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UC3707

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具有 40V VDD、40ns 下降时间和输出锁存器的 1.5A/1.5A 双路栅极驱动器

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UC3707

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产品详情

Number of channels 2 Power switch IGBT, MOSFET Peak output current (A) 1.5 Input supply voltage (min) (V) 5 Input supply voltage (max) (V) 40 Features Analog Shutdown with Optional Latch, Thermal shutdown Operating temperature range (°C) 0 to 70 Rise time (ns) 40 Fall time (ns) 40 Propagation delay time (µs) 0.1 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Driver configuration Dual
Number of channels 2 Power switch IGBT, MOSFET Peak output current (A) 1.5 Input supply voltage (min) (V) 5 Input supply voltage (max) (V) 40 Features Analog Shutdown with Optional Latch, Thermal shutdown Operating temperature range (°C) 0 to 70 Rise time (ns) 40 Fall time (ns) 40 Propagation delay time (µs) 0.1 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Driver configuration Dual
PDIP (N) 16 181.42 mm² 19.3 x 9.4 SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • Two independent Drivers
  • 1.5A Totem Pole Outputs
  • Inverting and Non-Inverting Inputs
  • 40 ns Rise and Fall into 1000 pF
  • High-Speed, Power MOSFET Compatible
  • Low Cross-Conduction Current Spike
  • Analog Shutdown with Optional Latch
  • Low Quiescent Current
  • 5 V to 40 V Operation
  • Thermal Shutdown Protection
  • 16-Pin Dual-In-Line Package
  • 20-Pin PLCC and CLCC Package
  • Two independent Drivers
  • 1.5A Totem Pole Outputs
  • Inverting and Non-Inverting Inputs
  • 40 ns Rise and Fall into 1000 pF
  • High-Speed, Power MOSFET Compatible
  • Low Cross-Conduction Current Spike
  • Analog Shutdown with Optional Latch
  • Low Quiescent Current
  • 5 V to 40 V Operation
  • Thermal Shutdown Protection
  • 16-Pin Dual-In-Line Package
  • 20-Pin PLCC and CLCC Package

The UC1707 family of power drivers is made with a high-speed Schottky process to interface between low-level control functions and high-power switching devices - particularly power MOSFETs. These devices contain two independent channels, each of which can be activated by either a high or low input logic level signal. Each output can source or sink up to 1.5 A as long as power dissipation limits are not exceeded.

Although each output can be activated independently with its own inputs, it can be forced low in common through the action either of a digital high signal at the Shutdown terminal or a differential low-level analog signal. The Shutdown command from either source can either be latching or not, depending on the status of the Latch Disable pin.

Supply voltage for both VIN and VC can independently range from 5 V to 40 V.

These devices are available in two-watt plastic "bat-wing" DIP for operation over a 0°C to 70°C temperature range and, with reduced power, in a hermetically sealed cerdip for –55°C to +125°C operation. Also available in surface mount DW, Q, L packages.

The UC1707 family of power drivers is made with a high-speed Schottky process to interface between low-level control functions and high-power switching devices - particularly power MOSFETs. These devices contain two independent channels, each of which can be activated by either a high or low input logic level signal. Each output can source or sink up to 1.5 A as long as power dissipation limits are not exceeded.

Although each output can be activated independently with its own inputs, it can be forced low in common through the action either of a digital high signal at the Shutdown terminal or a differential low-level analog signal. The Shutdown command from either source can either be latching or not, depending on the status of the Latch Disable pin.

Supply voltage for both VIN and VC can independently range from 5 V to 40 V.

These devices are available in two-watt plastic "bat-wing" DIP for operation over a 0°C to 70°C temperature range and, with reduced power, in a hermetically sealed cerdip for –55°C to +125°C operation. Also available in surface mount DW, Q, L packages.
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类型 标题 下载最新的英语版本 日期
* 数据表 Dual Channel Power Driver 数据表 (Rev. B) 2008年 9月 16日
更多文献资料 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
更多文献资料 MOSFET 和 IGBT 栅极驱动器电路的基本原理 最新英语版本 (Rev.A) 2018年 4月 17日
应用手册 U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics 1999年 9月 5日
应用手册 U-137 Practical Considerations in High Performance MOSFET, IGBT and MCT Gate 1999年 9月 5日

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PDIP (N) 16 查看选项
SOIC (DW) 16 查看选项
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  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
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