主页 开关与多路复用器 模拟开关和多路复用器
主页
开关与多路复用器
模拟开关和多路复用器

SN74CBTD3306C

正在供货

具有–2V 下冲保护和电平转换功能的 5V、1:1 (SPST)、2 通道总线开关（低电平有效）

立即订购
数据表

SN74CBTD3306C

正在供货
数据表 立即订购

产品详情

Configuration 1:1 SPST Number of channels 2 Power supply voltage - single (V) 5 Protocols Analog Ron (typ) (Ω) 3 CON (typ) (pF) 12.5 Bandwidth (MHz) 20 Operating temperature range (°C) -40 to 85 Features Undershoot protection Input/output continuous current (max) (mA) 128 Rating Catalog
Configuration 1:1 SPST Number of channels 2 Power supply voltage - single (V) 5 Protocols Analog Ron (typ) (Ω) 3 CON (typ) (pF) 12.5 Bandwidth (MHz) 20 Operating temperature range (°C) -40 to 85 Features Undershoot protection Input/output continuous current (max) (mA) 128 Rating Catalog
SOIC (D) 8 29.4 mm² 4.9 x 6 TSSOP (PW) 8 19.2 mm² 3 x 6.4
  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • VCC Operating Range From 4.5 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • VCC Operating Range From 4.5 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBTD3306C is organized as two 1-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE\ is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBTD3306C is organized as two 1-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE\ is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
open-in-new 查找其他 模拟开关和多路复用器
下载 观看带字幕的视频 视频

技术文档

star =有关此产品的 TI 精选热门文档
未找到结果。请清除搜索，并重试。
查看全部 15
类型 项目标题 下载最新的英语版本 日期
* 数据表 SN74CBTD3306C 数据表 (Rev. A) 2003年 10月 15日
更多文献资料 选择正确的德州仪器 (TI) 信号开关 (Rev. E) PDF | HTML 下载英文版本 (Rev.E) PDF | HTML 2022年 8月 5日
更多文献资料 CBT-C、CB3T 和 CB3Q 信号开关系列 (Rev. C) PDF | HTML 下载英文版本 (Rev.C) PDF | HTML 2022年 3月 11日
更多文献资料 多路复用器和信号开关词汇表 (Rev. B) 下载英文版本 (Rev.B) PDF | HTML 2022年 3月 11日
更多文献资料 利用关断保护信号开关消除电源时序 (Rev. C) 下载英文版本 (Rev.C) PDF | HTML 2021年 10月 21日
选择指南 Little Logic Guide 2014 (Rev. G) 2018年 7月 6日
选择指南 Logic Guide (Rev. AB) 2017年 6月 12日
更多文献资料 Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
选择指南 逻辑器件指南 2014 (Rev. AA) 下载最新的英文版本 (Rev.AB) 2014年 11月 17日
选择指南 小尺寸逻辑器件指南 (Rev. E) 下载最新的英文版本 (Rev.G) 2012年 7月 16日
用户指南 LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
更多文献资料 Digital Bus Switch Selection Guide (Rev. A) 2004年 11月 10日
更多文献资料 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
用户指南 Signal Switch Data Book (Rev. A) 2003年 11月 14日
更多文献资料 Bus FET Switch Solutions for Live Insertion Applications 2003年 2月 7日

设计和开发

如需其他信息或资源，请查看下方列表，点击标题即可进入详情页面。

评估板

DIP-ADAPTER-EVM — DIP 适配器评估模块

借助 DIP-Adapter-EVM 加快运算放大器的原型设计和测试，该 EVM 有助于快速轻松地连接小型表面贴装 IC 并且价格低廉。您可以使用随附的 Samtec 端子板连接任何受支持的运算放大器，或者将这些端子板直接连接至现有电路。

DIP-Adapter-EVM 套件支持六种常用的业界通用封装，包括：

  • D 和 U (SOIC-8)
  • PW (TSSOP-8)
  • DGK（MSOP-8、VSSOP-8）
  • DBV（SOT23-6、SOT23-5 和 SOT23-3）
  • DCK（SC70-6 和 SC70-5）
  • DRL (SOT563-6)
用户指南: PDF
TI.com 上无现货
接口适配器

LEADED-ADAPTER1 — 用于快速测试 TI 5、8、10、16 和 24 引脚引线式封装的表面贴装转 DIP 接头适配器

EVM-LEADED1 板可对 TI 的常见引线式封装进行快速测试和电路板试验。该评估板具有足够的空间，可将 TI 的 D、DBQ、DCT、DCU、DDF、DGS、DGV 和 PW 表面贴装封装转换为 100mil DIP 接头。     

用户指南: PDF
TI.com 上无现货
仿真模型

HSPICE MODEL OF SN74CBTD3306C

SCEJ240.ZIP (94 KB) - HSpice Model
下载
仿真模型

SN74CBTD3306C IBIS Model

SCDM039.ZIP (14 KB) - IBIS Model
下载
封装 引脚数 下载
SOIC (D) 8 了解详情
TSSOP (PW) 8 了解详情

订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 认证摘要
  • 持续可靠性监测

推荐产品可能包含与 TI 此产品相关的参数、评估模块或参考设计。

支持与培训

视频