BUF12840
- 10-BIT RESOLUTION
- 12-CHANNEL P-GAMMA
- READS FROM EXTERNAL EEPROM
- TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS
- RAIL-TO-RAIL OUTPUT:
- 300mV Min Swing-to-Rail (10mA)
- 200mV Min Swing-to-Rail (5mA)
- LOW SUPPLY CURRENT
- SUPPLY VOLTAGE: 9V to 20V
- DIGITAL SUPPLY: 2V to 5.5V
- TWO-WIRE INTERFACE: Supports 400kHz and 3.4MHz Operation
- APPLICATIONS
- TFT-LCD REFERENCE DRIVERS
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The BUF12840 offers 12 programmable gamma channels with external electrically erasable programmable read-only memory (EEPROM) read capabilities.
The BUF12840 has two separate memory banks that allow simultaneous storage of two different gamma curves to facilitate switching between gamma curves.
All gamma channels offer a rail-to-rail output that typically swings to within 200mV of either supply rail with a 5mA load. All channels are programmed using a two-wire interface that supports standard operations up to 400kHz and high-speed data transfers up to 3.4MHz.
The BUF12840 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF12840 is offered in a QFN-24 package, and is specified from –40°C to +95°C.
技术文档
| 顶层文档 | 类型 | 标题 | 格式选项 | 下载最新的英语版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 数据表 | Prog Gamma-Voltage Generator w/ Integrated 2-Bank Memory & External EEPROM 数据表 (Rev. A) | 2011-7-12 | |||
| 应用手册 | Driving Capacitive Loads with Gamma Buffers | 2012-11-20 |
设计与开发
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SBOC431 — BUF12840EVM User Software
| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| VQFN (RGE) | 24 | Ultra Librarian |