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UCG28828

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实现高达 120W 输出且具有集成 GaN 功率 FET 和 PFC 的高频 QR 反激式转换器

产品详情

Rating Catalog Topology Flyback Switch current limit (typ) (A) 3.5 Features Adjustable current limit, Auxless-sense, High-voltage startup, Integrated GaN FET, Over Current Protection, Over Temperature Protection, Over Voltage Protection, Self-bias, Short circuit protection, USB C/PD compatible, Under Voltage Protection, X-cap discharge EMI features Frequency Dithering, Switching slew rate control, Valley hopping Control mode Peak current mode Switching frequency (min) (kHz) 25 Switching frequency (max) (kHz) 500 Operating temperature range (°C) -40 to 105 Type Converter (Integrated Switch)
Rating Catalog Topology Flyback Switch current limit (typ) (A) 3.5 Features Adjustable current limit, Auxless-sense, High-voltage startup, Integrated GaN FET, Over Current Protection, Over Temperature Protection, Over Voltage Protection, Self-bias, Short circuit protection, USB C/PD compatible, Under Voltage Protection, X-cap discharge EMI features Frequency Dithering, Switching slew rate control, Valley hopping Control mode Peak current mode Switching frequency (min) (kHz) 25 Switching frequency (max) (kHz) 500 Operating temperature range (°C) -40 to 105 Type Converter (Integrated Switch)
VQFN (REZ) 12 25 mm² 5 x 5
  • Integrated 750V GaN HEMT
  • Dynamic QR/DCM/CCM modes of operation
  • High Power density: Up to 500kHz switching frequency
  • Enable low BoM cost by integration
    • Remove auxiliary winding with self bias
    • Integrated input and output voltage sensing
    • Integrated current sense
    • Integrated HV start-up
    • Integrated X-cap discharge
  • High efficiency and low EMI performance
    • Ultra-low standby power: <30mW
    • Frequency foldback and burst mode
    • Valley locking
    • Frequency dithering
    • Switching slew rate control
  • Comprehensive protection features
    • Overtemperature protection
    • Input and output overvoltage protection
    • Short-circuit protection
    • Cycle-by-cycle current limit
    • Two-level over power protection with LPS
    • Brownin and brownout protection
    • Open feedback protection
  • Flexible configurability through external resistors
    • X-cap discharge and CCM mode disable
    • Selectable switching slew rate
    • Multiple clamping frequency settings
    • Fault latch or auto-restart
    • Maximum and minimum peak current ratio
  • Integrated 750V GaN HEMT
  • Dynamic QR/DCM/CCM modes of operation
  • High Power density: Up to 500kHz switching frequency
  • Enable low BoM cost by integration
    • Remove auxiliary winding with self bias
    • Integrated input and output voltage sensing
    • Integrated current sense
    • Integrated HV start-up
    • Integrated X-cap discharge
  • High efficiency and low EMI performance
    • Ultra-low standby power: <30mW
    • Frequency foldback and burst mode
    • Valley locking
    • Frequency dithering
    • Switching slew rate control
  • Comprehensive protection features
    • Overtemperature protection
    • Input and output overvoltage protection
    • Short-circuit protection
    • Cycle-by-cycle current limit
    • Two-level over power protection with LPS
    • Brownin and brownout protection
    • Open feedback protection
  • Flexible configurability through external resistors
    • X-cap discharge and CCM mode disable
    • Selectable switching slew rate
    • Multiple clamping frequency settings
    • Fault latch or auto-restart
    • Maximum and minimum peak current ratio

UCG28836 is a high frequency, quasi-resonant flyback converter with a built-in 750V GaN high electron mobility transistor (HEMT) with low Rds(on) for AC to DC power conversion. The UCG28836 is designed for high power density applications, such as cell phone fast chargers and notebook adapters. The key feature of this device is the self-bias and auxless sensing scheme which eliminates the need of the auxiliary winding and simplifies the system design with higher efficiency.

The UCG28836 also features intelligent mode transition (CCM/QR/DCM) to enable high efficiency across wide power range and <30mW standby power consumption. In addition, UCG28836 includes a full list of protections such as brownin and brownout protection, SCP, OVP, OPP, LPS, OFB and OTP. The cycle-by-cycle current limit allows for fast response to the fault conditions to safeguard the system and improve the reliability. In a small 5mm × 5mm package, the UCG28836 has dedicated configuration pins to offer more flexibility. Only resistors are needed to tune certain parameters for each system, enabling a platform design with a single device.

UCG28836 is a high frequency, quasi-resonant flyback converter with a built-in 750V GaN high electron mobility transistor (HEMT) with low Rds(on) for AC to DC power conversion. The UCG28836 is designed for high power density applications, such as cell phone fast chargers and notebook adapters. The key feature of this device is the self-bias and auxless sensing scheme which eliminates the need of the auxiliary winding and simplifies the system design with higher efficiency.

The UCG28836 also features intelligent mode transition (CCM/QR/DCM) to enable high efficiency across wide power range and <30mW standby power consumption. In addition, UCG28836 includes a full list of protections such as brownin and brownout protection, SCP, OVP, OPP, LPS, OFB and OTP. The cycle-by-cycle current limit allows for fast response to the fault conditions to safeguard the system and improve the reliability. In a small 5mm × 5mm package, the UCG28836 has dedicated configuration pins to offer more flexibility. Only resistors are needed to tune certain parameters for each system, enabling a platform design with a single device.

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顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 UCG2883x Self-Biased High Frequency QR Flyback Converter With Integrated GaN 数据表 PDF | HTML 2026年 3月 6日
应用手册 使用 UCG2882x 系列器件设计固定输出电压反激式电路 PDF | HTML 英语版 PDF | HTML 2025年 9月 19日
证书 UCG28828EVM-094 EU Declaration of Conformity (DoC) 2025年 8月 20日

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VQFN (REZ) 12 Ultra Librarian

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包含信息:
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  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
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  • 制造厂地点
  • 封装厂地点

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