700µs
    • IOFF = 1.22µA at 1000V (TJ = 105°C)
  • Low primary side supply current
    • 3.5µA OFF state current (TJ = 25°C)
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 30 year projected lifetime at 1500VRMS / 2120VDC working voltage
    • Reinforced Isolation rating, VISO, up to 4750VRMS
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8mm (primary-secondary)
    • Creepage and clearance ≥ 6mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
    • (Planned) UL 1577 component recognition program
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C TA
  • Low EMI:
    • Meets CISPR25 class 5 performance with no additional components
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • TPSI2240-Q1 IAVA = 1mA for 60s pulses

      • TPSI2240C-Q1 IAVA = 0.6mA for 60s pulses

      • TPSI2240T-Q1 IAVA = 3mA for 60s pulses
    • 1200V standoff voltage
    • RON = 130Ω (TJ = 25°C)
    • TON, TOFF < 700µs
    • IOFF = 1.22µA at 1000V (TJ = 105°C)
  • Low primary side supply current
    • 3.5µA OFF state current (TJ = 25°C)
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 30 year projected lifetime at 1500VRMS / 2120VDC working voltage
    • Reinforced Isolation rating, VISO, up to 4750VRMS
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8mm (primary-secondary)
    • Creepage and clearance ≥ 6mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
    • (Planned) UL 1577 component recognition program

The TPSI2240-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2240-Q1 uses TI’s high reliability capacitive reinforced isolation technology in combination with internal back-to-back MOSFETs to form an integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5V – 20V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1V – 20V. In other applications, the VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2240-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2kV from S1 to S2. The TPSI2240-Q1 MOSFET’s avalanche robustness and thermally conscious package design, allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA (0.6mA for TPSI2240C-Q1 and 3mA for TPSI2240T-Q1) without requiring any external components.

The TPSI2240-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2240-Q1 uses TI’s high reliability capacitive reinforced isolation technology in combination with internal back-to-back MOSFETs to form an integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5V – 20V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1V – 20V. In other applications, the VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2240-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2kV from S1 to S2. The TPSI2240-Q1 MOSFET’s avalanche robustness and thermally conscious package design, allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA (0.6mA for TPSI2240C-Q1 and 3mA for TPSI2240T-Q1) without requiring any external components.
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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Datum
* Data sheet TPSI2240-Q1 1200V, 50mA, Automotive Reinforced Solid-State Relay With Avalanche Protection datasheet (Rev. A) PDF | HTML 12 Dez 2025
Application note Design of Insulation Monitoring Device (IMD) in On-board Charger System With Active Single-Switch Architecture PDF | HTML 30 Jan 2026
Functional safety information TPSI2240-Q1, TPSI2240C-Q1, and TPSI2240T-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. A) PDF | HTML 26 Jan 2026
Application note Design Considerations for Large Y-Capacitor Resistive-Bridge DC Insulation Monitoring Device PDF | HTML 15 Jan 2026
Certificate TPSI2240Q1EVM EU Declaration of Conformity (DoC) 01 Jul 2025

Design und Entwicklung

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Berechnungstool

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