TPS1101
- Low rDS(on) . . . 0.09 Typ at VGS = -10 V
- 3 V Compatible
- Requires No External VCC
- TTL and CMOS Compatible Inputs
- VGS(th) = -1.5 V Max
- Available in Ultrathin TSSOP Package (PW)
- ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015
The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOSTM
process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1101 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 5.5 ns typical) of the TPS1101 make it the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.
The ultrathin thin shrink small-outline package or TSSOP (PW) version fits in height-restricted places where other P-channel MOSFETs cannot. The size advantage is especially important where board height restrictions do not allow for an small-outline integrated circuit (SOIC) package. Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other P-channel MOSFETs in SOIC packages.
技术文档
类型 | 标题 | 下载最新的英语版本 | 日期 | |||
---|---|---|---|---|---|---|
* | 数据表 | Single P-Channel Enhancement-Mode MOSFETs 数据表 (Rev. C) | 1995年 8月 1日 |
设计和开发
如需其他信息或资源,请点击以下任一标题进入详情页面查看(如有)。
封装 | 引脚 | 下载 |
---|---|---|
SOIC (D) | 8 | 查看选项 |
TSSOP (PW) | 16 | 查看选项 |
订购和质量
- RoHS
- REACH
- 器件标识
- 引脚镀层/焊球材料
- MSL 等级/回流焊峰值温度
- MTBF/时基故障估算
- 材料成分
- 鉴定摘要
- 持续可靠性监测
- 制造厂地点
- 封装厂地点
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