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SN74CBT6800C

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具有 –2V 下冲保护的 5V、1:1 (SPST)、10 通道通用 FET 总线开关

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SN74CBT6800C

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产品详情

Configuration 1:1 SPST Number of channels 10 Power supply voltage - single (V) 5 Protocols Analog Ron (typ) (Ω) 3 CON (typ) (pF) 13.5 ON-state leakage current (max) (µA) 10 Bandwidth (MHz) 200 Operating temperature range (°C) -40 to 85 Features Undershoot protection Input/output continuous current (max) (mA) 128 Rating Catalog
Configuration 1:1 SPST Number of channels 10 Power supply voltage - single (V) 5 Protocols Analog Ron (typ) (Ω) 3 CON (typ) (pF) 13.5 ON-state leakage current (max) (µA) 10 Bandwidth (MHz) 200 Operating temperature range (°C) -40 to 85 Features Undershoot protection Input/output continuous current (max) (mA) 128 Rating Catalog
SOIC (DW) 24 159.65 mm² 15.5 x 10.3 TSSOP (PW) 24 49.92 mm² 7.8 x 6.4 TVSOP (DGV) 24 32 mm² 5 x 6.4
  • Member of the Texas Instruments Widebus™ Family
  • Undershoot Protection for Off-Isolation on A and B Ports Up to .2 V
  • B-Port Outputs Are Precharged by Bias Voltage (BIASV) to Minimize Signal Distortion During Live Insertion and Hot-Plugging
  • Supports PCI Hot Plug
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 3 µA Max)
  • VCC Operating Range From 4 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: PCI Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Widebus is a trademark of Texas Instruments.
  • Member of the Texas Instruments Widebus™ Family
  • Undershoot Protection for Off-Isolation on A and B Ports Up to .2 V
  • B-Port Outputs Are Precharged by Bias Voltage (BIASV) to Minimize Signal Distortion During Live Insertion and Hot-Plugging
  • Supports PCI Hot Plug
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 3 µA Max)
  • VCC Operating Range From 4 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: PCI Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Widebus is a trademark of Texas Instruments.

The SN74CBT6800C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT6800C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The device also precharges the B port to a user-selectable bias voltage (BIASV) to minimize live-insertion noise.

The SN74CBT6800C is a 10-bit bus switch with a single output-enable (ON\) input. When ON\ is low, the 10-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When ON\ is high, the 10-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. The B port is precharged to BIASV through the equivalent of a 10-k resistor when ON\ is high, or if the device is powered down (VCC = 0 V).

During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, ON\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBT6800C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT6800C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The device also precharges the B port to a user-selectable bias voltage (BIASV) to minimize live-insertion noise.

The SN74CBT6800C is a 10-bit bus switch with a single output-enable (ON\) input. When ON\ is low, the 10-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When ON\ is high, the 10-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. The B port is precharged to BIASV through the equivalent of a 10-k resistor when ON\ is high, or if the device is powered down (VCC = 0 V).

During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, ON\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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类型 项目标题 下载最新的英语版本 日期
* 数据表 SN74CBT6800C 数据表 2003年 10月 6日
更多文献资料 选择正确的德州仪器 (TI) 信号开关 (Rev. E) PDF | HTML 下载英文版本 (Rev.E) PDF | HTML 2022年 8月 5日
更多文献资料 CBT-C、CB3T 和 CB3Q 信号开关系列 (Rev. C) PDF | HTML 下载英文版本 (Rev.C) PDF | HTML 2022年 3月 11日
更多文献资料 多路复用器和信号开关词汇表 (Rev. B) 下载英文版本 (Rev.B) PDF | HTML 2022年 3月 11日
更多文献资料 利用关断保护信号开关消除电源时序 (Rev. C) 下载英文版本 (Rev.C) PDF | HTML 2021年 10月 21日
选择指南 Little Logic Guide 2014 (Rev. G) 2018年 7月 6日
选择指南 Logic Guide (Rev. AB) 2017年 6月 12日
更多文献资料 Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
选择指南 逻辑器件指南 2014 (Rev. AA) 下载最新的英文版本 (Rev.AB) 2014年 11月 17日
选择指南 小尺寸逻辑器件指南 (Rev. E) 下载最新的英文版本 (Rev.G) 2012年 7月 16日
用户指南 LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
更多文献资料 Digital Bus Switch Selection Guide (Rev. A) 2004年 11月 10日
更多文献资料 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
用户指南 Signal Switch Data Book (Rev. A) 2003年 11月 14日
更多文献资料 Bus FET Switch Solutions for Live Insertion Applications 2003年 2月 7日

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用户指南: PDF
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封装 引脚数 下载
SOIC (DW) 24 了解详情
TSSOP (PW) 24 了解详情
TVSOP (DGV) 24 了解详情

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  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
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