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UCC57132-Q1

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具有正 OC 保护和 12V UVLO 的汽车级单通道 30V VDD、3A/3A 低侧驱动器

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UCC57132-Q1

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产品详情

Number of channels 1 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 3 Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 26 Features Short circuit protection, Soft turn-off, Split output Operating temperature range (°C) -40 to 125 Rise time (ns) 8 Fall time (ns) 14 Channel input logic Non-Inverting Rating Automotive Undervoltage lockout (typ) (V) 12 Driver configuration Single
Number of channels 1 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 3 Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 26 Features Short circuit protection, Soft turn-off, Split output Operating temperature range (°C) -40 to 125 Rise time (ns) 8 Fall time (ns) 14 Channel input logic Non-Inverting Rating Automotive Undervoltage lockout (typ) (V) 12 Driver configuration Single
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified
    • Device Temperature Grade 1
  • Typical 3A sink 3A source output currents
  • 500mV over-current protection (OCP) threshold
  • Single pin for fault output and enable
  • Programmable fault clear time and over current detection response time
  • Absolute maximum VDD voltage: 30V
  • Tight UVLO threshold for bias flexibility
  • Typical 26ns propagation delay
  • Self-protect driver with thermal shutdown function at 180°C
  • Available in 5mm x 4mm SOIC-8 package
  • Operating junction temperature range of –40°C to 150°C
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified
    • Device Temperature Grade 1
  • Typical 3A sink 3A source output currents
  • 500mV over-current protection (OCP) threshold
  • Single pin for fault output and enable
  • Programmable fault clear time and over current detection response time
  • Absolute maximum VDD voltage: 30V
  • Tight UVLO threshold for bias flexibility
  • Typical 26ns propagation delay
  • Self-protect driver with thermal shutdown function at 180°C
  • Available in 5mm x 4mm SOIC-8 package
  • Operating junction temperature range of –40°C to 150°C

The UCC5713x-Q1 is a single channel, high-performance, low-side gate driver capable of effectively driving MOSFET, IGBT and SiC power switches. The UCC5713x-Q1 has a typical peak drive strength of 3A.

The UCC5713x-Q1 provide the over current protection with the OCP pin. When the over current signal detected on the OCP pin, the internal circuit will pull down the EN/FLT pin to report fault and force the OUT to low stage. Externall pull up circuir on the EN/FLT is required during the normal operation of the driver. Pulling the EN/FLT low will disable the driver. The EN/FLT would also report the under voltage lock out (UVLO) fault on VDD and the over temperature fault. The UCC5713x-Q1 provide both 8V and 12V UVLO option for SiC and IGBT applications.

The UCC5713x-Q1 is a single channel, high-performance, low-side gate driver capable of effectively driving MOSFET, IGBT and SiC power switches. The UCC5713x-Q1 has a typical peak drive strength of 3A.

The UCC5713x-Q1 provide the over current protection with the OCP pin. When the over current signal detected on the OCP pin, the internal circuit will pull down the EN/FLT pin to report fault and force the OUT to low stage. Externall pull up circuir on the EN/FLT is required during the normal operation of the driver. Pulling the EN/FLT low will disable the driver. The EN/FLT would also report the under voltage lock out (UVLO) fault on VDD and the over temperature fault. The UCC5713x-Q1 provide both 8V and 12V UVLO option for SiC and IGBT applications.
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顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 UCC5713x-Q1 High-Speed, Low-Side Gate Drivers With Overcurrent Protection for Automotive Applications 数据表 PDF | HTML 2025-8-15
应用简报 提高栅极驱动器性能：米勒钳位与双极输出的对比 PDF | HTML 英语版 PDF | HTML 2025-12-2
应用手册 使用非隔离式栅极驱动器驱动 SiC MOSFET PDF | HTML 英语版 PDF | HTML 2025-10-23
产品概述 UCC571xx：TI 的首批保护型低侧保护驱动器，配备 DESAT (UCC5710x)、OCP (UCC5714x) (Rev. A) PDF | HTML 英语版 (Rev.A) PDF | HTML 2025-10-1

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