DRV8762-Q1
- AEC-Q100 Test Guidance for automotive applications
- Device ambient temperature: –40°C to +125°C
- H-bridge gate driver
- Drives four N-channel MOSFETs (NMOS)
- 8 to 85V wide operating voltage range
- Bootstrap architecture for high-side gate driver
- Supports 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
- Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
- Smart Gate Drive architecture
- 8-level configurable peak gate drive current up to 224 / 448mA (source / sink)
- Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
- Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
- Low-side Current Sense Amplifier
- 1mV low input offset across temperature
- 4-level adjustable gain
- Adjustable output bias to support unidirectional or bidirectional sensing
- SPI-based detailed configuration and diagnostics
- DRVOFF pin to disable driver independently
- High voltage wake up pin (nSLEEP)
- Dedicated ASCIN pin to control motor braking (active short circuit)
- 4x and 2x PWM Modes
- Supports 3.3V and 5V Logic Inputs
- Protection features
- Battery and power supply voltage monitors
- MOSFET VDS and Rsense over current monitors
- MOSFET VGS gate fault monitors
- Device thermal warning and shutdown
- Fault condition indicator pin
The DRV8762-Q1 is an integrated smart gate driver for 48V automotive H-bridge applications. The device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8762-Q1 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. The Smart Gate Drive architecture supports configurable peak gate drive current from 16mA up to 224mA source and 448mA sink. The DRV8762-Q1 can operate with a wide input range from 8V to 85V at the motor connection. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage of external switches.
The DRV8762-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurements.
A wide range of diagnostics and protection features are integrated with the DRV8762-Q1 enables a robust motor drive system design and helps eliminate the need of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.
技术文档
| 顶层文档 | 类型 | 标题 | 格式选项 | 下载最新的英语版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 数据表 | DRV8762-Q1 48V Battery H-Bridge Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring 数据表 | PDF | HTML | 2026年 5月 14日 | ||
| EVM 用户指南 | DRV8762-Q1 评估模块 | PDF | HTML | 2026年 5月 4日 | |||
| 应用手册 | 所选封装材料的热学和电学性质 | 2008年 10月 16日 |
设计与开发
如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。
DRV8762-Q1EVM — DRV8762-Q1 评估模块
DRV8762-Q1 是一款集成式智能栅极驱动器，适用于 48V 汽车类 H 桥有刷直流 (BDC) 应用。该器件提供低侧电流检测放大器，用于支持基于电阻器的低侧电流检测。放大器的低失调电压使系统能够实现精密的电机电流测量。
栅极驱动器支持外部 N 沟道高侧和低侧功率 MOSFET，可驱动高达 224mA 的峰值拉电流和 448mA 的峰值灌电流。自举电容器为高侧栅极驱动器生成电源电压。低侧栅极驱动器的电源电压由外部提供，标称值为 12V。
此套件需要使用 C2000™ launchpad (LAUNCHXL-F280049C) 控制 DRV8762-Q1，并监控和报告故障。
| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| VQFN (RGZ) | 48 | Ultra Librarian |
订购和质量
- RoHS
- REACH
- 器件标识
- 引脚镀层/焊球材料
- MSL 等级/回流焊峰值温度
- MTBF/时基故障估算
- 材料成分
- 鉴定摘要
- 持续可靠性监测
- 制造厂地点
- 封装厂地点
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