主页 电源管理 栅极驱动器 隔离式栅极驱动器

UCC21351-Q1

正在供货

Automotive,, 4A/6A dual-channel basic isolated gate driver with enable, programmable deadtime

产品详情

Number of channels 2 Isolation rating Basic Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 3000 Working isolation voltage (VIOWM) (Vrms) 850 Transient isolation voltage (VIOTM) (VPK) 7070 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Enable, High CMTI, Programmable dead time Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 150 Rating Automotive Fall time (ns) 8 Undervoltage lockout (typ) (V) 12, 17 TI functional safety category Functional Safety-Capable
Number of channels 2 Isolation rating Basic Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 3000 Working isolation voltage (VIOWM) (Vrms) 850 Transient isolation voltage (VIOTM) (VPK) 7070 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Enable, High CMTI, Programmable dead time Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 150 Rating Automotive Fall time (ns) 8 Undervoltage lockout (typ) (V) 12, 17 TI functional safety category Functional Safety-Capable
SOIC (DWK) 14 106.09 mm² (10.3 mm × 10.3 mm)
  • Universal: dual low-side, dual high-side or half-bridge driver
  • AEC-Q100 qualified with the following result
    • Device temperature grade 1
  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 12V and 17V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast enable for power sequencing
  • Universal: dual low-side, dual high-side or half-bridge driver
  • AEC-Q100 qualified with the following result
    • Device temperature grade 1
  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 12V and 17V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast enable for power sequencing

The UCC21351-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, and IGBT transistors.

The UCC21351-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 3kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21351-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21351-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, and IGBT transistors.

The UCC21351-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 3kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21351-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

下载 观看带字幕的视频 视频

技术文档

未找到结果。请清除搜索并重试。
查看全部 1
顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 UCC21351x-Q1 Automotive 4A, 6A, Basic Isolation Dual-Channel Gate Driver 数据表 PDF | HTML 2025-7-11

设计与开发

如需其他信息或资源,请点击以下任一标题进入详情页面查看(如有)。

评估板

UCC21551CQEVM-079 — UCC21551 4A、6A 双通道隔离式栅极驱动器评估模块

UCC21551CQEVM 是包含多个测试点和跳线的双层覆铜 PCB,用于全面评估 UCC21551 的功能。该 EVM 具有 PWM 输入控制、板载可调电源、分立式 FET 插座、用于低侧保护的外部有源钳位、自举高侧、负栅极电压功能、可配置死区时间开关、EN/DIS 跳线以及用于 Wolfspeed XM3 SiC 半桥电源模块的插座。经过优化的布局可最大限度地减小每个通道的环路面积,旁路电容器的放置可实现干净清晰的信号读取和最小的噪声干扰。 

用户指南: PDF | HTML
支持的产品和硬件
有库存
限制:
??asset.out-of-stock-ti_zh_CN??
无货
封装 引脚 CAD 符号、封装和 3D 模型
SOIC (DWK) 14 Ultra Librarian

订购和质量

推荐产品可能包含与 TI 此产品相关的参数、评估模块或参考设计。

支持和培训

视频