TPS54116-Q1
- AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
- Device HBM ESD Classification Level 2
- Device CDM ESD Classification Level C6
- Single-chip DDR2, DDR3 and DDR3L Memory Power Solution
- 4-A Synchronous Buck Converter
- Integrated 33-mΩ High-side and 25-mΩ Low-side MOSFETs
- Fixed Frequency Current-mode Control
- Adjustable Frequency from 100 kHz to 2.5 MHz
- Synchronizable to an External Clock
- 0.6-V ±1% Voltage Reference Over Temperature
- Adjustable Cycle-by-Cycle Peak Current Limit
- Monotonic Start-up Into Pre-biased Outputs
- 1-A Source/Sink Termination LDO with ±20-mV DC Accuracy
- Stable with 2 × 10-µF MLCC Capacitor
- 10-mA Source/Sink Buffered Reference Output Regulated to Within 49% to 51% of VDDQ
- Independent Enable Pins with Adjustable UVLO and Hysteresis
- Thermal Shutdown
- –40°C to 150°C Operating TJ
- 24-pin, 4-mm × 4-mm WQFN Package
The TPS54116-Q1 device is a full featured 6-V, 4-A, synchronous step down converter with two integrated MOSFETs and 1-A sink/source double data rate (DDR) VTT termination regulator with VTTREF buffered reference output.
The TPS54116-Q1 buck regulator minimizes solution size by integrating the MOSFETs and reducing inductor size with up to 2.5-MHz switching frequency. The switching frequency can be set above the medium wave radio band for noise sensitive applications and is synchronizable to an external clock. Synchronous rectification keeps the frequency fixed across the entire output load range. Efficiency is maximized through integrated 25-mΩ low-side and 33-mΩ high-side MOSFETs. Cycle-by-cycle peak current limit protects the device during an overcurrent condition and is adjustable with a resistor at the ILIM pin to optimize for smaller inductors.
The VTT termination regulator maintains fast transient response with only 2 × 10-µF ceramic output capacitance reducing external component count. The TPS54116-Q1 uses remote sensing of VTT for best regulation.
Using the enable pins to enter a shutdown mode reduces supply current to 1-µA. Under voltage lockout thresholds can be set with a resistor network on either enable pin. The VTT and VTTREF outputs are discharged when disabled with ENLDO.
Full integration minimizes the IC footprint with a small 4 mm × 4 mm thermally enhanced WQFN package.
技术文档
| 顶层文档 | 类型 | 标题 | 格式选项 | 下载最新的英语版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 数据表 | TPS54116-Q1 2.95-V to 6-V Input, 4-A Step-Down Converter and 1-A Source/Sink DDR Termination Regulator 数据表 (Rev. B) | PDF | HTML | 2016-10-17 | ||
| 用户指南 | Single LP8733-Q1 User's Guide to Power DRA78x and TDA3 (Rev. A) | PDF | HTML | 2021-3-31 | |||
| 应用手册 | DDR VTT Power Solutions: A Competitive Analysis (Rev. A) | 2020-7-9 | ||||
| 技术文章 | Improving DDR Memory Performance in Automotive Applications | PDF | HTML | 2017-6-22 | |||
| 技术文章 | Four design tips to obtain 2MHz switching frequency | PDF | HTML | 2016-10-3 |
设计与开发
如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。
TPS54116-Q1EVM-830 — TPS54116-Q1 汽车 DDR 电源解决方案评估模块
此评估模块旨在演示使用 TPS54116-Q1 稳压器进行设计时，可实现减小印刷电路板面积。外部分压器能实现可调节的输出电压。TPS54116-Q1 直流/直流转换器是一款同步降压转换器，旨在为 DDR 存储器终端提供高达 4A 的输出和集成的 1A 拉电流/灌电流 LDO。
TIDA-00530 — 面向基于低功耗 TDA3x 的系统的汽车电源参考设计
此解决方案旨在为使用 TDA3x SoC（无需汽车电池输入）的 ADAS 应用制作尺寸经优化的集成电源设计。 通过仅面向处理需求较低的应用，我们可以选择比采用更高性能处理器的系统更小的器件和元件。
| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| WQFN (RTW) | 24 | Ultra Librarian |
订购和质量
推荐产品可能包含与 TI 此产品相关的参数、评估模块或参考设计。