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LMG1020-Q1

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具有 5V UVLO、可提供纳秒级输入脉冲的汽车级 7A 和 5A 单通道栅极驱动器

产品详情

Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features low-side, ultra-fast Operating temperature range (°C) -40 to 125 Rise time (ns) 0.4 Fall time (ns) 0.4 Propagation delay time (µs) 0.0025 Input threshold TTL Channel input logic Inverting, Non-inverting Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 3.5 Driver configuration Low Side
Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features low-side, ultra-fast Operating temperature range (°C) -40 to 125 Rise time (ns) 0.4 Fall time (ns) 0.4 Propagation delay time (µs) 0.0025 Input threshold TTL Channel input logic Inverting, Non-inverting Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 3.5 Driver configuration Low Side
DSBGA (YBV) 6 1.1049 mm² 0.87 x 1.27
  • Qualified for automotive applications
  • AEC-Q100 qualified
    • Device temperature grade 1
  • Low-side, ultra-fast gate driver for GaN and silicon FETs
  • 1ns minimum input pulse width
  • Up to 60MHz operation
  • 2.5ns typical, 4.5ns maximum propagation delay
  • 400ps typical rise and fall time
  • 7A peak source and 5A peak sink currents
  • 5V supply voltage
  • UVLO and overtemperature protection
  • 0.8mm × 1.2mm WCSP package
  • Qualified for automotive applications
  • AEC-Q100 qualified
    • Device temperature grade 1
  • Low-side, ultra-fast gate driver for GaN and silicon FETs
  • 1ns minimum input pulse width
  • Up to 60MHz operation
  • 2.5ns typical, 4.5ns maximum propagation delay
  • 400ps typical rise and fall time
  • 7A peak source and 5A peak sink currents
  • 5V supply voltage
  • UVLO and overtemperature protection
  • 0.8mm × 1.2mm WCSP package

The LMG1020-Q1 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low-side. The design simplicity of the LMG1020-Q1 enables extremely fast propagation delays of 2.5 ns and minimum pulse width of 1ns. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.

The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.

The 0.8mm × 1.2mm WCSP package of the LMG1020-Q1 minimizes gate loop inductance and maximizes power density in high-frequency applications.

The LMG1020-Q1 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low-side. The design simplicity of the LMG1020-Q1 enables extremely fast propagation delays of 2.5 ns and minimum pulse width of 1ns. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.

The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.

The 0.8mm × 1.2mm WCSP package of the LMG1020-Q1 minimizes gate loop inductance and maximizes power density in high-frequency applications.

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* 数据表 LMG1020-Q1 5V, 7A, 5A Low-Side GaN and MOSFET Driver For 1ns Pulse Width Automotive Applications 数据表 PDF | HTML 2025年 4月 29日

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评估板

LMG1020EVM-006 — LMG1020 GaN 低侧驱动器和 GaN FET 激光雷达评估模块

LMG1020EVM-006 是小型易用功率级,适用于激光雷达激光驱动。EVM 包括集成电阻负载(不包括激光)并接受短脉冲输入,可以进行缓冲(并进一步缩短)或直接传递到功率级。该板可展示适用于高分辨率激光雷达和 ToF 系统的纳秒级激光脉冲。
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DSBGA (YBV) 6 Ultra Librarian

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