INA116 不推荐用于新设计
该产品会持续为现有客户提供。新设计应考虑替代产品。
open-in-new 比较替代产品
功能与比较器件相似。
INA819 正在供货 具有 ±60V 过压保护功能(增益引脚 2、3)的低功耗 (350µA)、精密仪表放大器 INA121 has lower offset and higher CMRR, with half the power consumption
INA121 正在供货 FET 输入低功耗仪表放大器 INA121 has lower offset and higher CMRR, with half the power consumption

产品详情

Number of channels 1 Vs (max) (V) 36 Vs (min) (V) 9 Input offset (±) (max) (µV) 2000 Voltage gain (min) (V/V) 1 Voltage gain (max) (V/V) 1000 Noise at 1 kHz (typ) (nV√Hz) 28 CMRR (min) (dB) 86 Input offset drift (±) (max) (µV/°C) 5 Input bias current (±) (max) (nA) 0.000025 Iq (typ) (mA) 1 Bandwidth at min gain (typ) (MHz) 0.8 Gain error (±) (max) (%) 0.7 Operating temperature range (°C) -40 to 85 Rating Catalog Type Resistor Gain nonlinearity (±) (max) (%) 0.005 Output swing headroom (to negative supply) (typ) (V) 0.2 Output swing headroom (to positive supply) (typ) (V) -0.7 Input common mode headroom (to negative supply) (typ) (V) 2.4 Input common mode headroom (to positive supply) (typ) (V) -2 Noise at 0.1 Hz to 10 Hz (typ) (µVPP) 2
Number of channels 1 Vs (max) (V) 36 Vs (min) (V) 9 Input offset (±) (max) (µV) 2000 Voltage gain (min) (V/V) 1 Voltage gain (max) (V/V) 1000 Noise at 1 kHz (typ) (nV√Hz) 28 CMRR (min) (dB) 86 Input offset drift (±) (max) (µV/°C) 5 Input bias current (±) (max) (nA) 0.000025 Iq (typ) (mA) 1 Bandwidth at min gain (typ) (MHz) 0.8 Gain error (±) (max) (%) 0.7 Operating temperature range (°C) -40 to 85 Rating Catalog Type Resistor Gain nonlinearity (±) (max) (%) 0.005 Output swing headroom (to negative supply) (typ) (V) 0.2 Output swing headroom (to positive supply) (typ) (V) -0.7 Input common mode headroom (to negative supply) (typ) (V) 2.4 Input common mode headroom (to positive supply) (typ) (V) -2 Noise at 0.1 Hz to 10 Hz (typ) (µVPP) 2
SOIC (DW) 16 106.09 mm² (10.3 mm × 10.3 mm) PDIP (N) 16 181.42 mm² (19.3 mm × 9.4 mm)
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* 数据表 Ultra Low Input Bias Current Instrumentation Amplifier 数据表 2000-9-27

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